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KSR2105

PNP(SWITCHINGAPPLICATION)

SWITCHINGAPPLICATION(BiasResistorBuiltIn) ?Switchingcircuit,Inverter,Interfacecircuit,Drivercircuit ?BuiltinbiasResistor(R1=4.7K?,R2=10K?) ?ComplementtoKSR1105

SamsungSamsung semiconductor

三星三星半導(dǎo)體

KSV2105

GLASS-LEADEDGENERALPURPOSEABRUPTVARACTORDIODES

P/NCAPACITANCE KSV21016.8 KSV21028.2 KSV210310.0 KSV210412.0 KSV210515.0 KSV210618.0 KSV210722.0 KSV210827.0 KSV210933.0 KSV211039.0 KSV211147.0 KSV211256.0 KSV211368.0 KSV211482.0 KSV2115100.0

KNOX

Knox Semiconductor, Inc

LM2105

LM2105105-V,0.5-A/0.8-AHalf-BridgeDriverwith5-VUVLOandIntegratedBootstrapDiode

1Features ?DrivestwoN-channelMOSFETsinhalf-bridge configuration ?Integratedbootstrapdiode ?5-VtypicalundervoltagelockoutonGVDD ?105-VmaximumrecommendedvoltageonBST ?–19.5-Vabsolutemaximumnegativetransient voltagehandlingonSH ?0.5-A/0.8-Apeaksource/sinkcurr

TITexas Instruments

德州儀器美國(guó)德州儀器公司

LM2105

LM2105105-V,0.5-A,0.8-AHalf-BridgeDriverwith5-VUVLOandIntegratedBootstrapDiode

1Features ?DrivestwoN-channelMOSFETsinhalf-bridge configuration ?Integratedbootstrapdiode ?5-VtypicalundervoltagelockoutonGVDD ?105-VmaximumrecommendedvoltageonBST ?–19.5-Vabsolutemaximumnegativetransient voltagehandlingonSH ?0.5-A/0.8-Apeaksource/sinkcurr

TITexas Instruments

德州儀器美國(guó)德州儀器公司

LM2105

LM2105107-V,0.5-A,0.8-AHalf-BridgeDriverwith5-VUVLOandIntegratedBootstrapDiode

1Features ?DrivestwoN-channelMOSFETsinhalf-bridge configuration ?Integratedbootstrapdiode ?5-VtypicalundervoltagelockoutonGVDD ?107-VabsolutemaximumvoltageonBST ?–19.5-Vabsolutemaximumnegativetransient voltagehandlingonSH ?0.5-A/0.8-Apeaksource/sinkcurrent

TITexas Instruments

德州儀器美國(guó)德州儀器公司

LM2105DR

LM2105105-V,0.5-A,0.8-AHalf-BridgeDriverwith5-VUVLOandIntegratedBootstrapDiode

1Features ?DrivestwoN-channelMOSFETsinhalf-bridge configuration ?Integratedbootstrapdiode ?5-VtypicalundervoltagelockoutonGVDD ?105-VmaximumrecommendedvoltageonBST ?–19.5-Vabsolutemaximumnegativetransient voltagehandlingonSH ?0.5-A/0.8-Apeaksource/sinkcurr

TITexas Instruments

德州儀器美國(guó)德州儀器公司

LM2105DR

LM2105107-V,0.5-A,0.8-AHalf-BridgeDriverwith5-VUVLOandIntegratedBootstrapDiode

1Features ?DrivestwoN-channelMOSFETsinhalf-bridge configuration ?Integratedbootstrapdiode ?5-VtypicalundervoltagelockoutonGVDD ?107-VabsolutemaximumvoltageonBST ?–19.5-Vabsolutemaximumnegativetransient voltagehandlingonSH ?0.5-A/0.8-Apeaksource/sinkcurrent

TITexas Instruments

德州儀器美國(guó)德州儀器公司

LM2105DSGR

LM2105107-V,0.5-A,0.8-AHalf-BridgeDriverwith5-VUVLOandIntegratedBootstrapDiode

1Features ?DrivestwoN-channelMOSFETsinhalf-bridge configuration ?Integratedbootstrapdiode ?5-VtypicalundervoltagelockoutonGVDD ?107-VabsolutemaximumvoltageonBST ?–19.5-Vabsolutemaximumnegativetransient voltagehandlingonSH ?0.5-A/0.8-Apeaksource/sinkcurrent

TITexas Instruments

德州儀器美國(guó)德州儀器公司

LPA2105

Filterless6WClass-DMonoAudioAmplifier

POWERLowpower Semiconductor inc

微源半導(dǎo)體微源半導(dǎo)體股份有限公司

LPC2105

Single-chip32-bitmicrocontrollers;128kBISP/IAPFlashwith64kB/32kB/16kBRAM

Generaldescription TheLPC2104,2105and2106arebasedona16/32bitARM7TDMI-SCPUwithreal-timeemulationandembeddedtracesupport,togetherwith128kbytes(kB)ofembeddedhighspeedflashmemory.A128bitwidememoryinterfaceandauniqueacceleratorarchitectureenable32bitcodee

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

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更多KNUP2105供應(yīng)商 更新時(shí)間2025-1-24 8:14:00

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