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KRC830E

EPITAXIAL PLANAR NPN TRANSISTOR (SWITCHING, INTERFACE CIRCUIT AND DRIVER CIRCUIT)

SWITCHINGAPPLICATION. INTERFACECIRCUITANDDRIVERCIRCUITAPPLICATION. FEATURES ●WithBuilt-inBiasResistors. ●SimplifyCircuitDesign. ●ReduceaQuantityofPartsandManufacturingProcess. ●HighPackingDensity.

KECKEC CORPORATION

KEC株式會社

KRC830U

EPITAXIALPLANARNPNTRANSISTOR(SWITCHING,INTERFACECIRCUITANDDRIVERCIRCUIT)

SWITCHINGAPPLICATION. INTERFACECIRCUITANDDRIVERCIRCUITAPPLICATION. FEATURES ●WithBuilt-inBiasResistors. ●SimplifyCircuitDesign. ●ReduceaQuantityofPartsandManufacturingProcess. ●HighPackingDensity.

KECKEC CORPORATION

KEC株式會社

KSM830

AdvancedhighcelldenitytrenchtechnologyforultraRDS(ON)

KERSEMI

Kersemi Electronic Co., Ltd.

KSMB830

Excellentpackageforgoodheatdissipation.

KERSEMI

Kersemi Electronic Co., Ltd.

KSMF830

Greendeviceavailable.

KERSEMI

Kersemi Electronic Co., Ltd.

KT830

SLOTTEDOPTICALSWITCHESPHOTOTRANSISTOROUTPUT

Optek

OPTEK Technologies

LED830

BlueLEDLamp

ROITHNER

Roithner LaserTechnik GmbH

LS830

ULTRALOWLEAKAGELOWDRIFTMONOLITHICDUALN-CHANNELJFET

FEATURES ULTRALOWDRIFT│ΔVGS1-2/ΔT│=5μV/oCmax. ULTRALOWNOISEIG=80fATYP. LOWNOISEen=70nV/√HzTYP. LOWCAPACITANCECISS=3pfmax.

LINEAR

Linear Integrated Systems

LS830

LinearSystemsUltraLowLeakageLowDriftMonolithicDualJFET

TheLS830isahigh-performancemonolithicdualJFETfeaturingextremelylownoise,tightoffsetvoltageandlowdriftovertemperaturespecifications,andistargetedforuseinawiderangeofprecisioninstrumentationapplications.TheLS830featuresa5-mVoffsetand10-μV/°Cdrift.The8Pin

MICROSS

Micross Components

LS830_PDIP

LinearSystemsUltraLowLeakageLowDriftMonolithicDualJFET

TheLS830isahigh-performancemonolithicdualJFETfeaturingextremelylownoise,tightoffsetvoltageandlowdriftovertemperaturespecifications,andistargetedforuseinawiderangeofprecisioninstrumentationapplications.TheLS830featuresa5-mVoffsetand10-μV/°Cdrift.The8Pin

MICROSS

Micross Components

LT830

PhotoDMOS-FETRelay

Description TheLT830isa1-FormAsolidstaterelayinan6pinDIPpackagethatemploysoptically coupledMOSFETtechnologytoprovide3750Vofinputtooutputisolation.The opticallycoupledinputiscontrolledbyahighlyefficientGaAlAsinfraredLEDand MOSFETsontheoutputside. Fe

LETEXLETEX technology corp

臺灣麗太麗太科技股份有限公司

M830

12.249Gb/sOC-192Clock&DataRecoveryTransmitterModule

ICSTChina Resources Microelectronics Limited Limited

華潤微電子華潤微電子有限公司

M830D

12.249Gb/sOC-192Clock&DataRecoveryTransmitterModule

ICSTChina Resources Microelectronics Limited Limited

華潤微電子華潤微電子有限公司

MANO830

PCIExpressMiniCardsupported

AXIOMTEKAxiomtek Co., Ltd.

