首頁>K9F1G16Q0M>規(guī)格書詳情

K9F1G16Q0M中文資料三星數(shù)據(jù)手冊PDF規(guī)格書

K9F1G16Q0M
廠商型號

K9F1G16Q0M

功能描述

128M x 8 Bit / 64M x 16 Bit NAND Flash Memory

文件大小

729.28 Kbytes

頁面數(shù)量

40

生產(chǎn)廠商 Samsung semiconductor
企業(yè)簡稱

Samsung三星

中文名稱

三星半導體官網(wǎng)

原廠標識
數(shù)據(jù)手冊

下載地址一下載地址二到原廠下載

更新時間

2025-1-10 11:09:00

K9F1G16Q0M規(guī)格書詳情

GENERAL DESCRIPTION

Offered in 128Mx8bit or 64Mx16bit, the K9F1GXXX0M is 1G bit with spare 32M bit capacity. Its NAND cell provides the most cost effective solution for the solid state mass storage market. A program operation can be performed in typical 300ms on the 2112-byte(X8 device) or 1056-word(X16 device) page and an erase operation can be performed in typical 2ms on a 128K-byte(X8 device) or 64K-word(X16 device) block. Data in the data page can be read out at 50ns(1.8V device : 80ns) cycle time per byte(X8 device) or word(X16 device).. The I/O pins serve as the ports for address and data input/output as well as command input. The on-chip write controller automates all program and erase functions including pulse repetition, where required, and internal verification and margin ing of data. Even the write-intensive systems can take advantage of the K9F1GXXX0M¢s extended reliability of 100K program/erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The K9F1GXXX0M is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable applications requiring non-volatility.

FEATURES

· Voltage Supply

-1.8V device(K9F1GXXQ0M): 1.70V~1.95V

- 2.65V device(K9F1GXXD0M) : 2.4~2.9V

-3.3V device(K9F1GXXU0M): 2.7 V ~3.6 V

· Organization

- Memory Cell Array

-X8 device(K9F1G08X0M) : (128M + 4,096K)bit x 8bit

-X16 device(K9F1G16X0M) : (64M + 2,048K)bit x 16bit

- Data Register

-X8 device(K9F1G08X0M): (2K + 64)bit x8bit

-X16 device(K9F1G16X0M): (1K + 32)bit x16bit

- Cache Register

-X8 device(K9F1G08X0M): (2K + 64)bit x8bit

-X16 device(K9F1G16X0M): (1K + 32)bit x16bit

· Automatic Program and Erase

- Page Program

-X8 device(K9F1G08X0M): (2K + 64)Byte

-X16 device(K9F1G16X0M): (1K + 32)Word

- Block Erase

-X8 device(K9F1G08X0M): (128K + 4K)Byte

-X16 device(K9F1G16X0M): (64K + 2K)Word

· Page Read Operation

- Page Size

- X8 device(K9F1G08X0M): 2K-Byte

- X16 device(K9F1G16X0M) : 1K-Word

- Random Read : 25ms(Max.)

- Serial Access : 50ns(Min.)*

*K9F1GXXQ0M : 80ns

· Fast Write Cycle Time

- Program time : 300ms(Typ.)

- Block Erase Time : 2ms(Typ.)

· Command/Address/Data Multiplexed I/O Port

· Hardware Data Protection

- Program/Erase Lockout During Power Transitions

· Reliable CMOS Floating-Gate Technology

- Endurance : 100K Program/Erase Cycles

- Data Retention : 10 Years

· Command Register Operation

· Cache Program Operation for High Performance Program

· Power-On Auto-Read Operation

· Intelligent Copy-Back Operation

· Unique ID for Copyright Protection

· Package :

- K9F1GXXX0M-YCB0/YIB0

48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)

- K9F1G08U0M-VCB0/VIB0

48 - Pin WSOP I (12X17X0.7mm)

- K9F1GXXX0M-PCB0/PIB0

48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)- Pb-free Package

- K9F1G08U0M-FCB0/FIB0

48 - Pin WSOP I (12X17X0.7mm)- Pb-free Package

* K9F1G08U0M-V,F(WSOPI ) is the same device as

K9F1G08U0M-Y,P(TSOP1) except package type.

產(chǎn)品屬性

  • 型號:

    K9F1G16Q0M

  • 制造商:

    SAMSUNG

  • 制造商全稱:

    Samsung semiconductor

  • 功能描述:

    128M x 8 Bit/64M x 16 Bit NAND Flash Memory

供應商 型號 品牌 批號 封裝 庫存 備注 價格
SAMSUNG/三星
23+
TSOP48
13000
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
詢價
Samsung
19+
TSOP-48PIN
76207
原廠代理渠道,每一顆芯片都可追溯原廠;
詢價
SAMSUNG
2022+
TSOP
20000
只做原裝進口現(xiàn)貨.假一罰十
詢價
SAMSUNG
1923+
TSOP
9865
原裝進口現(xiàn)貨庫存專業(yè)工廠研究所配單供貨
詢價
SAMSUNG
16+
BGA
4000
進口原裝現(xiàn)貨/價格優(yōu)勢!
詢價
SAMSUNG
2023+
TSOP
5378
全新原廠原裝產(chǎn)品、公司現(xiàn)貨銷售
詢價
專營SAMSUNG
23+
TSOP
3500
詢價
SAMSUNG/三星
10+
TSOP48
10811
只做原廠原裝,認準寶芯創(chuàng)配單專家
詢價
SAMSUNG/三星
1902+
TSOP48
2734
代理品牌
詢價
SAMSUNG
24+
BGA
6500
獨立分銷商 公司只做原裝 誠心經(jīng)營 免費試樣正品保證
詢價