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KPS8N60F

This Super Junction MOSFET has better characteristics

KECKEC CORPORATION

KEC株式會(huì)社

KSM8N60

AdvancedhighcelldenitytrenchtechnologyforultraRDS

KERSEMI

Kersemi Electronic Co., Ltd.

KSM8N60C

600VN-CHANNELMOSFET

KERSEMI

Kersemi Electronic Co., Ltd.

KSMB8N60

Greendeviceavailable.

KERSEMI

Kersemi Electronic Co., Ltd.

KSMF8N60

Lowgatecharge.

KERSEMI

Kersemi Electronic Co., Ltd.

KSMF8N60C

600VN-ChannelMOSFET

KERSEMI

Kersemi Electronic Co., Ltd.

KX8N60C

N-ChannelMOSFET

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實(shí)業(yè)有限公司

KX8N60CF

N-ChannelMOSFET

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實(shí)業(yè)有限公司

KX8N60F

N-ChannelMOSFET

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實(shí)業(yè)有限公司

MDF8N60

N-ChannelMOSFET600V,8A,1.0(ohm)

MGCHIP

MagnaChip Semiconductor.

MDF8N60B

N-ChannelMOSFET600V,8A,1.05(ohm)

MGCHIP

MagnaChip Semiconductor.

MDF8N60BTH

N-ChannelMOSFET600V,8A,1.05(ohm)

MGCHIP

MagnaChip Semiconductor.

MDF8N60BTH

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=8A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.05Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

MDF8N60TH

N-ChannelMOSFET600V,8A,1.0(ohm)

MGCHIP

MagnaChip Semiconductor.

MDF8N60TH

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=8A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.0Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

MDP8N60

N-ChannelMOSFET600V,8A,1.0(ohm)

MGCHIP

MagnaChip Semiconductor.

MDP8N60TH

N-ChannelMOSFET600V,8A,1.0(ohm)

MGCHIP

MagnaChip Semiconductor.

MDP8N60TH

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=8A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.0Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

MS8N60

N-ChannelEnhancementModePowerMOSFET

BWTECH

Bruckewell Technology LTD

MSF8N60

N-ChannelEnhancementModePowerMOSFET

BWTECH

Bruckewell Technology LTD

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更多KPS8N60F供應(yīng)商 更新時(shí)間2024-12-24 11:00:00