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K9K8G08U1M中文資料三星數(shù)據(jù)手冊(cè)PDF規(guī)格書

K9K8G08U1M
廠商型號(hào)

K9K8G08U1M

功能描述

512M x 8 Bits / 1G x 8 Bits NAND Flash Memory

文件大小

1.07698 Mbytes

頁面數(shù)量

41

生產(chǎn)廠商 Samsung semiconductor
企業(yè)簡(jiǎn)稱

Samsung三星

中文名稱

三星半導(dǎo)體官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠下載

更新時(shí)間

2024-11-15 11:52:00

K9K8G08U1M規(guī)格書詳情

GENERAL DESCRIPTION

Offered in 512Mx8bit, the K9F4G08U0M is a 4G-bit NAND Flash Memory with spare 128M-bit. Its NAND cell provides the most costeffective solution for the solid state application market. A program operation can be performed in typical 200μs on the (2K+64)Byte page and an erase operation can be performed in typical 1.5ms on a (128K+4K)Byte block. Data in the data page can be read out at 25ns cycle time per Byte. The I/O pins serve as the ports for address and data input/output as well as command input. The on-chip write controller automates all program and erase functions including pulse repetition, where required, and internal verification and margining of data. Even the write-intensive systems can take advantage of the K9F4G08U0M′s extended reliability of 100K program/erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The K9F4G08U0M is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable applications requiring non-volatility.

FEATURES

? Voltage Supply

- 2.70V ~ 3.60V

? Organization

- Memory Cell Array : (512M + 16,384K)bit x 8bit

- Data Register : (2K + 64)bit x 8bit

? Automatic Program and Erase

- Page Program : (2K + 64)Byte

- Block Erase : (128K + 4K)Byte

? Page Read Operation

- Page Size : (2K + 64)Byte

- Random Read : 20μs(Max.)

- Serial Access : 25ns(Min.)

? Fast Write Cycle Time

- Page Program time : 200μs(Typ.)

- Block Erase Time : 1.5ms(Typ.)

? Command/Address/Data Multiplexed I/O Port

? Hardware Data Protection

- Program/Erase Lockout During Power Transitions

? Reliable CMOS Floating-Gate Technology

- Endurance : 100K Program/Erase Cycles

- Data Retention : 10 Years

? Command Driven Operation

? Intelligent Copy-Back with internal 1bit/528Byte EDC

? Unique ID for Copyright Protection

? Package :

- K9F4G08U0M-YCB0/YIB0 48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)

- K9F4G08U0M-PCB0/PIB0 : Pb-FREE PACKAGE 48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)

- K9F4G08U0M-ICB0/IIB0 52 - Pin ULGA (12 x 17 / 1.00 mm pitch)

- K9K8G08U1M-ICB0/IIB0 52 - Pin ULGA (12 x 17 / 1.00 mm pitch)

產(chǎn)品屬性

  • 型號(hào):

    K9K8G08U1M

  • 制造商:

    SAMSUNG

  • 制造商全稱:

    Samsung semiconductor

  • 功能描述:

    512M x 8 Bits/1G x 8 Bits NAND Flash Memory

供應(yīng)商 型號(hào) 品牌 批號(hào) 封裝 庫存 備注 價(jià)格
SAM
6000
面議
19
TSOP
詢價(jià)
SAMSUNG
18+
TSOP
85600
保證進(jìn)口原裝可開17%增值稅發(fā)票
詢價(jià)
SAMG
22+
TSOP
4500
原裝正品!公司現(xiàn)貨!歡迎來電!
詢價(jià)
SAMSUNG
23+
TSSOP48
3700
絕對(duì)全新原裝!現(xiàn)貨!特價(jià)!請(qǐng)放心訂購!
詢價(jià)
SAMSUNG
2020+
TSOP48
80000
只做自己庫存,全新原裝進(jìn)口正品假一賠百,可開13%增
詢價(jià)
SAMAUNG
23+
TSOP48
13000
原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種
詢價(jià)
SAM
23+
RSOP
3580
全新原裝假一賠十
詢價(jià)
SAMSANG
19+
TSOP
256800
原廠代理渠道,每一顆芯片都可追溯原廠;
詢價(jià)
SAMSUNG/三星
22+
TSOP
6852
只做原裝正品現(xiàn)貨!或訂貨假一賠十!
詢價(jià)
Samsung
23+
TSSOP-48
8000
只做原裝現(xiàn)貨
詢價(jià)