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K9F2G08R0A-J中文資料三星數(shù)據(jù)手冊(cè)PDF規(guī)格書

K9F2G08R0A-J
廠商型號(hào)

K9F2G08R0A-J

功能描述

FLASH MEMORY

文件大小

999.07 Kbytes

頁面數(shù)量

44

生產(chǎn)廠商 Samsung semiconductor
企業(yè)簡(jiǎn)稱

Samsung三星

中文名稱

三星半導(dǎo)體官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠下載

更新時(shí)間

2025-2-20 22:59:00

K9F2G08R0A-J規(guī)格書詳情

GENERAL DESCRIPTION

Offered in 256Mx8bit, the K9F2G08X0A is a 2G-bit NAND Flash Memory with spare 64M-bit. Its NAND cell provides the most cost effective solution for the solid state application market. A program operation can be performed in typical 200μs on the (2K+64)Byte page and an erase operation can be performed in typical 1.5ms on a (128K+4K)Byte block. Data in the data register can be read out at 25ns(42ns with 1.8V device) cycle time per Byte. The I/O pins serve as the ports for address and data input/output as well as command input. The on-chip write controller automates all program and erase functions including pulse repetition, where required, and internal verification and margining of data. Even the write-intensive systems can take advantage of the K9F2G08X0A′s extended reliability of 100K program/erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The K9F2G08X0A is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable applications requiring non-volatility.

FEATURES

? Voltage Supply

- 1.65V ~ 1.95V

- 2.70V ~ 3.60V

? Organization

- Memory Cell Array : (256M + 8M) x 8bit

- Data Register : (2K + 64) x 8bit

? Automatic Program and Erase

- Page Program : (2K + 64)Byte

- Block Erase : (128K + 4K)Byte

? Page Read Operation

- Page Size : (2K + 64)Byte

- Random Read : 25μs(Max.)

- Serial Access : 25ns(Min.)

(*K9F2G08R0A: tRC = 42ns(Min))

? Fast Write Cycle Time

- Page Program time : 200μs(Typ.)

- Block Erase Time : 1.5ms(Typ.)

? Command/Address/Data Multiplexed I/O Port

? Hardware Data Protection

- Program/Erase Lockout During Power Transitions

? Reliable CMOS Floating-Gate Technology

-Endurance : 100K Program/Erase Cycles(with 1bit/512Byte

ECC)

- Data Retention : 10 Years

? Command Driven Operation

? Intelligent Copy-Back with internal 1bit/528Byte EDC

? Unique ID for Copyright Protection

? Package :

- K9F2G08R0A-JCB0/JIB0 : Pb-FREE PACKAGE

63 - Ball FBGA I (10 x 13 / 0.8 mm pitch)

- K9F2G08U0A-PCB0/PIB0 : Pb-FREE PACKAGE

48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)

- K9F2G08U0A-ICB0/IIB0

52 - Pin ULGA (12 x 17 / 1.00 mm pitch)

產(chǎn)品屬性

  • 型號(hào):

    K9F2G08R0A-J

  • 制造商:

    SAMSUNG

  • 制造商全稱:

    Samsung semiconductor

  • 功能描述:

    FLASH MEMORY

供應(yīng)商 型號(hào) 品牌 批號(hào) 封裝 庫(kù)存 備注 價(jià)格
SAMSUNG/三星
23+
NA/
30
優(yōu)勢(shì)代理渠道,原裝正品,可全系列訂貨開增值稅票
詢價(jià)
BGA
2020+
BGA
80000
只做自己庫(kù)存,全新原裝進(jìn)口正品假一賠百,可開13%增
詢價(jià)
SAMSUNG
2022+
7600
原廠原裝,假一罰十
詢價(jià)
SAMSUNG
24+
BGA
20000
全新原廠原裝,進(jìn)口正品現(xiàn)貨,正規(guī)渠道可含稅?。?/div>
詢價(jià)
SAMSUNG/三星
08+
BGA
183
一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
詢價(jià)
SAMSUNG/三星
20+
BGA63
35830
原裝優(yōu)勢(shì)主營(yíng)型號(hào)-可開原型號(hào)增稅票
詢價(jià)
SAMSUNG
2138+
BGA
8960
專營(yíng)BGA,QFP原裝現(xiàn)貨,假一賠十
詢價(jià)
SAMSUNG
23+
原廠封裝
9526
詢價(jià)
SAMSUNG
21+
FBGA
1609
只做原裝,絕對(duì)現(xiàn)貨,原廠代理商渠道,歡迎電話微信查
詢價(jià)
SAMSUNG/三星
23+
BGA
98900
原廠原裝正品現(xiàn)貨!!
詢價(jià)