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KF4N20LW

N CHANNEL MOS FIELD EFFECT TRANSISTOR

GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.ItismainlysuitableforLEDLightingandswitchingmodepowersupplies. FEATURES ?VDSS(Min.)=200V,ID=1A ?Dra

KECKEC CORPORATION

KEC株式會(huì)社

KF4N20LW_15

N CHANNEL MOS FIELD EFFECT TRANSISTOR

KECKEC CORPORATION

KEC株式會(huì)社

KSMD4N20

200VN-CHANNELMOSFET

KERSEMI

Kersemi Electronic Co., Ltd.

KSMU4N20

200VN-CHANNELMOSFET

KERSEMI

Kersemi Electronic Co., Ltd.

MDD4N20Y

N-ChannelMOSFET200V,3.0A,1.35(ohm)

MGCHIP

MagnaChip Semiconductor.

MDD4N20YRH

N-ChannelMOSFET200V,3.0A,1.35(ohm)

MGCHIP

MagnaChip Semiconductor.

MDD4N20YRH

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=3A@TC=25℃ ·DrainSourceVoltage :VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.35Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

MDHT4N20Y

N-ChannelMOSFET200V,0.85A,1.35(ohm)

MGCHIP

MagnaChip Semiconductor.

MDHT4N20YURH

N-ChannelMOSFET200V,0.85A,1.35(ohm)

MGCHIP

MagnaChip Semiconductor.

MTD4N20D

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=4A@TC=25℃ ·DrainSourceVoltage- :VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.7Ω(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconverter,p

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

MTD4N20E

N??hannelDPAKPowerMOSFET

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MTD4N20E

TMOSPOWERFET4.0AMPERES200VOLTSRDS(on)=1.2OHM

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTD4N20I

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=4A@TC=25℃ ·DrainSourceVoltage- :VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.7Ω(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconverter,p

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

NDT4N20L

N-ChannelMOSFET

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實(shí)業(yè)有限公司

P4N20

N-CHANNEL200V-1.3ohm-4ATO-220POWERMOSTRANSISTOR

N-CHANNEL200V-1.3?-4ATO-220POWERMOSTRANSISTOR ■TYPICALRDS(on)=1.3? ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■LOWGATECHARGE ■HIGHCURRENTCAPABILITY ■150oCOPERATINGTEMPERATURE ■APPLICATIONORIENTEDCHARACTERIZATION APPLICATIONS ■HIGHCURRENT,HIGHSPE

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STD4N20

N-CHANNEL200V-1.2ohm-4ADPAK/IPAKMESHOVERLAY??MOSFET

DESCRIPTION UsingthelatesthighvoltageMESHOVERLAY?process,STMicroelectronicshasdesignedanadvancedfamilyofpowerMOSFETswithoutstandingperformance.ThenewpatentedSTriplayoutcoupledwiththeCompany’sproprietaryedgeterminationstructure,makesitsuitableincovertersforli

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STP4N20

N-CHANNEL200V-1.3ohm-4ATO-220POWERMOSTRANSISTOR

N-CHANNEL200V-1.3?-4ATO-220POWERMOSTRANSISTOR ■TYPICALRDS(on)=1.3? ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■LOWGATECHARGE ■HIGHCURRENTCAPABILITY ■150oCOPERATINGTEMPERATURE ■APPLICATIONORIENTEDCHARACTERIZATION APPLICATIONS ■HIGHCURRENT,HIGHSPE

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

UF4N20

4A,200VN-CHANNELPOWERMOSFET

UTCUnisonic Technologies

友順友順科技股份有限公司

UF4N20Z

4A,200VN-CHANNELPOWERMOSFET

UTCUnisonic Technologies

友順友順科技股份有限公司

詳細(xì)參數(shù)

  • 型號(hào):

    KF4N20LW

  • 制造商:

    KEC

  • 制造商全稱:

    KEC(Korea Electronics)

  • 功能描述:

    N CHANNEL MOS FIELD EFFECT TRANSISTOR

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KEC
23+
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15000
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KEC
2022+
SOT-223
32500
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89630
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KEC
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30000
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KEC
16+
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K
24+
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5000
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KEC
2020+
SOT223
350000
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KEC
1815+
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6528
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更多KF4N20LW供應(yīng)商 更新時(shí)間2024-12-23 16:51:00