艾訊科技艾訊股份有限公司

MAX830

5V/3.3V/3V/Adjustable-Output,1A,Step-Down,PWM,Switch-ModeDC-DCRegulators

GeneralDescription TheMAX830/MAX831/MAX832/MAX833aremonolithic,bipolar,pulse-width-modulation(PWM),switch-mode,stepdownDC-DCregulators.Eachisratedat1A.Veryfewexternalcomponentsareneededforstandardoperationbecausethepowerswitch,oscillator,feedback,andcontrolcircui

MaximMaxim Integrated Products

美信美信半導體

MAX830CWE

5V/3.3V/3V/Adjustable-Output,1A,Step-Down,PWM,Switch-ModeDC-DCRegulators

GeneralDescription TheMAX830/MAX831/MAX832/MAX833aremonolithic,bipolar,pulse-width-modulation(PWM),switch-mode,stepdownDC-DCregulators.Eachisratedat1A.Veryfewexternalcomponentsareneededforstandardoperationbecausethepowerswitch,oscillator,feedback,andcontrolcircui

MaximMaxim Integrated Products

美信美信半導體

MBR830

8.0ASCHOTTKYBARRIERRECTIFIER

Features ●SchottkyBarrierChip ●GuardRingDieConstructionfor TransientProtection ●LowPowerLoss,HighEfficiency ●HighSurgeCapability ●HighCurrentCapabilityandLowForward VoltageDrop ●ForUseinLowVoltage,HighFrequency Inverters,FreeWheeling,andPolarity

DIODES

Diodes Incorporated

MBR830

WideTemperatureRangeandHighTjmSchottkyBarrierRectifiers

FEATURES *Metalofsiliconrectifier,majoritycarrierconducton *Guardringfortransientprotection *Lowpowerloss,highefficiency *Highcurrentcapability,lowVF *Highsurgecapacity *Foruseinlowvoltage,highfrequencyinverters,free whelling,andpolarityprotectionapp

SIRECTIFIERSirectifier Semiconductors

矽萊克電子江蘇矽萊克電子科技有限公司

MBR830

SCHOTTKYBARRIERRECTIFIER

VOLTAGERANGE:30-100VCURRENT:8.0A FEATURES ◇Highsurgecapacity. ◇Foruseinlowvoltage,highfrequencyinverters,freewheeling,andpolarityprotectionapplications. ◇Metalsiliconjunction,majoritycarrierconduction. ◇Highcurrentcapacity,lowforwardvoltagedrop. ◇Guard

BILINChangzhou Galaxy Century Microelectronics Co.,Ltd.

銀河微電常州銀河世紀微電子股份有限公司

MBR830

SCHOTTKYBARRIERRECTIFIERS

FEATURES ●Metalofsiliconrectifier,majoritycarrierconduction ●Guardringfortransientprotection ●Lowpowerloss,highefficiency ●Highcurrentcapability,lowVF ●Highsurgecapacity ●PlasticpackagehasULflammabilityclassification94V-0 ●Foruseinlowvoltage,highfrequenc

HY

HY ELECTRONIC CORP.

詳細參數

  • 型號：

    KRC830E

  • 制造商：

    KEC

  • 制造商全稱：

    KEC(Korea Electronics)

  • 功能描述：

    EPITAXIAL PLANAR NPN TRANSISTOR(SWITCHING, INTERFACE CIRCUIT AND DRIVER CIRCUIT)

供應商型號品牌批號封裝庫存備注價格
KEC
23+
NA
19960
只做進口原裝,終端工廠免費送樣
 詢價
KEC
23+
SOT523
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
KEC
21+
SOT523
10000
原裝現(xiàn)貨假一罰十
 詢價
KEC
2022
SOT523
80000
原裝現(xiàn)貨,OEM渠道,歡迎咨詢
 詢價
KEC
SOT523
68900
原包原標簽100%進口原裝常備現(xiàn)貨!
 詢價
KEC
11
SOT523
4000
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
 詢價
KEC
23+
NA/
11500
優(yōu)勢代理渠道,原裝正品,可全系列訂貨開增值稅票
 詢價
KEC
23+
SOT523
4000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
KEC
23+
原裝正品現(xiàn)貨
10000
SOT523
 詢價
KEC
24+
SOT-363SOT-323-6
9000
新進庫存/原裝
 詢價
更多KRC830E供應商 更新時間2025-1-11 11:06:00

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