零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
KSMB4N60 | Green device available. | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | |
Excellentpackageforgoodheatdissipation. | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
600VN-ChannelMOSFET | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
Excellentpackageforgoodheatdissipation. | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
N-ChannelMOSFET | KEXINGuangdong Kexin Industrial Co.,Ltd 科信電子廣東科信實業(yè)有限公司 | KEXIN | ||
N-ChannelMOSFET | KEXINGuangdong Kexin Industrial Co.,Ltd 科信電子廣東科信實業(yè)有限公司 | KEXIN | ||
N-ChannelMOSFET600V,3.5A,2.0ohm | MGCHIP MagnaChip Semiconductor. | MGCHIP | ||
PowerMOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體(臺灣)有限公司 | VBSEMI | ||
N-ChannelMOSFET600V,3.5A,2.0ohm | MGCHIP MagnaChip Semiconductor. | MGCHIP | ||
N-ChannelMOSFET600V,3.5A,2.0? GeneralDescription TheseN-channelMOSFETareproducedusingadvanced MagnaChip’sMOSFETTechnology,whichprovideslowonstateresistance,highswitchingperformanceandexcellent quality. ThesedevicesaresuitabledeviceforSMPS,highSpeed switchingandgeneralpurposeapplications. | MGCHIP MagnaChip Semiconductor. | MGCHIP | ||
N-Channel650V(D-S)PowerMOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體(臺灣)有限公司 | VBSEMI | ||
N-Channel650V(D-S)PowerMOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體(臺灣)有限公司 | VBSEMI | ||
N-ChannelMOSFET600V,3.5A,2.0ohm | MGCHIP MagnaChip Semiconductor. | MGCHIP | ||
N-Channel650V(D-S)PowerMOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體(臺灣)有限公司 | VBSEMI | ||
N-Channel650V(D-S)PowerMOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體(臺灣)有限公司 | VBSEMI | ||
N-Channel650V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體(臺灣)有限公司 | VBSEMI | ||
PowerMOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體(臺灣)有限公司 | VBSEMI | ||
InsulatedGateBipolarTransistor InsulatedGateBipolarTransistor N–ChannelEnhancement–ModeSiliconGate ThisInsulatedGateBipolarTransistor(IGBT)usesanadvancedterminationschemetoprovideanenhancedandreliablehighvoltage–blockingcapability.Itsnew600VIGBTtechnologyisspecificallysuitedforapplications | MotorolaMotorola, Inc 摩托羅拉加爾文制造公司 | Motorola | ||
InsulatedGateBipolarTransistor InsulatedGateBipolarTransistor N–ChannelEnhancement–ModeSiliconGate ThisInsulatedGateBipolarTransistor(IGBT)usesanadvancedterminationschemetoprovideanenhancedandreliablehighvoltage–blockingcapability.Itsnew600VIGBTtechnologyisspecificallysuitedforapplications | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
InsulatedGateBipolarTransistorwithAnti-ParallelDiode InsulatedGateBipolarTransistorwithAnti-ParallelDiode N–ChannelEnhancement–ModeSiliconGate ThisInsulatedGateBipolarTransistor(IGBT)isco–packagedwithasoftrecoveryultra–fastrectifierandusesanadvancedterminationschemetoprovideanenhancedandreliablehighvoltage–block | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI |
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
KERSEMI |
23+ |
TO-263 |
10000 |
公司只做原裝正品 |
詢價 | ||
KERSEMI |
TO-263 |
22+ |
6000 |
十年配單,只做原裝 |
詢價 | ||
KERSEMI |
23+ |
TO263 |
13000 |
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種 |
詢價 | ||
KERSEMI |
23+ |
TO-263 |
6000 |
原裝正品,支持實單 |
詢價 | ||
KERSEMI |
22+ |
TO-263 |
25000 |
只做原裝進口現(xiàn)貨,專注配單 |
詢價 | ||
KERSEMI |
24+ |
TO-263 |
12300 |
獨立分銷商 公司只做原裝 誠心經(jīng)營 免費試樣正品保證 |
詢價 | ||
KUU |
23+ |
SMB |
6000 |
誠信服務(wù),絕對原裝原盤 |
詢價 | ||
KUU |
21+ |
SMB |
4000 |
中國航天工業(yè)部戰(zhàn)略合作伙伴行業(yè)領(lǐng)導(dǎo)者 |
詢價 | ||
HOKURIKU |
6000 |
面議 |
19 |
DIP/SMD |
詢價 | ||
KUU |
23+ |
0402 |
7350 |
現(xiàn)貨供應(yīng),當天可交貨!免費送樣,原廠技術(shù)支持!!! |
詢價 |
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