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K9F1208D0B-Y中文資料三星數據手冊PDF規(guī)格書
K9F1208D0B-Y規(guī)格書詳情
GENERAL DESCRIPTION
Offered in 64Mx8bit the K9F1208X0B is 512M bit with spare 16M bit capacity. The device is offered in 1.8V, 2.65V, 3.3V Vcc. Its NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program operation can be performed in typical 200ms on the 528-byte page and an erase operation can be performed in typical 2ms on a 16K-byte block. Data in the page can be read out at 50ns cycle time per byte. The I/O pins serve as the ports for address and data input/output as well as command input. The on-chip write control automates all program and erase functions including pulse repetition, where required, and internal verification and margining of data. Even the write-intensive systems can take advantage of the K9F1208X0B¢s extended reliability of 100K program/erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The K9F1208X0B is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable applications requiring non-volatility.
FEATURES
? Voltage Supply
- 1.8V device(K9F1208Q0B) : 1.70~1.95V
- 2.65V device(K9F1208D0B) : 2.4~2.9V
- 3.3V device(K9F1208U0B) : 2.7 ~ 3.6 V
? Organization
- Memory Cell Array : (64M + 2048K)bit x 8 bit
- Data Register : (512 + 16)bit x 8bit
? Automatic Program and Erase
- Page Program : (512 + 16)Byte
- Block Erase : (16K + 512)Byte
? Page Read Operation
- Page Size : (512 + 16)Byte
- Random Access : 15ms(Max.)
- Serial Page Access : 50ns(Min.)
? Fast Write Cycle Time
- Program time : 200ms(Typ.)
- Block Erase Time : 2ms(Typ.)
? Command/Address/Data Multiplexed I/O Port
? Hardware Data Protection
- Program/Erase Lockout During Power Transitions
? Reliable CMOS Floating-Gate Technology
- Endurance : 100K Program/Erase Cycles
- Data Retention : 10 Years
? Command Register Operation
? Intelligent Copy-Back
? Unique ID for Copyright Protection
? Package
- K9F1208X0B-YCB0/YIB0
48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)
- K9F1208X0B-GCB0/GIB0
63- Ball FBGA (8.5 x 13 , 1.0 mm width)
- K9F1208U0B-VCB0/VIB0
48 - Pin WSOP I (12X17X0.7mm)
- K9F1208X0B-PCB0/PIB0
48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)- Pb-free Package
- K9F1208X0B-JCB0/JIB0
63- Ball FBGA - Pb-free Package
- K9F1208U0B-FCB0/FIB0
48 - Pin WSOP I (12X17X0.7mm)- Pb-free Package
* K9F1208U0B-V,F(WSOPI ) is the same device as K9F1208U0B-Y,P(TSOP1) except package type.
產品屬性
- 型號:
K9F1208D0B-Y
- 制造商:
SAMSUNG
- 制造商全稱:
Samsung semiconductor
- 功能描述:
64M x 8 Bit NAND Flash Memory
供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
SAMSUNG |
2016+ |
BGA |
6000 |
公司只做原裝,假一罰十,可開17%增值稅發(fā)票! |
詢價 | ||
SAMSUNG |
2022 |
BGA |
2300 |
原裝現(xiàn)貨,誠信經營! |
詢價 | ||
SAMSANG |
19+ |
BGA |
256800 |
原廠代理渠道,每一顆芯片都可追溯原廠; |
詢價 | ||
SAMSUNG |
22+ |
BGA |
8000 |
原裝正品支持實單 |
詢價 | ||
Samsung |
2020+ |
BGA |
58 |
百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可 |
詢價 | ||
SAMSUNG/三星 |
FBGA |
68900 |
原包原標簽100%進口原裝常備現(xiàn)貨! |
詢價 | |||
SAMSUNG/三星 |
24+ |
FBGA |
6880 |
只做原裝,公司現(xiàn)貨庫存 |
詢價 | ||
SAMSUNG |
2023+ |
FBGA63 |
80000 |
一級代理/分銷渠道價格優(yōu)勢 十年芯程一路只做原裝正品 |
詢價 | ||
SAMSUNG |
24+ |
BGA |
813 |
詢價 | |||
sam |
24+ |
TSOP |
16800 |
絕對原裝進口現(xiàn)貨,假一賠十,價格優(yōu)勢!? |
詢價 |