首頁 >K6R4008C1D>規(guī)格書列表

零件編號下載&訂購功能描述制造商&上傳企業(yè)LOGO

K6R4008C1D

512Kx8 Bit High Speed Static RAM(5.0V Operating)

GENERALDESCRIPTION TheK6R4008C1Disa4,194,304-bithigh-speedStaticRandomAccessMemoryorganizedas524,288wordsby8bits.TheK6R4008C1Duses8commoninputandoutputlinesandhasanoutputenablepinwhichoperatesfasterthanaddressaccesstimeatreadcycle.Thedeviceisfabrica

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K6R4008C1D

1Mx4 Bit High Speed Static RAM(3.3V Operating). Operated at Commercial and Industrial Temperature Ranges

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K6R4008C1D-JC0810

1Mx4 Bit High Speed Static RAM(5.0V Operating)

GENERALDESCRIPTION TheK6R4004C1Disa4,194,304-bithigh-speedStaticRandomAccessMemoryorganizedas1,048,576wordsby4bits.TheK6R4004C1Duses4commoninputandoutputlinesandhasanoutputenablepinwhichoperatesfasterthanaddressaccesstimeatreadcycle.Thedeviceisfabrica

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K6R4008C1D-JC10

256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges.

GENERALDESCRIPTION TheK6R4016C1Disa4,194,304-bithigh-speedStaticRandomAccessMemoryorganizedas262,144wordsby16bits.TheK6R4016C1Duses16commoninputandoutputlinesandhasanoutputenablepinwhichoperatesfasterthanaddressaccesstimeatreadcycle.Alsoitallowsthatl

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K6R4008C1D-JC10

1Mx4 Bit High Speed Static RAM(5.0V Operating)

GENERALDESCRIPTION TheK6R4004C1Disa4,194,304-bithigh-speedStaticRandomAccessMemoryorganizedas1,048,576wordsby4bits.TheK6R4004C1Duses4commoninputandoutputlinesandhasanoutputenablepinwhichoperatesfasterthanaddressaccesstimeatreadcycle.Thedeviceisfabrica

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K6R4008C1D-JI0810

1Mx4 Bit High Speed Static RAM(5.0V Operating)

GENERALDESCRIPTION TheK6R4004C1Disa4,194,304-bithigh-speedStaticRandomAccessMemoryorganizedas1,048,576wordsby4bits.TheK6R4004C1Duses4commoninputandoutputlinesandhasanoutputenablepinwhichoperatesfasterthanaddressaccesstimeatreadcycle.Thedeviceisfabrica

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K6R4008C1D-JI10

256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges.

GENERALDESCRIPTION TheK6R4016C1Disa4,194,304-bithigh-speedStaticRandomAccessMemoryorganizedas262,144wordsby16bits.TheK6R4016C1Duses16commoninputandoutputlinesandhasanoutputenablepinwhichoperatesfasterthanaddressaccesstimeatreadcycle.Alsoitallowsthatl

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K6R4008C1D-JI10

1Mx4 Bit High Speed Static RAM(5.0V Operating)

GENERALDESCRIPTION TheK6R4004C1Disa4,194,304-bithigh-speedStaticRandomAccessMemoryorganizedas1,048,576wordsby4bits.TheK6R4004C1Duses4commoninputandoutputlinesandhasanoutputenablepinwhichoperatesfasterthanaddressaccesstimeatreadcycle.Thedeviceisfabrica

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K6R4008C1D-KC0810

1Mx4 Bit High Speed Static RAM(5.0V Operating)

GENERALDESCRIPTION TheK6R4004C1Disa4,194,304-bithigh-speedStaticRandomAccessMemoryorganizedas1,048,576wordsby4bits.TheK6R4004C1Duses4commoninputandoutputlinesandhasanoutputenablepinwhichoperatesfasterthanaddressaccesstimeatreadcycle.Thedeviceisfabrica

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K6R4008C1D-KC10

1Mx4 Bit High Speed Static RAM(5.0V Operating)

GENERALDESCRIPTION TheK6R4004C1Disa4,194,304-bithigh-speedStaticRandomAccessMemoryorganizedas1,048,576wordsby4bits.TheK6R4004C1Duses4commoninputandoutputlinesandhasanoutputenablepinwhichoperatesfasterthanaddressaccesstimeatreadcycle.Thedeviceisfabrica

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K6R4008C1D-KC10

256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges.

GENERALDESCRIPTION TheK6R4016C1Disa4,194,304-bithigh-speedStaticRandomAccessMemoryorganizedas262,144wordsby16bits.TheK6R4016C1Duses16commoninputandoutputlinesandhasanoutputenablepinwhichoperatesfasterthanaddressaccesstimeatreadcycle.Alsoitallowsthatl

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K6R4008C1D-KI0810

1Mx4 Bit High Speed Static RAM(5.0V Operating)

GENERALDESCRIPTION TheK6R4004C1Disa4,194,304-bithigh-speedStaticRandomAccessMemoryorganizedas1,048,576wordsby4bits.TheK6R4004C1Duses4commoninputandoutputlinesandhasanoutputenablepinwhichoperatesfasterthanaddressaccesstimeatreadcycle.Thedeviceisfabrica

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K6R4008C1D-KI10

256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges.

