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K8P5616UZB中文資料三星數(shù)據(jù)手冊PDF規(guī)格書

K8P5616UZB
廠商型號

K8P5616UZB

功能描述

256Mb B-die Page NOR FLASH

文件大小

1.15766 Mbytes

頁面數(shù)量

60

生產(chǎn)廠商 Samsung semiconductor
企業(yè)簡稱

Samsung三星

中文名稱

三星半導體官網(wǎng)

原廠標識
數(shù)據(jù)手冊

下載地址一下載地址二到原廠下載

更新時間

2025-1-11 17:49:00

K8P5616UZB規(guī)格書詳情

GENERAL DESCRIPTION

The K8P5616UZB featuring single 3.0V power supply, is an 256Mbit NORtype Flash Memory organized as 32M x 8 or 16M x16. The memory architecture of the device is designed to divide its memory arrays into 256 blocks with independent hardware protection. This block architecture provides highly flexible erase and program capability. The K8P5616UZB NOR Flash consists of four banks. This device is capable of reading data from one bank while programming or erasing in the other banks.

FEATURES

? Single Voltage, 2.7V to 3.6V for Read and Write operations Voltage range of 2.7V to 3.1V valid for MCP product

? Organization

16M x16 bit (Word mode)

32M x 8 bit (Byte mode)

? Fast Read Access Time : 80ns

? Page Mode Operation

8 Words Page access allows fast asychronous read Page Read Access Time : 30ns

? Read While Program/Erase Operation

? Multiple Bank Architecture (4 Banks)

Bank 0: 32Mbit (64Kw x 32)

Bank 1: 96Mbit (64Kw x 96)

Bank 2: 96Mbit (64Kw x 96)

Bank 3: 32Mbit (64Kw x 32)

? OTP Block : Extra 256 word

- 128word for factory and 128word for customer OTP

? Power Consumption (typical value)

- Active Read Current : 30mA (@5MHz)

- Program/Erase Current : 25mA

- Read While Program or Read While Erase Current : 65mA

- Standby Mode/Auto Sleep Mode : 20uA

? Support Single & 32word Buffer Program

? WP/ACC input pin

- Allows special protection of first or last block of flash array at VIL, regardless of block protect status

- Removes special protection at VIH, the first or last block of flash array return to normal block protect status

- Reduce program time at VHH : 6us/word at Write Buffer

? Erase Suspend/Resume

? Program Suspend/Resume

? Unlock Bypass Mode

? Hardware RESET Pin

? Command Register Operation

? Supports Common Flash Memory Interface

? Industrial Temperature : -40°C to 85°C

? Extended Temperature : -25°C to 85°C

? Endurance : 100Kcycle

? Vio options at 1.8V and 3V I/O

? Package options

- 56 Pin TSOP (20x14mm)

- 64 Ball FBGA (11x13, 1.0mm Ball Pitch)

產(chǎn)品屬性

  • 型號:

    K8P5616UZB

  • 制造商:

    SAMSUNG

  • 制造商全稱:

    Samsung semiconductor

  • 功能描述:

    256Mb B-die Page NOR FLASH

供應商 型號 品牌 批號 封裝 庫存 備注 價格
SEC
07+
BGA
5000
全新原裝進口自己庫存優(yōu)勢
詢價
SAMSUNG/三星
BGA
68900
原包原標簽100%進口原裝常備現(xiàn)貨!
詢價
SAMSUNG/三星
2022
FBGA
80000
原裝現(xiàn)貨,OEM渠道,歡迎咨詢
詢價
SAMSANG
19+
FBGA
256800
原廠代理渠道,每一顆芯片都可追溯原廠;
詢價
SAMSUNG
1110+1113+
BGA
45
原裝現(xiàn)貨海量庫存歡迎咨詢
詢價
SAMSUNG/三星
23+
FBGA
98900
原廠原裝正品現(xiàn)貨!!
詢價
SAMSUNG
23+
BGA
5000
原裝正品,假一罰十
詢價
SAM
24+
380
詢價
SAMSUNG
2020+
TSSOP
80000
只做自己庫存,全新原裝進口正品假一賠百,可開13%增
詢價
SAMSUNG
23+
FBGA
8000
只做原裝現(xiàn)貨
詢價