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零件編號(hào)下載&訂購(gòu)功能描述制造商&上傳企業(yè)LOGO

KSMU20N06L

60V LOGIC N-Channel MOSFET

KERSEMI

Kersemi Electronic Co., Ltd.

LMAK20N06

N-ChannelEnhancementModePowerMOSFET

LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd

雷卯電子上海雷卯電子科技有限公司

LMD20N06A

N-ChannelEnhancementModeFieldEffectTransistor

LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd

雷卯電子上海雷卯電子科技有限公司

MCU20N06

N-ChannelEnhancementModeFieldEffectTransistor

MCCMicro Commercial Components

美微科美微科半導(dǎo)體股份有限公司

MCU20N06A

N-ChannelEnhancementModeFieldEffectTransistor

MCCMicro Commercial Components

美微科美微科半導(dǎo)體股份有限公司

MS20N06

N-Channel60-V(D-S)MOSFET

BWTECH

Bruckewell Technology LTD

MSD20N06

N-Channel60-V(D-S)MOSFET

BWTECH

Bruckewell Technology LTD

MSE20N06N

LowRDS(on)trenchtechnology

BWTECH

Bruckewell Technology LTD

MTB20N06FP

N-ChannelEnhancementModePowerMOSFET

CYSTEKECCystech Electonics Corp.

全宇昕科技全宇昕科技股份有限公司

MTB20N06FP

N-ChannelMOSFETusesadvancedtrenchtechnology

DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD

杜因特深圳市杜因特半導(dǎo)體有限公司

MTB20N06KFP

N-ChannelEnhancementModePowerMOSFET

CYSTEKECCystech Electonics Corp.

全宇昕科技全宇昕科技股份有限公司

MTD20N06

TMOSPOWERFET20AMPERES60VOLTSRDS(on)=0.080OHM

TMOSV?PowerFieldEffectTransistor DPAKforSurfaceMount N-ChannelEnhancement-ModeSiliconGate TMOSVisanewtechnologydesignedtoachieveanon–resistanceareaproductaboutone–halfthatofstandardMOSFETs.Thisnewtechnologymorethandoublesthepresentcelldensityofour50

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTD20N06HD

TMOSPOWERFET20AMPERES60VOLTSRDS(on)=0.045OHM

HDTMOSE-FET?PowerFieldEffectTransistor DPAKforSurfaceMount N-ChannelEnhancement-ModeSiliconGate ThisadvancedHDTMOSpowerFETisdesignedtowithstandhighenergyintheavalancheandcommutationmodes.Thisnewenergyefficientdesignalsooffersadrain–to–sourcediodewith

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTD20N06HD

PowerMOSFET20Amps,60VoltsN??hannelDPAK

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MTD20N06HDL

PowerMOSFET20Amps,60Volts,LogicLevelN??hannelDPAK

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MTD20N06HDL

TMOSPOWERFETLOGICLEVEL20AMPERES60VOLTSRDS(on)=0.045OHM

HDTMOSE-FET?PowerFieldEffectTransistor DPAKforSurfaceMount N-ChannelEnhancement-ModeSiliconGate Thisadvancedhigh–celldensityHDTMOSE–FETisdesignedtowithstandhighenergyintheavalancheandcommutationmodes.Thenewenergyefficientdesignalsooffersadrain–to–so

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTD20N06V

N??hannelDPAK

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MTD20N06V

TMOSPOWERFET20AMPERES60VOLTSRDS(on)=0.080OHM

TMOSV?PowerFieldEffectTransistor DPAKforSurfaceMount N-ChannelEnhancement-ModeSiliconGate TMOSVisanewtechnologydesignedtoachieveanon–resistanceareaproductaboutone–halfthatofstandardMOSFETs.Thisnewtechnologymorethandoublesthepresentcelldensityofour50

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTP20N06

TMOSPOWERFET20AMPERES60VOLTSRDS(on)=0.080OHM

TMOSVPowerFieldEffectTransistor N–ChannelEnhancement–ModeSiliconGate TMOSVisanewtechnologydesignedtoachieveanon–resistanceareaproductaboutone–halfthatofstandardMOSFETs.Thisnewtechnologymorethandoublesthepresentcelldensityofour50and60voltTMOSdevices.Ju

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTP20N06

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=20A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=85mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

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KERSEMI
23+
TO-251
10000
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KERSEMI
TO-251
22+
6000
十年配單,只做原裝
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KERSEMI
23+
TO-251
6000
原裝正品,支持實(shí)單
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KERSEMI
22+
TO-251
25000
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KERSEMI
24+
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12300
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KERSEMI/科盛美
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50000
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KERSEMI
21+
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10000
原裝現(xiàn)貨假一罰十
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KERSEMI/科盛美
23+
NA/
3749
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KERSEMI
TO-251
68900
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更多KSMU20N06L供應(yīng)商 更新時(shí)間2024-12-31 14:30:00