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K4T1G044QE中文資料三星數(shù)據(jù)手冊(cè)PDF規(guī)格書
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The 1Gb DDR2 SDRAM is organized asa 32Mbit x 4 I/Os x 8banks, 16Mbit x 8 I/Os x 8banks or 8Mbit x 16 I/Os x 8 banks device. This synchronous device achieves high speed double-data-rate transfer rates of up to 800Mb/sec/pin (DDR2-800) for general applications.
Key Features
? JEDEC standard VDD= 1.8V ± 0.1V Power Supply
?VDDQ= 1.8V ± 0.1V
? 333MHz fCKfor 667Mb/sec/pin, 400MHz fCKfor 800Mb/sec/pin
? 8 Banks
? Posted CAS
? Programmable CASLatency: 3, 4, 5, 6
? Programmable Additive Latenc y: 0, 1, 2, 3, 4, 5
? Write Latency(WL) = Read Latency(RL) -1
? Burst Length: 4 , 8(Interleave/nibble sequential)
? Programmable Sequential / Interleave Burst Mode
? Bi-directional Differential Data-Strobe (Single-ended data-strobe is an optional feature)
? Off-Chip Driver(OCD) Impedance Adjustment
? On Die Termination
? Special Function Support
- 50ohm ODT
- High Temperature Self-Refresh rate enable
? Average Refresh Period 7.8us at lower than TCASE 85°C, 3.9us at 85°C < TCASE <95 °C
? All of products are Lead-Free, Halogen-Free, and RoHS compliant
產(chǎn)品屬性
- 型號(hào)：
K4T1G044QE
- 制造商：
SAMSUNG
- 制造商全稱：
Samsung semiconductor
- 功能描述：
1Gb E-die DDR2 SDRAM
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
SAMSUNG |
23+ |
FBGA |
20000 |
原廠原裝正品現(xiàn)貨 |
詢價(jià) | ||
SAMSUNG |
2016+ |
BGA |
3526 |
假一罰十進(jìn)口原裝現(xiàn)貨原盤原標(biāo)! |
詢價(jià) | ||
SAMSUNG |
589220 |
16余年資質(zhì) 絕對(duì)原盒原盤 更多數(shù)量 |
詢價(jià) | ||||
SAMSUNG |
21+ |
35200 |
一級(jí)代理/放心采購(gòu) |
詢價(jià) | |||
SAMSANG |
19+ |
BGA |
256800 |
原廠代理渠道,每一顆芯片都可追溯原廠； |
詢價(jià) | ||
SAMSUNG/三星 |
22+ |
BGA |
9000 |
原裝正品 |
詢價(jià) | ||
SAMSUNG/三星 |
24+ |
FBGA |
96880 |
只做原裝,歡迎來電資詢 |
詢價(jià) | ||
SAMSUNG |
21+ |
BGA |
12588 |
原裝正品,自己庫(kù)存 假一罰十 |
詢價(jià) | ||
SAMSUNG |
2020+ |
BGA |
80000 |
只做自己庫(kù)存,全新原裝進(jìn)口正品假一賠百,可開13%增 |
詢價(jià) | ||
SAMSUNG |
2022+ |
FBGA |
20000 |
只做原裝進(jìn)口現(xiàn)貨.假一罰十 |
詢價(jià) |
