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KPS11N65F

This Super Junction MOSFET has better characteristics

KECKEC CORPORATION

KEC株式會社

MDF11N65B

N-ChannelMOSFET650V,12A,0.65(ohm)

GeneralDescription TheseN-channelMOSFETareproducedusingadvancedMagnaChip’sMOSFETTechnology,whichprovideslowonstateresistance,highswitchingperformanceandexcellentquality. ThesedevicesaresuitabledeviceforSMPS,highSpeedswitchingandgeneralpurposeapplications. Feat

MGCHIP

MagnaChip Semiconductor.

MDF11N65B

N-Channel650V(D-S)PowerMOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司

MDF11N65BTH

N-ChannelMOSFET650V,12A,0.65(ohm)

GeneralDescription TheseN-channelMOSFETareproducedusingadvancedMagnaChip’sMOSFETTechnology,whichprovideslowonstateresistance,highswitchingperformanceandexcellentquality. ThesedevicesaresuitabledeviceforSMPS,highSpeedswitchingandgeneralpurposeapplications. Feat

MGCHIP

MagnaChip Semiconductor.

MDF11N65BTH

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=12A@TC=25℃ ·DrainSourceVoltage :VDSS=650V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.65Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MDFS11N65B

N-ChannelMOSFET650V,12A,0.65(ohm)

MGCHIP

MagnaChip Semiconductor.

MDFS11N65BTH

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=12A@TC=25℃ ·DrainSourceVoltage :VDSS=650V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.65Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MDFS11N65BTH

N-ChannelMOSFET650V,12A,0.65(ohm)

MGCHIP

MagnaChip Semiconductor.

NCE11N65

SuperJunctionMOSFET

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

無錫新潔能股份無錫新潔能股份有限公司

NCE11N65F

SuperJunctionMOSFET

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

無錫新潔能股份無錫新潔能股份有限公司

P11N65ZA

N-Channel650V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司

PSM11N65CT

11A650VSingleN??hannelPowerMOSFET

PFC

PFC Device Inc.

PSM11N65CTF

11A650VSingleN-ChannelPowerMOSFET

PFC

PFC Device Inc.

SIHH11N65E

ESeriesPowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHH11N65E

ESeriesPowerMOSFET

FEATURES ?Lowfigure-of-merit(FOM)RonxQg ?Lowinputcapacitance(Ciss) ?Reducedswitchingandconductionlosses ?Ultralowgatecharge(Qg) ?Avalancheenergyrated(UIS) ?Kelvinconnectionforreducedgatenoise ?Materialcategorization:fordefinitionsofcompliance pleasesee

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHH11N65EF

ESeriesPowerMOSFETwithFastBodyDiode

FEATURES ?Completelylead(Pb)-freedevice ?Lowfigure-of-merit(FOM)RonxQg ?Lowinputcapacitance(Ciss) ?Reducedswitchingandconductionlosses ?Ultralowgatecharge(Qg) ?Avalancheenergyrated(UIS) ?Kelvinconnectionforreducedgatenoise ?Materialcategorization:forde

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHH11N65EF

ESeriesPowerMOSFETwithFastBodyDiode

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SVSP11N65D

11A,650VSUPERJUNCTIONMOSPOWERTRANSISTOR

DESCRIPTION SVSP11N65D/F/S/FJD/K/TD2isanN-channelenhancementmode highvoltagepowerMOSFETsproducedusingSilan’ssuperjunction MOStechnology.Itachieveslowconductionlossandswitching losses.Itleadsthedesignengineerstotheirpowerconverterswith highefficiency,highpower

SILANSilan Microelectronics Joint-stock

士蘭微杭州士蘭微電子股份有限公司

SW11N65D

N-channelEnhancedmodeTO-220/TO-220F/TO-262MOSFET

SEMIPOWERXian Semipower Electronic Technology Co., Ltd.

芯派科技芯派科技股份有限公司

供應(yīng)商型號品牌批號封裝庫存備注價格
KEC
23+
TO-220F
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
KEC
22+
TO-220IS(1)
50000
原裝正品.假一罰十
 詢價
KEC
15+
TO-220F
28532
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
 詢價
BOURNS
2022+
DIP3
6000
一級代理/分銷渠道價格優(yōu)勢 十年芯程一路只做原裝正品
 詢價
KEC
22+
TO220F
12000
只做原裝、原廠優(yōu)勢渠道、假一賠十
 詢價
KEC
24+
TO-220IS(1)
9000
只做原裝正品 有掛有貨 假一賠十
 詢價
KEC
24+
TO220F
990000
明嘉萊只做原裝正品現(xiàn)貨
 詢價
24+
N/A
80000
一級代理-主營優(yōu)勢-實惠價格-不悔選擇
 詢價
KEC
23+
原裝正品現(xiàn)貨
10000
TO-220IS(1)
 詢價
KEC
23+
TO220F
6850
只做原廠原裝正品現(xiàn)貨!假一賠十!
 詢價
更多KPS11N65F供應(yīng)商 更新時間2025-1-12 9:00:00

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