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KB817CD

GENERALPURPOSEHIGHISOLATIONVOLTAGESINGLETRANSISTORTYPEPHOTOCOUPLERSERIES

DESCRIPTION 1.TheKB817(1-channel)isopticallycoupledisolatorscontainingaGaASlightemittingdiodeandanNPNsiliconphototransistor. 2.Theleadpitchis2.54mm. 3.Solidinsulationthicknessbetweenemittingdiodeandoutputphototransistor:>=0.6mm. FEATURES 1.Highisolationvolta

KingbrightKingbright Company LLC

今臺電子今臺電子股份有限公司

KB817CD-B

GENERALPURPOSEHIGHISOLATIONVOLTAGESINGLETRANSISTORTYPEPHOTOCOUPLERSERIES

DESCRIPTION 1.TheKB817-B(1-channel)isopticallycoupledisolatorscontainingaGaASlightemittingdiodeandanNPNsiliconphototransistor. 2.Theleadpitchis2.54mm. 3.Solidinsulationthicknessbetweenemittingdiodeandoutputphototransistor:>=0.6mm. FEATURES 1.Leadforming(gull

KingbrightKingbright Company LLC

今臺電子今臺電子股份有限公司

KB817D

GENERALPURPOSEHIGHISOLATIONVOLTAGESINGLETRANSISTORTYPEPHOTOCOUPLERSERIES

DESCRIPTION 1.TheKB817(1-channel)isopticallycoupledisolatorscontainingaGaASlightemittingdiodeandanNPNsiliconphototransistor. 2.Theleadpitchis2.54mm. 3.Solidinsulationthicknessbetweenemittingdiodeandoutputphototransistor:>=0.6mm. FEATURES 1.Highisolationvolta

KingbrightKingbright Company LLC

今臺電子今臺電子股份有限公司

KB817D-B

GENERALPURPOSEHIGHISOLATIONVOLTAGESINGLETRANSISTORTYPEPHOTOCOUPLERSERIES

DESCRIPTION 1.TheKB817-B(1-channel)isopticallycoupledisolatorscontainingaGaASlightemittingdiodeandanNPNsiliconphototransistor. 2.Theleadpitchis2.54mm. 3.Solidinsulationthicknessbetweenemittingdiodeandoutputphototransistor:>=0.6mm. FEATURES 1.Leadforming(gull

KingbrightKingbright Company LLC

今臺電子今臺電子股份有限公司

KB817L

GENERALPURPOSEHIGHISOLATIONVOLTAGESINGLETRANSISTORTYPEPHOTOCOUPLERSERIES

DESCRIPTION 1.TheKB817(1-channel)isopticallycoupledisolatorscontainingaGaASlightemittingdiodeandanNPNsiliconphototransistor. 2.Theleadpitchis2.54mm. 3.Solidinsulationthicknessbetweenemittingdiodeandoutputphototransistor:>=0.6mm. FEATURES 1.Highisolationvolta

KingbrightKingbright Company LLC

今臺電子今臺電子股份有限公司

KB817L-B

GENERALPURPOSEHIGHISOLATIONVOLTAGESINGLETRANSISTORTYPEPHOTOCOUPLERSERIES

DESCRIPTION 1.TheKB817-B(1-channel)isopticallycoupledisolatorscontainingaGaASlightemittingdiodeandanNPNsiliconphototransistor. 2.Theleadpitchis2.54mm. 3.Solidinsulationthicknessbetweenemittingdiodeandoutputphototransistor:>=0.6mm. FEATURES 1.Leadforming(gull

KingbrightKingbright Company LLC

今臺電子今臺電子股份有限公司

KC817

NPNSiliconAFTransistors

Features ●ForgeneralAFapplications. ●Highcollectorcurrent. ●Highcurrentgain. ●Lowcollector-emittersaturationvoltage.

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實業(yè)有限公司

KC817A

NPNSiliconAFTransistors

Features ●ForgeneralAFapplications. ●Highcollectorcurrent. ●Highcurrentgain. ●Lowcollector-emittersaturationvoltage.

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實業(yè)有限公司

KC817W

NPNSiliconAFTransistors

■Features ●ForGeneralAFApplications ●HighCollectorCurrent ●HighCurrentGain ●LowCollector-EmitterSaturationVoltage ●ComplementarytoBC807W

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實業(yè)有限公司

KPC817

SEMICONDUCTOR

KECKEC CORPORATION

KEC株式會社

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