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K6R1004V1D

64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.

GENERALDESCRIPTION TheK6R1004V1Disa1,048,576-bithigh-speedStaticRandomAccessMemoryorganizedas262,144wordsby4bits.TheK6R1004V1Duses4commoninputandoutputlinesandhasanoutputenablepinwhichoperatesfasterthanaddressaccesstimeatreadcycle.Thedeviceisfabricate

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K6R1004V1D-JC08

256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).

GENERALDESCRIPTION TheK6R1004C1Disa1,048,576-bithigh-speedStaticRandomAccessMemoryorganizedas262,144wordsby4bits.TheK6R1004C1Duses4commoninputandoutputlinesandhasanoutputenablepinwhichoperatesfasterthanaddressaccesstimeatreadcycle.Thedeviceisfabricate

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K6R1004V1D-JC08

64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.

GENERALDESCRIPTION TheK6R1004V1Disa1,048,576-bithigh-speedStaticRandomAccessMemoryorganizedas262,144wordsby4bits.TheK6R1004V1Duses4commoninputandoutputlinesandhasanoutputenablepinwhichoperatesfasterthanaddressaccesstimeatreadcycle.Thedeviceisfabricate

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K6R1004V1D-JC08/10

64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.

GENERALDESCRIPTION TheK6R1004V1Disa1,048,576-bithigh-speedStaticRandomAccessMemoryorganizedas262,144wordsby4bits.TheK6R1004V1Duses4commoninputandoutputlinesandhasanoutputenablepinwhichoperatesfasterthanaddressaccesstimeatreadcycle.Thedeviceisfabricate

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K6R1004V1D-JC10

256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).

GENERALDESCRIPTION TheK6R1004C1Disa1,048,576-bithigh-speedStaticRandomAccessMemoryorganizedas262,144wordsby4bits.TheK6R1004C1Duses4commoninputandoutputlinesandhasanoutputenablepinwhichoperatesfasterthanaddressaccesstimeatreadcycle.Thedeviceisfabricate

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K6R1004V1D-JC10

64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.

GENERALDESCRIPTION TheK6R1004V1Disa1,048,576-bithigh-speedStaticRandomAccessMemoryorganizedas262,144wordsby4bits.TheK6R1004V1Duses4commoninputandoutputlinesandhasanoutputenablepinwhichoperatesfasterthanaddressaccesstimeatreadcycle.Thedeviceisfabricate

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K6R1004V1D-JI08

256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).

GENERALDESCRIPTION TheK6R1004C1Disa1,048,576-bithigh-speedStaticRandomAccessMemoryorganizedas262,144wordsby4bits.TheK6R1004C1Duses4commoninputandoutputlinesandhasanoutputenablepinwhichoperatesfasterthanaddressaccesstimeatreadcycle.Thedeviceisfabricate

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K6R1004V1D-JI08

64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.

GENERALDESCRIPTION TheK6R1004V1Disa1,048,576-bithigh-speedStaticRandomAccessMemoryorganizedas262,144wordsby4bits.TheK6R1004V1Duses4commoninputandoutputlinesandhasanoutputenablepinwhichoperatesfasterthanaddressaccesstimeatreadcycle.Thedeviceisfabricate

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K6R1004V1D-JI08/10

64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.

GENERALDESCRIPTION TheK6R1004V1Disa1,048,576-bithigh-speedStaticRandomAccessMemoryorganizedas262,144wordsby4bits.TheK6R1004V1Duses4commoninputandoutputlinesandhasanoutputenablepinwhichoperatesfasterthanaddressaccesstimeatreadcycle.Thedeviceisfabricate

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K6R1004V1D-JI10

64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.

GENERALDESCRIPTION TheK6R1004V1Disa1,048,576-bithigh-speedStaticRandomAccessMemoryorganizedas262,144wordsby4bits.TheK6R1004V1Duses4commoninputandoutputlinesandhasanoutputenablepinwhichoperatesfasterthanaddressaccesstimeatreadcycle.Thedeviceisfabricate

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K6R1004V1D-JI10

256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).

GENERALDESCRIPTION TheK6R1004C1Disa1,048,576-bithigh-speedStaticRandomAccessMemoryorganizedas262,144wordsby4bits.TheK6R1004C1Duses4commoninputandoutputlinesandhasanoutputenablepinwhichoperatesfasterthanaddressaccesstimeatreadcycle.Thedeviceisfabricate

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K6R1004V1D-KC08

256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).

GENERALDESCRIPTION TheK6R1004C1Disa1,048,576-bithigh-speedStaticRandomAccessMemoryorganizedas262,144wordsby4bits.TheK6R1004C1Duses4commoninputandoutputlinesandhasanoutputenablepinwhichoperatesfasterthanaddressaccesstimeatreadcycle.Thedeviceisfabricate

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K6R1004V1D-KC08

64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.

