K7R163684B中文資料三星數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

GENERAL DESCRIPTION

The K7R163684B and K7R161884B are 18,874,368-bits QDR (Quad Data Rate) Synchronous Pipelined Burst SRAMs.

They are organized as 524,288 words by 36bits for K7R163684B and 1,048,576 words by 18 bits for K7R161884B.

FEATURES

? 1.8V+0.1V/-0.1V Power Supply.

? DLL circuitry for wide output data valid window and future frequency scaling.

? I/O Supply Voltage 1.5V+0.1V/-0.1V for 1.5V I/O, 1.8V+0.1V/-0.1V for 1.8V I/O.

? Separate independent read and write data ports with concurrent read and write operation

? HSTL I/O

? Full data coherency, providing most current data.

? Synchronous pipeline read with self timed late write.

? Registered address, control and data input/output.

? DDR (Double Data Rate) Interface on read and write ports.

? Fixed 4-bit burst for both read and write operation.

? Clock-stop supports to reduce current.

? Two input clocks (K and K) for accurate DDR timing at clock rising edges only.

? Two input clocks for output data (C and C) to minimize clock-skew and flight-time mismatches.

? Two echo clocks (CQ and CQ) to enhance output data traceability.

? Single address bus.

? Byte write (x18, x36) function.

? Separate read/write control pin(R and W)

? Simple depth expansion with no data contention.

? Programmable output impedance.

? JTAG 1149.1 compatible test access port.

? 165FBGA(11x15 ball array) with body size of 13mmx15mm. & Lead Free

? Operating in commercial and industrial temperature range.