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KF9N50P

N CHANNEL MOS FIELD EFFECT TRANSISTOR

GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.Itismainlysuitableforelectronicballastandswitchingmodepowersupplies. FEATURES ?VDSS(Min.)=500V,ID=9A

KECKEC CORPORATION

KEC株式會(huì)社

KF9N50P_15

N CHANNEL MOS FIELD EFFECT TRANSISTOR

KECKEC CORPORATION

KEC株式會(huì)社

KQB9N50

500VN-ChannelMOSFET

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實(shí)業(yè)有限公司

KSM9N50C

500VN-ChannelMOSFET

KERSEMI

Kersemi Electronic Co., Ltd.

KSMF9N50CF

500VN-ChannelMOSFET

KERSEMI

Kersemi Electronic Co., Ltd.

MDF9N50

N-ChannelMOSFET500V,9.0A,0.85(ohm)

TheMDF9N50usesadvancedMagnaChip’sMOSFETTechnology,whichprovideslowon-stateresistance,highswitchingperformanceandexcellentquality. MDF9N50issuitabledeviceforSMPS,highSpeedswitchingandgeneralpurposeapplications.

MGCHIP

MagnaChip Semiconductor.

MDF9N50BTH

N-ChannelMOSFET500V,9.0A,0.85(ohm)

MGCHIP

MagnaChip Semiconductor.

MDF9N50BTH

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

MDF9N50F

N-ChannelMOSFET500V,8.0A,0.97ohm

MGCHIP

MagnaChip Semiconductor.

MDF9N50TH

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=9A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.85Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

MDF9N50TH

N-ChannelMOSFET500V,9.0A,0.85(ohm)

TheMDF9N50usesadvancedMagnaChip’sMOSFETTechnology,whichprovideslowon-stateresistance,highswitchingperformanceandexcellentquality. MDF9N50issuitabledeviceforSMPS,highSpeedswitchingandgeneralpurposeapplications.

MGCHIP

MagnaChip Semiconductor.

MDP9N50

N-ChannelMOSFET500V,9.0A,0.85(ohm)

MGCHIP

MagnaChip Semiconductor.

MDP9N50B

N-ChannelMOSFET500V,9.0A,0.85(ohm)

MGCHIP

MagnaChip Semiconductor.

MDP9N50BTH

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=9A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.85Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

MDP9N50BTH

N-ChannelMOSFET500V,9.0A,0.85(ohm)

MGCHIP

MagnaChip Semiconductor.

MDP9N50F

N-ChannelMOSFET500V,8.0A,0.97ohm

MGCHIP

MagnaChip Semiconductor.

MDP9N50TH

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=9A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.85Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

MDP9N50TH

N-ChannelMOSFET500V,9.0A,0.85(ohm)

MGCHIP

MagnaChip Semiconductor.

MTN9N50BFP

N-ChannelEnhancementModePowerMOSFET

CYSTEKECCystech Electonics Corp.

全宇昕科技全宇昕科技股份有限公司

MTN9N50FP

N-ChannelEnhancementModePowerMOSFET

CYSTEKECCystech Electonics Corp.

全宇昕科技全宇昕科技股份有限公司

詳細(xì)參數(shù)

  • 型號(hào):

    KF9N50P

  • 制造商:

    KEC

  • 制造商全稱:

    KEC(Korea Electronics)

  • 功能描述:

    N CHANNEL MOS FIELD EFFECT TRANSISTOR

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
KEC
19+
TO-220AB
7500
KEC一級(jí)代理 原裝正品長(zhǎng)期供貨
詢價(jià)
K
23+
TO220AB
10000
公司只做原裝正品
詢價(jià)
KEC
2022+
TO-220
32500
原廠代理 終端免費(fèi)提供樣品
詢價(jià)
KEC
23+
TO-220
6000
原裝正品,支持實(shí)單
詢價(jià)
KEC
2022+
TO-220
30000
進(jìn)口原裝現(xiàn)貨供應(yīng),原裝 假一罰十
詢價(jià)
KEC
20+
TO-220
32500
現(xiàn)貨很近!原廠很遠(yuǎn)!只做原裝
詢價(jià)
K
24+
TOTO-220AB
12300
獨(dú)立分銷商 公司只做原裝 誠(chéng)心經(jīng)營(yíng) 免費(fèi)試樣正品保證
詢價(jià)
KEC
2023+
TO-220
25000
AI智能識(shí)別、工業(yè)、汽車、醫(yī)療方案LPC批量及配套一站
詢價(jià)
SOT-23
7771
一級(jí)代理 原裝正品假一罰十價(jià)格優(yōu)勢(shì)長(zhǎng)期供貨
詢價(jià)
EMC
15+
3000
只做原裝假一罰十
詢價(jià)
更多KF9N50P供應(yīng)商 更新時(shí)間2024-11-6 12:12:00