GENERALDESCRIPTION TheK6R1004V1Disa1,048,576-bithigh-speedStaticRandomAccessMemoryorganizedas262,144wordsby4bits.TheK6R1004V1Duses4commoninputandoutputlinesandhasanoutputenablepinwhichoperatesfasterthanaddressaccesstimeatreadcycle.Thedeviceisfabricate

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K6R1004V1D-KC08/10

64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.

GENERALDESCRIPTION TheK6R1004V1Disa1,048,576-bithigh-speedStaticRandomAccessMemoryorganizedas262,144wordsby4bits.TheK6R1004V1Duses4commoninputandoutputlinesandhasanoutputenablepinwhichoperatesfasterthanaddressaccesstimeatreadcycle.Thedeviceisfabricate

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K6R1004V1D-KC10

256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).

GENERALDESCRIPTION TheK6R1004C1Disa1,048,576-bithigh-speedStaticRandomAccessMemoryorganizedas262,144wordsby4bits.TheK6R1004C1Duses4commoninputandoutputlinesandhasanoutputenablepinwhichoperatesfasterthanaddressaccesstimeatreadcycle.Thedeviceisfabricate

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K6R1004V1D-KC10

64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.

GENERALDESCRIPTION TheK6R1004V1Disa1,048,576-bithigh-speedStaticRandomAccessMemoryorganizedas262,144wordsby4bits.TheK6R1004V1Duses4commoninputandoutputlinesandhasanoutputenablepinwhichoperatesfasterthanaddressaccesstimeatreadcycle.Thedeviceisfabricate

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K6R1004V1D-KI08

256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).

GENERALDESCRIPTION TheK6R1004C1Disa1,048,576-bithigh-speedStaticRandomAccessMemoryorganizedas262,144wordsby4bits.TheK6R1004C1Duses4commoninputandoutputlinesandhasanoutputenablepinwhichoperatesfasterthanaddressaccesstimeatreadcycle.Thedeviceisfabricate

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K6R1004V1D-KI08

64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.

GENERALDESCRIPTION TheK6R1004V1Disa1,048,576-bithigh-speedStaticRandomAccessMemoryorganizedas262,144wordsby4bits.TheK6R1004V1Duses4commoninputandoutputlinesandhasanoutputenablepinwhichoperatesfasterthanaddressaccesstimeatreadcycle.Thedeviceisfabricate

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K6R1004V1D-KI08/10

64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.

GENERALDESCRIPTION TheK6R1004V1Disa1,048,576-bithigh-speedStaticRandomAccessMemoryorganizedas262,144wordsby4bits.TheK6R1004V1Duses4commoninputandoutputlinesandhasanoutputenablepinwhichoperatesfasterthanaddressaccesstimeatreadcycle.Thedeviceisfabricate

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K6R1004V1D-KI10

256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).

GENERALDESCRIPTION TheK6R1004C1Disa1,048,576-bithigh-speedStaticRandomAccessMemoryorganizedas262,144wordsby4bits.TheK6R1004C1Duses4commoninputandoutputlinesandhasanoutputenablepinwhichoperatesfasterthanaddressaccesstimeatreadcycle.Thedeviceisfabricate

SamsungSamsung semiconductor

三星三星半導(dǎo)體

詳細(xì)參數(shù)

  • 型號：

    K6R1004V1D

  • 制造商：

    SAMSUNG

  • 制造商全稱：

    Samsung semiconductor

  • 功能描述：

    64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.

供應(yīng)商型號品牌批號封裝庫存備注價格
SAMSUNG
22+
SOJ-32
4650
詢價
SAMSUNG
24+
SOJ
556
詢價
SAMSUNG
23+
SOJ
8890
價格優(yōu)勢/原裝現(xiàn)貨/客戶至上/歡迎廣大客戶來電查詢
 詢價
SAMSANG
19+
SOJ
256800
原廠代理渠道,每一顆芯片都可追溯原廠；
 詢價
SAMSUNG
22+23+
SOJ
39604
絕對原裝正品全新進(jìn)口深圳現(xiàn)貨
 詢價
SAMSUNG
6000
面議
19
SOJ
 詢價
SAMSUNG
2023+
SOJ
80000
一級代理/分銷渠道價格優(yōu)勢 十年芯程一路只做原裝正品
 詢價
SAMSUNG
2022
SOJ
5595
全新原裝現(xiàn)貨
 詢價
SAMSUNG/三星
21+
SOJ
10000
原裝現(xiàn)貨假一罰十
 詢價
SAMSUNG/三星
23+
SOJ-32
13000
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
 詢價
更多K6R1004V1D供應(yīng)商 更新時間2024-11-20 16:42:00

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