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KSM13N50

AdvancedhighcelldenitytrenchtechnologyforultraRDS(ON)

KERSEMI

Kersemi Electronic Co., Ltd.

KSM13N50C

500VN-ChannelMOSFET

KERSEMI

Kersemi Electronic Co., Ltd.

MDF13N50

N-ChannelMOSFET500V,13.0A,0.5(ohm)

MGCHIP

MagnaChip Semiconductor.

MDF13N50B

N-ChannelMOSFET500V,13.0A,0.5(ohm)

MGCHIP

MagnaChip Semiconductor.

MDF13N50BTH

N-ChannelMOSFET500V,13.0A,0.5(ohm)

MGCHIP

MagnaChip Semiconductor.

MDF13N50BTH

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=13A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.5Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MDF13N50G

N-ChannelMOSFET500V,13.0A,0.5(ohm)

MGCHIP

MagnaChip Semiconductor.

MDF13N50GTH

N-ChannelMOSFET500V,13.0A,0.5(ohm)

MGCHIP

MagnaChip Semiconductor.

MDF13N50GTH

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=13A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.5Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MDF13N50TH

N-ChannelMOSFET500V,13.0A,0.5(ohm)

MGCHIP

MagnaChip Semiconductor.

MDF13N50TH

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=13A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.5Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MDFS13N50G

N-ChannelMOSFET500V,13.0A,0.5(ohm)

MGCHIP

MagnaChip Semiconductor.

MDFS13N50GTH

N-ChannelMOSFET500V,13.0A,0.5(ohm)

MGCHIP

MagnaChip Semiconductor.

MDFS13N50GTH

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=12A@TC=25℃ ·DrainSourceVoltage :VDSS=650V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.65Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MDP13N50

N-ChannelMOSFET500V,13.0A,0.5(ohm)

GeneralDescription TheMDP13N50usesadvancedMagnachip’sMOSFETTechnology,whichprovideslowonstateresistance,highswitchingperformanceandexcellentquality.MDP13N50issuitabledeviceforSMPS,HIDandgeneralpurposeapplications. Features ■VDS=500V ■ID=13.0A@VGS=10V ■R

MGCHIP

MagnaChip Semiconductor.

MDP13N50B

N-ChannelMOSFET500V,13.0A,0.5(ohm)

MGCHIP

MagnaChip Semiconductor.

MDP13N50BTH

N-ChannelMOSFET500V,13.0A,0.5(ohm)

MGCHIP

MagnaChip Semiconductor.

MDP13N50BTH

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=13A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.5Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MDP13N50G

N-ChannelMOSFET500V,13.0A,0.5(ohm)

MGCHIP

MagnaChip Semiconductor.

MDP13N50GTH

N-ChannelMOSFET500V,13.0A,0.5(ohm)

MGCHIP

MagnaChip Semiconductor.

供應(yīng)商型號品牌批號封裝庫存備注價格
KIA
23+24
TO-220F
16970
專業(yè)經(jīng)營各種場效應(yīng)管、三極管、IGBT、可控硅、穩(wěn)壓IC
詢價
KIA
23+
SOT23
30000
代理全新原裝現(xiàn)貨,價格優(yōu)勢
詢價
KIA
03+
SOT23
2000
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
詢價
CJ
2022+
SOT89
6000
一級代理/分銷渠道價格優(yōu)勢 十年芯程一路只做原裝正品
詢價
KIA
23+
SOT23
2000
全新原裝正品現(xiàn)貨,支持訂貨
詢價
KIA
23+
原裝正品現(xiàn)貨
10000
SOT23
詢價
ROHS
23+
13000
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
詢價
KEC
24+
SOT23
5000
全現(xiàn)原裝公司現(xiàn)貨
詢價
KEC
17PB
SOT-23
3000
現(xiàn)貨
詢價
KEC
21+
SOT-23
10000
原裝現(xiàn)貨假一罰十
詢價
更多KIA13N50HF供應(yīng)商 更新時間2025-1-10 14:49:00