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K9F2G08U0A-I中文資料三星數(shù)據(jù)手冊(cè)PDF規(guī)格書
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廠商型號(hào) |
K9F2G08U0A-I |
功能描述 | FLASH MEMORY |
文件大小 |
999.07 Kbytes |
頁(yè)面數(shù)量 |
44 頁(yè) |
生產(chǎn)廠商 | Samsung semiconductor |
企業(yè)簡(jiǎn)稱 |
Samsung【三星】 |
中文名稱 | 三星半導(dǎo)體官網(wǎng) |
原廠標(biāo)識(shí) | ![]() |
數(shù)據(jù)手冊(cè) | |
更新時(shí)間 | 2025-2-23 12:20:00 |
人工找貨 | K9F2G08U0A-I價(jià)格和庫(kù)存,歡迎聯(lián)系客服免費(fèi)人工找貨 |
K9F2G08U0A-I規(guī)格書詳情
GENERAL DESCRIPTION
Offered in 256Mx8bit, the K9F2G08X0A is a 2G-bit NAND Flash Memory with spare 64M-bit. Its NAND cell provides the most cost effective solution for the solid state application market. A program operation can be performed in typical 200μs on the (2K+64)Byte page and an erase operation can be performed in typical 1.5ms on a (128K+4K)Byte block. Data in the data register can be read out at 25ns(42ns with 1.8V device) cycle time per Byte. The I/O pins serve as the ports for address and data input/output as well as command input. The on-chip write controller automates all program and erase functions including pulse repetition, where required, and internal verification and margining of data. Even the write-intensive systems can take advantage of the K9F2G08X0A′s extended reliability of 100K program/erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The K9F2G08X0A is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable applications requiring non-volatility.
FEATURES
? Voltage Supply
- 1.65V ~ 1.95V
- 2.70V ~ 3.60V
? Organization
- Memory Cell Array : (256M + 8M) x 8bit
- Data Register : (2K + 64) x 8bit
? Automatic Program and Erase
- Page Program : (2K + 64)Byte
- Block Erase : (128K + 4K)Byte
? Page Read Operation
- Page Size : (2K + 64)Byte
- Random Read : 25μs(Max.)
- Serial Access : 25ns(Min.)
(*K9F2G08R0A: tRC = 42ns(Min))
? Fast Write Cycle Time
- Page Program time : 200μs(Typ.)
- Block Erase Time : 1.5ms(Typ.)
? Command/Address/Data Multiplexed I/O Port
? Hardware Data Protection
- Program/Erase Lockout During Power Transitions
? Reliable CMOS Floating-Gate Technology
-Endurance : 100K Program/Erase Cycles(with 1bit/512Byte
ECC)
- Data Retention : 10 Years
? Command Driven Operation
? Intelligent Copy-Back with internal 1bit/528Byte EDC
? Unique ID for Copyright Protection
? Package :
- K9F2G08R0A-JCB0/JIB0 : Pb-FREE PACKAGE
63 - Ball FBGA I (10 x 13 / 0.8 mm pitch)
- K9F2G08U0A-PCB0/PIB0 : Pb-FREE PACKAGE
48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)
- K9F2G08U0A-ICB0/IIB0
52 - Pin ULGA (12 x 17 / 1.00 mm pitch)
產(chǎn)品屬性
- 型號(hào):
K9F2G08U0A-I
- 制造商:
SAMSUNG
- 制造商全稱:
Samsung semiconductor
- 功能描述:
FLASH MEMORY
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
SAMSUNG/三星 |
22+ |
TSOP48 |
158312 |
原裝正品現(xiàn)貨,可開13個(gè)點(diǎn)稅 |
詢價(jià) | ||
SAMSUNG |
24+ |
N/A |
5000 |
全新原裝正品,現(xiàn)貨銷售 |
詢價(jià) | ||
SAMSUNG |
24+ |
35200 |
一級(jí)代理/放心采購(gòu) |
詢價(jià) | |||
SAMSUNG |
21+ |
TSOP48 |
12588 |
原裝正品,自己庫(kù)存 假一罰十 |
詢價(jià) | ||
SAMSUNG |
2020+ |
LGA53 |
80000 |
只做自己庫(kù)存,全新原裝進(jìn)口正品假一賠百,可開13%增 |
詢價(jià) | ||
SAMSUNG/三星 |
23+ |
BGA |
3000 |
一級(jí)代理原廠VIP渠道,專注軍工、汽車、醫(yī)療、工業(yè)、 |
詢價(jià) | ||
SAMSANG |
19+ |
TSSOP |
256800 |
原廠代理渠道,每一顆芯片都可追溯原廠; |
詢價(jià) | ||
SAMSUNG |
23+ |
TSOP |
18689 |
詢價(jià) | |||
N/A |
2447 |
SMD |
100500 |
一級(jí)代理專營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長(zhǎng)期排單到貨 |
詢價(jià) | ||
SAMSUNG/三星 |
23+ |
TSOP48 |
3960 |
原裝正品代理渠道價(jià)格優(yōu)勢(shì) |
詢價(jià) |