GENERALDESCRIPTION TheK6R4016C1Disa4,194,304-bithigh-speedStaticRandomAccessMemoryorganizedas262,144wordsby16bits.TheK6R4016C1Duses16commoninputandoutputlinesandhasanoutputenablepinwhichoperatesfasterthanaddressaccesstimeatreadcycle.Alsoitallowsthatl

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K6R4008C1D-KI10

1Mx4 Bit High Speed Static RAM(5.0V Operating)

GENERALDESCRIPTION TheK6R4004C1Disa4,194,304-bithigh-speedStaticRandomAccessMemoryorganizedas1,048,576wordsby4bits.TheK6R4004C1Duses4commoninputandoutputlinesandhasanoutputenablepinwhichoperatesfasterthanaddressaccesstimeatreadcycle.Thedeviceisfabrica

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K6R4008C1D-TC0810

1Mx4 Bit High Speed Static RAM(5.0V Operating)

GENERALDESCRIPTION TheK6R4004C1Disa4,194,304-bithigh-speedStaticRandomAccessMemoryorganizedas1,048,576wordsby4bits.TheK6R4004C1Duses4commoninputandoutputlinesandhasanoutputenablepinwhichoperatesfasterthanaddressaccesstimeatreadcycle.Thedeviceisfabrica

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K6R4008C1D-TC10

256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges.

GENERALDESCRIPTION TheK6R4016C1Disa4,194,304-bithigh-speedStaticRandomAccessMemoryorganizedas262,144wordsby16bits.TheK6R4016C1Duses16commoninputandoutputlinesandhasanoutputenablepinwhichoperatesfasterthanaddressaccesstimeatreadcycle.Alsoitallowsthatl

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K6R4008C1D-TC10

1Mx4 Bit High Speed Static RAM(5.0V Operating)

GENERALDESCRIPTION TheK6R4004C1Disa4,194,304-bithigh-speedStaticRandomAccessMemoryorganizedas1,048,576wordsby4bits.TheK6R4004C1Duses4commoninputandoutputlinesandhasanoutputenablepinwhichoperatesfasterthanaddressaccesstimeatreadcycle.Thedeviceisfabrica

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K6R4008C1D-TI0810

1Mx4 Bit High Speed Static RAM(5.0V Operating)

GENERALDESCRIPTION TheK6R4004C1Disa4,194,304-bithigh-speedStaticRandomAccessMemoryorganizedas1,048,576wordsby4bits.TheK6R4004C1Duses4commoninputandoutputlinesandhasanoutputenablepinwhichoperatesfasterthanaddressaccesstimeatreadcycle.Thedeviceisfabrica

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K6R4008C1D-TI10

256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges.

GENERALDESCRIPTION TheK6R4016C1Disa4,194,304-bithigh-speedStaticRandomAccessMemoryorganizedas262,144wordsby16bits.TheK6R4016C1Duses16commoninputandoutputlinesandhasanoutputenablepinwhichoperatesfasterthanaddressaccesstimeatreadcycle.Alsoitallowsthatl

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K6R4008C1D-TI10

1Mx4 Bit High Speed Static RAM(5.0V Operating)

GENERALDESCRIPTION TheK6R4004C1Disa4,194,304-bithigh-speedStaticRandomAccessMemoryorganizedas1,048,576wordsby4bits.TheK6R4004C1Duses4commoninputandoutputlinesandhasanoutputenablepinwhichoperatesfasterthanaddressaccesstimeatreadcycle.Thedeviceisfabrica

SamsungSamsung semiconductor

三星三星半導(dǎo)體

詳細參數(shù)

  • 型號：

    K6R4008C1D

  • 制造商：

    SAMSUNG

  • 制造商全稱：

    Samsung semiconductor

  • 功能描述：

    1Mx4 Bit High Speed Static RAM(3.3V Operating). Operated at Commercial and Industrial Temperature Ranges

供應(yīng)商型號品牌批號封裝庫存備注價格
SAMSUNG
TSOP44
450
正品原裝--自家現(xiàn)貨-實單可談
 詢價
SAMSUNG
15+
11560
全新原裝,現(xiàn)貨庫存,長期供應(yīng)
 詢價
SAMSUNG
2016+
TSOP44
6523
只做進口原裝現(xiàn)貨!假一賠十!
 詢價
SAM
24+
9534
詢價
SAMSUNG
SOJ36
0335+
258
全新原裝進口自己庫存優(yōu)勢
 詢價
SAMSUNG
24+
6980
原裝現(xiàn)貨,可開13%稅票
 詢價
SAMSUNG
23+
SOJ36
5000
原裝正品,假一罰十
 詢價
進口原裝
23+
SSOP
2000
全新原裝
 詢價
SAMSUNG
23+
TSOP
35890
詢價
SAMSUNG
2339+
SOJ36
5825
公司原廠原裝現(xiàn)貨假一罰十!特價出售!強勢庫存!
 詢價
更多K6R4008C1D供應(yīng)商 更新時間2025-1-19 10:20:00

相關(guān)規(guī)格書

更多

相關(guān)庫存

更多