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KMM366S1623CT-G8中文資料三星數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

KMM366S1623CT-G8
廠商型號(hào)

KMM366S1623CT-G8

功能描述

PC100 SDRAM MODULE Preliminary

文件大小

151.64 Kbytes

頁(yè)面數(shù)量

10 頁(yè)

生產(chǎn)廠商 Samsung semiconductor
企業(yè)簡(jiǎn)稱

Samsung三星

中文名稱

三星半導(dǎo)體官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

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更新時(shí)間

2025-1-27 16:20:00

KMM366S1623CT-G8規(guī)格書(shū)詳情

GENERAL DESCRIPTION

The Samsung KMM366S1623CT is a 16M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung KMM366S1623CT consists of sixteen CMOS 8M x 8 bit with 4banks Synchronous DRAMs in TSOP-II 400mil package and a 2K EEPROM in 8-pin TSSOP package on a 168-pin glass-epoxy substrate. Two 0.1uF decoupling capacitors are mounted on the printed circuit board in parallel for each SDRAM.

The KMM366S1623CT is a Dual In-line Memory Module and is intended for mounting into 168-pin edge connector sockets.

Synchronous design allows precise cycle control with the use of system clock. I/O transactions are possible on every clock cycle.

Range of operating frequencies, programmable latencies allows the same device to be useful for a variety of high bandwidth, high performance memory system applications.

FEATURE

? Performance range

? Burst mode operation

? Auto & self refresh capability (4096 Cycles/64ms)

? LVTTL compatible inputs and outputs

? Single 3.3V ± 0.3V power supply

? MRS cycle with address key programs

Latency (Access from column address)

Burst length (1, 2, 4, 8 & Full page)

Data scramble (Sequential & Interleave)

? All inputs are sampled at the positive going edge of the

system clock

? Serial presence detect with EEPROM

? PCB : Height (1,375mil), double sided component

產(chǎn)品屬性

  • 型號(hào):

    KMM366S1623CT-G8

  • 制造商:

    SAMSUNG

  • 制造商全稱:

    Samsung semiconductor

  • 功能描述:

    PC100 SDRAM MODULE Preliminary

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