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K9F2G08U0A-I中文資料三星數(shù)據(jù)手冊PDF規(guī)格書

K9F2G08U0A-I
廠商型號

K9F2G08U0A-I

功能描述

FLASH MEMORY

文件大小

999.07 Kbytes

頁面數(shù)量

44

生產(chǎn)廠商 Samsung semiconductor
企業(yè)簡稱

Samsung三星

中文名稱

三星半導(dǎo)體官網(wǎng)

原廠標(biāo)識
數(shù)據(jù)手冊

下載地址一下載地址二到原廠下載

更新時(shí)間

2025-1-23 22:58:00

K9F2G08U0A-I規(guī)格書詳情

GENERAL DESCRIPTION

Offered in 256Mx8bit, the K9F2G08X0A is a 2G-bit NAND Flash Memory with spare 64M-bit. Its NAND cell provides the most cost effective solution for the solid state application market. A program operation can be performed in typical 200μs on the (2K+64)Byte page and an erase operation can be performed in typical 1.5ms on a (128K+4K)Byte block. Data in the data register can be read out at 25ns(42ns with 1.8V device) cycle time per Byte. The I/O pins serve as the ports for address and data input/output as well as command input. The on-chip write controller automates all program and erase functions including pulse repetition, where required, and internal verification and margining of data. Even the write-intensive systems can take advantage of the K9F2G08X0A′s extended reliability of 100K program/erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The K9F2G08X0A is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable applications requiring non-volatility.

FEATURES

? Voltage Supply

- 1.65V ~ 1.95V

- 2.70V ~ 3.60V

? Organization

- Memory Cell Array : (256M + 8M) x 8bit

- Data Register : (2K + 64) x 8bit

? Automatic Program and Erase

- Page Program : (2K + 64)Byte

- Block Erase : (128K + 4K)Byte

? Page Read Operation

- Page Size : (2K + 64)Byte

- Random Read : 25μs(Max.)

- Serial Access : 25ns(Min.)

(*K9F2G08R0A: tRC = 42ns(Min))

? Fast Write Cycle Time

- Page Program time : 200μs(Typ.)

- Block Erase Time : 1.5ms(Typ.)

? Command/Address/Data Multiplexed I/O Port

? Hardware Data Protection

- Program/Erase Lockout During Power Transitions

? Reliable CMOS Floating-Gate Technology

-Endurance : 100K Program/Erase Cycles(with 1bit/512Byte

ECC)

- Data Retention : 10 Years

? Command Driven Operation

? Intelligent Copy-Back with internal 1bit/528Byte EDC

? Unique ID for Copyright Protection

? Package :

- K9F2G08R0A-JCB0/JIB0 : Pb-FREE PACKAGE

63 - Ball FBGA I (10 x 13 / 0.8 mm pitch)

- K9F2G08U0A-PCB0/PIB0 : Pb-FREE PACKAGE

48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)

- K9F2G08U0A-ICB0/IIB0

52 - Pin ULGA (12 x 17 / 1.00 mm pitch)

產(chǎn)品屬性

  • 型號:

    K9F2G08U0A-I

  • 制造商:

    SAMSUNG

  • 制造商全稱:

    Samsung semiconductor

  • 功能描述:

    FLASH MEMORY

供應(yīng)商 型號 品牌 批號 封裝 庫存 備注 價(jià)格
SAMSUNG
2016+
TSOP48
1980
只做原裝,假一罰十,公司可開17%增值稅發(fā)票!
詢價(jià)
SAMSUNG
2020+
LGA53
80000
只做自己庫存,全新原裝進(jìn)口正品假一賠百,可開13%增
詢價(jià)
SAMSUNG
23+
TSOP48
20000
原廠原裝正品現(xiàn)貨
詢價(jià)
SAMSUNG
2016+
TSOP48
6523
只做進(jìn)口原裝現(xiàn)貨!假一賠十!
詢價(jià)
SAMSUNG
23+
TSOP
18689
詢價(jià)
SAMSUNG
24+
N/A
5000
全新原裝正品,現(xiàn)貨銷售
詢價(jià)
SAMSUNG
589220
16余年資質(zhì) 絕對原盒原盤 更多數(shù)量
詢價(jià)
SAMSUNG
24+
SOP
30617
三星閃存專營品牌店全新原裝熱賣
詢價(jià)
SAMSUNG
TSSOP
510
正品原裝--自家現(xiàn)貨-實(shí)單可談
詢價(jià)
K9F2G08U0A-IIB0T00
216
216
詢價(jià)