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LM2105

LM2105105-V,0.5-A/0.8-AHalf-BridgeDriverwith5-VUVLOandIntegratedBootstrapDiode

1Features ?DrivestwoN-channelMOSFETsinhalf-bridge configuration ?Integratedbootstrapdiode ?5-VtypicalundervoltagelockoutonGVDD ?105-VmaximumrecommendedvoltageonBST ?–19.5-Vabsolutemaximumnegativetransient voltagehandlingonSH ?0.5-A/0.8-Apeaksource/sinkcurr

TITexas Instruments

德州儀器美國(guó)德州儀器公司

LM2105

LM2105105-V,0.5-A,0.8-AHalf-BridgeDriverwith5-VUVLOandIntegratedBootstrapDiode

1Features ?DrivestwoN-channelMOSFETsinhalf-bridge configuration ?Integratedbootstrapdiode ?5-VtypicalundervoltagelockoutonGVDD ?105-VmaximumrecommendedvoltageonBST ?–19.5-Vabsolutemaximumnegativetransient voltagehandlingonSH ?0.5-A/0.8-Apeaksource/sinkcurr

TITexas Instruments

德州儀器美國(guó)德州儀器公司

LM2105

LM2105107-V,0.5-A,0.8-AHalf-BridgeDriverwith5-VUVLOandIntegratedBootstrapDiode

1Features ?DrivestwoN-channelMOSFETsinhalf-bridge configuration ?Integratedbootstrapdiode ?5-VtypicalundervoltagelockoutonGVDD ?107-VabsolutemaximumvoltageonBST ?–19.5-Vabsolutemaximumnegativetransient voltagehandlingonSH ?0.5-A/0.8-Apeaksource/sinkcurrent

TITexas Instruments

德州儀器美國(guó)德州儀器公司

LM2105DR

LM2105105-V,0.5-A,0.8-AHalf-BridgeDriverwith5-VUVLOandIntegratedBootstrapDiode

1Features ?DrivestwoN-channelMOSFETsinhalf-bridge configuration ?Integratedbootstrapdiode ?5-VtypicalundervoltagelockoutonGVDD ?105-VmaximumrecommendedvoltageonBST ?–19.5-Vabsolutemaximumnegativetransient voltagehandlingonSH ?0.5-A/0.8-Apeaksource/sinkcurr

TITexas Instruments

德州儀器美國(guó)德州儀器公司

LM2105DR

LM2105107-V,0.5-A,0.8-AHalf-BridgeDriverwith5-VUVLOandIntegratedBootstrapDiode

1Features ?DrivestwoN-channelMOSFETsinhalf-bridge configuration ?Integratedbootstrapdiode ?5-VtypicalundervoltagelockoutonGVDD ?107-VabsolutemaximumvoltageonBST ?–19.5-Vabsolutemaximumnegativetransient voltagehandlingonSH ?0.5-A/0.8-Apeaksource/sinkcurrent

TITexas Instruments

德州儀器美國(guó)德州儀器公司

LM2105DSGR

LM2105107-V,0.5-A,0.8-AHalf-BridgeDriverwith5-VUVLOandIntegratedBootstrapDiode

1Features ?DrivestwoN-channelMOSFETsinhalf-bridge configuration ?Integratedbootstrapdiode ?5-VtypicalundervoltagelockoutonGVDD ?107-VabsolutemaximumvoltageonBST ?–19.5-Vabsolutemaximumnegativetransient voltagehandlingonSH ?0.5-A/0.8-Apeaksource/sinkcurrent

TITexas Instruments

德州儀器美國(guó)德州儀器公司

LPA2105

Filterless6WClass-DMonoAudioAmplifier

POWERLowpower Semiconductor inc

微源半導(dǎo)體微源半導(dǎo)體股份有限公司

LPC2105

Single-chip32-bitmicrocontrollers;128kBISP/IAPFlashwith64kB/32kB/16kBRAM

Generaldescription TheLPC2104,2105and2106arebasedona16/32bitARM7TDMI-SCPUwithreal-timeemulationandembeddedtracesupport,togetherwith128kbytes(kB)ofembeddedhighspeedflashmemory.A128bitwidememoryinterfaceandauniqueacceleratorarchitectureenable32bitcodee

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

LPC2105

Single-chip32-bitmicrocontrollers;128kBISP/IAPflashwith16/32/64kBRAM

Generaldescription TheUARTarebasedona16/32-bitARM7TDMI-SCPUwithreal-timeemulationandembeddedtracesupport,togetherwith128kBofembeddedhighspeedflashmemory.A128-bitwidememoryinterfaceandauniqueacceleratorarchitectureenable32-bitcodeexecutionatmaximumclockr

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

LV2105

530MHzPLLFrequencySynthesizerLSI

Overview TheLV2105VisaPLLfrequencysynthesizerBi-CMOSLSIthatprovideslow-voltageoperationandlowcurrentdrain,andthatissuitableforuseinavarietyofradioequipment. Features ?Lowoperatingvoltage:(VCC=2.5to5.5V) ?Lowcurrentdrain(5.5mA) ?Compactpackage(SSOP1

SANYOSanyo Semicon Device

三洋三洋電機(jī)株式會(huì)社

詳細(xì)參數(shù)

  • 型號(hào):

    KT-2105

  • 制造商:

    Molex

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INFINEON
23+
8000
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KT
23+
SOP-8
89630
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VITROHM
2020+
NA
80000
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VITROHM
2447
NA
100500
一級(jí)代理專營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長(zhǎng)期排單到貨
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KTMICRO
24+
QFN
20189
原裝現(xiàn)貨
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KTMICRO
2023+
QFN-24
11000
AI智能識(shí)別、工業(yè)、汽車、醫(yī)療方案LPC批量及配套一站
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科韻創(chuàng)新
24+
DIP
9624
鄭重承諾只做原裝進(jìn)口現(xiàn)貨
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VITROHM
6000
面議
19
DIP/SMD
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KYOCERA
24+
4000
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進(jìn)口原裝
23+
原廠封裝
9980
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更多KT-2105供應(yīng)商 更新時(shí)間2025-4-12 15:00:00