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K4S643233H

Mobile-SDRAM

GENERALDESCRIPTION TheK4S643233His67,108,864bitssynchronoushighdatarateDynamicRAMorganizedas4x524,288wordsby32bits,fabricatedwithSAMSUNG’shighperformanceCMOStechnology.SynchronousdesignallowsprecisecyclecontrolwiththeuseofsystemclockandI/Otransactionsare

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K4S643233H-C

Mobile-SDRAM

GENERALDESCRIPTION TheK4S643233His67,108,864bitssynchronoushighdatarateDynamicRAMorganizedas4x524,288wordsby32bits,fabricatedwithSAMSUNG’shighperformanceCMOStechnology.SynchronousdesignallowsprecisecyclecontrolwiththeuseofsystemclockandI/Otransactionsare

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K4S643233H-F

Mobile-SDRAM

GENERALDESCRIPTION TheK4S643233His67,108,864bitssynchronoushighdatarateDynamicRAMorganizedas4x524,288wordsby32bits,fabricatedwithSAMSUNG’shighperformanceCMOStechnology.SynchronousdesignallowsprecisecyclecontrolwiththeuseofsystemclockandI/Otransactionsare

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K4S643233H-F1H

Mobile-SDRAM

GENERALDESCRIPTION TheK4S643233His67,108,864bitssynchronoushighdatarateDynamicRAMorganizedas4x524,288wordsby32bits,fabricatedwithSAMSUNG’shighperformanceCMOStechnology.SynchronousdesignallowsprecisecyclecontrolwiththeuseofsystemclockandI/Otransactionsare

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K4S643233H-F1L

Mobile-SDRAM

GENERALDESCRIPTION TheK4S643233His67,108,864bitssynchronoushighdatarateDynamicRAMorganizedas4x524,288wordsby32bits,fabricatedwithSAMSUNG’shighperformanceCMOStechnology.SynchronousdesignallowsprecisecyclecontrolwiththeuseofsystemclockandI/Otransactionsare

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K4S643233H-FE

Mobile-SDRAM

GENERALDESCRIPTION TheK4S643233His67,108,864bitssynchronoushighdatarateDynamicRAMorganizedas4x524,288wordsby32bits,fabricatedwithSAMSUNG’shighperformanceCMOStechnology.SynchronousdesignallowsprecisecyclecontrolwiththeuseofsystemclockandI/Otransactionsare

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K4S643233H-FHE

Mobile-SDRAM

GENERALDESCRIPTION TheK4S643233His67,108,864bitssynchronoushighdatarateDynamicRAMorganizedas4x524,288wordsby32bits,fabricatedwithSAMSUNG’shighperformanceCMOStechnology.SynchronousdesignallowsprecisecyclecontrolwiththeuseofsystemclockandI/Otransactionsare

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K4S643233H-G

Mobile-SDRAM

GENERALDESCRIPTION TheK4S643233His67,108,864bitssynchronoushighdatarateDynamicRAMorganizedas4x524,288wordsby32bits,fabricatedwithSAMSUNG’shighperformanceCMOStechnology.SynchronousdesignallowsprecisecyclecontrolwiththeuseofsystemclockandI/Otransactionsare

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K4S643233H-L

Mobile-SDRAM

GENERALDESCRIPTION TheK4S643233His67,108,864bitssynchronoushighdatarateDynamicRAMorganizedas4x524,288wordsby32bits,fabricatedwithSAMSUNG’shighperformanceCMOStechnology.SynchronousdesignallowsprecisecyclecontrolwiththeuseofsystemclockandI/Otransactionsare

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K4S643233H-N

Mobile-SDRAM

GENERALDESCRIPTION TheK4S643233His67,108,864bitssynchronoushighdatarateDynamicRAMorganizedas4x524,288wordsby32bits,fabricatedwithSAMSUNG’shighperformanceCMOStechnology.SynchronousdesignallowsprecisecyclecontrolwiththeuseofsystemclockandI/Otransactionsare

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K4S643233F

2Mx32MobileSDRAM90FBGACMOSSDRAM

GENERALDESCRIPTION TheK4S643233Fis67,108,864bitssynchronoushighdatarateDynamicRAMorganizedas4x524,288wordsby32bits,fabricatedwithSAMSUNG¢shighperformanceCMOStechnology.Synchronousdesignallowsprecisecyclecontrolwiththeuseofsystemclock.I/Otransactionsarep

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K4S643233F-SE/I

2Mx32MobileSDRAM90FBGACMOSSDRAM

GENERALDESCRIPTION TheK4S643233Fis67,108,864bitssynchronoushighdatarateDynamicRAMorganizedas4x524,288wordsby32bits,fabricatedwithSAMSUNG¢shighperformanceCMOStechnology.Synchronousdesignallowsprecisecyclecontrolwiththeuseofsystemclock.I/Otransactionsarep

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K4S643233F-SE/N

2Mx32MobileSDRAM90FBGACMOSSDRAM

GENERALDESCRIPTION TheK4S643233Fis67,108,864bitssynchronoushighdatarateDynamicRAMorganizedas4x524,288wordsby32bits,fabricatedwithSAMSUNG¢shighperformanceCMOStechnology.Synchronousdesignallowsprecisecyclecontrolwiththeuseofsystemclock.I/Otransactionsarep

SamsungSamsung semiconductor

三星三星半導(dǎo)體

詳細(xì)參數(shù)

  • 型號:

    K4S643233H

  • 制造商:

    SAMSUNG

  • 制造商全稱:

    Samsung semiconductor

  • 功能描述:

    Mobile-SDRAM

供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
K存
23+
BGA
2800
絕對全新原裝!現(xiàn)貨!特價(jià)!請放心訂購!
詢價(jià)
SAMSUNG
09+
BGA
5500
原裝無鉛,優(yōu)勢熱賣
詢價(jià)
SAMSUNG
2016+
ROHS
5632
只做進(jìn)口原裝正品!現(xiàn)貨或者訂貨一周貨期!只要要網(wǎng)上有
詢價(jià)
24+
BGA
560
詢價(jià)
SAMSUNG
23+
BGA
1001
全新原裝現(xiàn)貨
詢價(jià)
SAMSUNG
2004+
BGA
24
原裝現(xiàn)貨海量庫存歡迎咨詢
詢價(jià)
SAMSANG
19+
BGA
256800
原廠代理渠道,每一顆芯片都可追溯原廠;
詢價(jià)
22+
BGA
2140
全新原裝!現(xiàn)貨特價(jià)供應(yīng)
詢價(jià)
SAMSUNG
18+
BGA
85600
保證進(jìn)口原裝可開17%增值稅發(fā)票
詢價(jià)
BGA
500
詢價(jià)
更多K4S643233H供應(yīng)商 更新時(shí)間2024-11-17 10:50:00