首頁(yè)>K9G4G08B0A>規(guī)格書詳情

K9G4G08B0A中文資料三星數(shù)據(jù)手冊(cè)PDF規(guī)格書

K9G4G08B0A
廠商型號(hào)

K9G4G08B0A

功能描述

512M x 8 Bit / 1G x 8 Bit NAND Flash Memory

文件大小

730.35 Kbytes

頁(yè)面數(shù)量

44 頁(yè)

生產(chǎn)廠商 Samsung semiconductor
企業(yè)簡(jiǎn)稱

Samsung三星

中文名稱

三星半導(dǎo)體官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠下載

更新時(shí)間

2025-1-21 23:00:00

K9G4G08B0A規(guī)格書詳情

GENERAL DESCRIPTION

Offered in 512Mx8bit, the K9G4G08X0A is a 4G-bit NAND Flash Memory with spare 128M-bit. The device is offered in 2.7V and 3.3V Vcc. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. A program operation can be per formed in typical 800μs on the 2,112-byte page and an erase operation can be performed in typical 1.5ms on a (256K+8K)byte block.

FEATURES

?Voltage Supply

- 2.7V Device(K9G4G08B0A) : 2.5V ~ 2.9V

- 3.3V Device(K9G4G08U0A) : 2.7V ~ 3.6V

?Organization

- Memory Cell Array : (512M + 16M) x 8bit

- Data Register : (2K + 64) x 8bit

?Automatic Program and Erase

- Page Program : (2K + 64)Byte

- Block Erase : (256K + 8K)Byte

?Page Read Operation

- Page Size : (2K + 64)Byte

- Random Read : 60μs(Max.)

- Serial Access : 30ns(Min.)

?Memory Cell : 2bit / Memory Cell

512M x 8 Bit / 1G x 8 Bit NAND Flash Memory

?Fast Write Cycle Time

- Program time : 800μs(Typ.)

- Block Erase Time : 1.5ms(Typ.)

?Command/Address/Data Multiplexed I/O Port

?Hardware Data Protection

- Program/Erase Lockout During Power Transitions

?Reliable CMOS Floating-Gate Technology

- Endurance : 5K Program/Erase Cycles(with 4bit/512byte ECC)

- Data Retention : 10 Years

?Command Register Operation

?Unique ID for Copyright Protection

?Package :

- K9G4G08U0A-PCB0/PIB0 : Pb-FREE PACKAGE

48 - Pin TSOP1(12 x 20 / 0.5 mm pitch)

- K9G4G08U0A-ICB0/IIB0

52 - Pin ULGA (12 x 17 / 1.00 mm pitch)

- K9L8G08U1A-ICB0/IIB0

52 - Pin ULGA (12 x 17 / 1.00 mm pitch)

- K9G4G08B0A : MCP(TBD)

產(chǎn)品屬性

  • 型號(hào):

    K9G4G08B0A

  • 制造商:

    SAMSUNG

  • 制造商全稱:

    Samsung semiconductor

  • 功能描述:

    Preliminary FLASH MEMORY

供應(yīng)商 型號(hào) 品牌 批號(hào) 封裝 庫(kù)存 備注 價(jià)格
SAMSUNG/三星
23+
NA/
149
優(yōu)勢(shì)代理渠道,原裝正品,可全系列訂貨開增值稅票
詢價(jià)
SAMSUNG/三星
19+
TSOP
13625
進(jìn)口原裝現(xiàn)貨
詢價(jià)
SAMSUNG
2016+
TSOP48
500
只做原裝,假一罰十,公司優(yōu)勢(shì)內(nèi)存型號(hào)!
詢價(jià)
SAMSUNG
2020+
TSOP
80000
只做自己庫(kù)存,全新原裝進(jìn)口正品假一賠百,可開13%增
詢價(jià)
SAMSUNG
24+
BGA
35200
一級(jí)代理/放心采購(gòu)
詢價(jià)
SAMSUNG
23+
TSOP
20000
原廠原裝正品現(xiàn)貨
詢價(jià)
SAMSUNG
06+
TSOP
3912
一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
詢價(jià)
SAMSUNG/三星
0810+0813+
TSOP
13032
只做原廠原裝,認(rèn)準(zhǔn)寶芯創(chuàng)配單專家
詢價(jià)
SAMSUNG
22+23+
TSOP
38629
絕對(duì)原裝正品全新進(jìn)口深圳現(xiàn)貨
詢價(jià)
SAMSUNG(三星)
23+
NA
20094
正納10年以上分銷經(jīng)驗(yàn)原裝進(jìn)口正品做服務(wù)做口碑有支持
詢價(jià)