零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
N-Channel650V(D-S)PowerMOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體(臺灣)有限公司 | VBSEMI | ||
N-ChannelEnhancementModeMOSFET | SINOPWERSinopower Semiconductor Inc 大中集成電路大中集成電路股份有限公司 | SINOPWER | ||
N-ChannelEnhancementModeMOSFET | SINOPWERSinopower Semiconductor Inc 大中集成電路大中集成電路股份有限公司 | SINOPWER | ||
N-ChannelEnhancementModeMOSFET | SINOPWERSinopower Semiconductor Inc 大中集成電路大中集成電路股份有限公司 | SINOPWER | ||
N-ChannelEnhancementModeMOSFET | SINOPWERSinopower Semiconductor Inc 大中集成電路大中集成電路股份有限公司 | SINOPWER | ||
N-ChannelEnhancementModeMOSFET | SINOPWERSinopower Semiconductor Inc 大中集成電路大中集成電路股份有限公司 | SINOPWER | ||
N-ChannelEnhancementModeMOSFET | SINOPWERSinopower Semiconductor Inc 大中集成電路大中集成電路股份有限公司 | SINOPWER | ||
N-ChannelEnhancementModeMOSFET | SINOPWERSinopower Semiconductor Inc 大中集成電路大中集成電路股份有限公司 | SINOPWER | ||
N-ChannelEnhancementModeMOSFET | SINOPWERSinopower Semiconductor Inc 大中集成電路大中集成電路股份有限公司 | SINOPWER | ||
N-ChannelEnhancementModeMOSFET | SINOPWERSinopower Semiconductor Inc 大中集成電路大中集成電路股份有限公司 | SINOPWER | ||
600WTVSinSMAFlat Features ?Peakpulsepower:600W(10/1000μs)and4kW(8/20μs) ?Flatandthinpackage:1mm ?Stand-offvoltagerangefrom5Vto188V ?Unidirectionaltype ?Lowleakagecurrent:0.2μAat25°Cand1μAat85°C ?OperatingTjmax:175°C ?HighpowercapabilityatTjmax.:upto40 | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體(ST)集團(tuán) | STMICROELECTRONICS | ||
Surface-MountTRANSZORB?TransientVoltageSuppressors FEATURES ?Verylowprofile-typicalheightof0.95mm ?Idealforautomatedplacement ?Unidirectionalonly ?Excellentclampingcapability ?Peakpulsepower: -600W(10/1000μs) -4kW(8/20μs) ?ESDcapability:IEC61000-4-2level4 -15kV(air) -8kV(contact) ?MeetsMSLleve | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
600W,12V??60VSurfaceMountTransientVoltageSuppressor | TSCTaiwan Semiconductor Company, Ltd 臺灣半導(dǎo)體臺灣半導(dǎo)體股份有限公司 | TSC | ||
600WTVSinSMBFlat Features ?Peakpulsepower:600W(10/1000μs)and4kW(8/20μs) ?Flatandthinpackage:1mm ?Stand-offvoltagerangefrom5Vto188V ?Unidirectionaltype ?Lowleakagecurrent:0.2μAat25°Cand1μAat85°C ?OperatingTjmax:175°C ?HighpowercapabilityatTjmax.:upto47 | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體(ST)集團(tuán) | STMICROELECTRONICS | ||
N-ChannelEnhancementModeMOSFET | SINOPWERSinopower Semiconductor Inc 大中集成電路大中集成電路股份有限公司 | SINOPWER | ||
Surface-MountPAR?TransientVoltageSuppressors FEATURES ?Verylowprofile-typicalheightof0.95mm ?Junctionpassivationoptimizeddesign passivatedanisotropicrectifiertechnology ?TJ=185°Ccapabilitysuitableforhigh reliabilityandautomotiverequirement ?Idealforautomatedplacement ?Unidirectionalonly ?Excellentcl | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay |
詳細(xì)參數(shù)
- 型號:
K6F22
- 制造商:
3M Electronic Products Division
- 功能描述:
RJ45 K6 SOCKET, 22,5x45MM, CAT6, FTP
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
Conquer |
23+ |
NA |
14187 |
確保原裝正品,專注終端客戶一站式BOM配單 |
詢價 | ||
SEC |
BGA |
10 |
全新原裝進(jìn)口自己庫存優(yōu)勢 |
詢價 | |||
SAMSUNG |
2016+ |
FBGA |
6528 |
只做進(jìn)口原裝現(xiàn)貨!或訂貨,假一賠十! |
詢價 | ||
SANSUNG |
2020+ |
BGA |
35000 |
100%進(jìn)口原裝正品公司現(xiàn)貨庫存 |
詢價 | ||
SEC |
17+ |
BGA |
9988 |
只做原裝進(jìn)口,自己庫存 |
詢價 | ||
6000 |
面議 |
19 |
DIP/SMD |
詢價 | |||
SAMSUNG |
2023+ |
BGA |
80000 |
一級代理/分銷渠道價格優(yōu)勢 十年芯程一路只做原裝正品 |
詢價 | ||
SAMSUNG/三星 |
2021+ |
FBGA |
100500 |
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨 |
詢價 | ||
SAMSUNG/三星 |
23+ |
FBGA |
13000 |
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種 |
詢價 | ||
SEC |
23+ |
BGA |
20000 |
全新原裝假一賠十 |
詢價 |
相關(guān)規(guī)格書
更多- K6F3216T6M
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相關(guān)庫存
更多- K6F3216T6M-F
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