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KUWEN-4110/Q

Plug-in Signal Conditioners K-UNIT

MSYSTEMM-System Co.,Ltd.

愛模愛模系統(tǒng)有限公司

KUWEN-4110SLASHQ

Plug-inSignalConditionersK-UNIT

MSYSTEMM-System Co.,Ltd.

愛模愛模系統(tǒng)有限公司

LL4110

FastSwitchingSurfaceMountDiode

Features ◇Smallsurfacemountingtype ◇Highreliability ◇Lowcurrentoperationat250uA Applications ◇Voltagestabilization

LUGUANGShenzhen Luguang Electronic Technology Co., Ltd

魯光電子深圳市魯光電子科技有限公司

LPTC4110A

Ultra-LowPDLFusedTapCoupler

OPLINK

OPLINK Communications Inc.

LPTC4110P

Ultra-LowPDLFusedTapCoupler

OPLINK

OPLINK Communications Inc.

LSC4110

1mW14PinDILCooledLaserModules

Description LSCX110lasermodulesarehighlyreliablefiberopticlightsourcesoperatinginthe1300nanometerband.TheinternalsemiconductorlasersarebaseduponInGaAsPburiedheterostructure(BH)technologyandfabricatedbytheMetalOrganicVaporPhaseEpitaxy(MOVPE)process,resulting

HPAgilent(Hewlett-Packard)

安捷倫科技安捷倫科技有限公司

LSC4110-BI

1mW14PinDILCooledLaserModules

Description LSCX110lasermodulesarehighlyreliablefiberopticlightsourcesoperatinginthe1300nanometerband.TheinternalsemiconductorlasersarebaseduponInGaAsPburiedheterostructure(BH)technologyandfabricatedbytheMetalOrganicVaporPhaseEpitaxy(MOVPE)process,resulting

HPAgilent(Hewlett-Packard)

安捷倫科技安捷倫科技有限公司

LSC4110-DN

1mW14PinDILCooledLaserModules

Description LSCX110lasermodulesarehighlyreliablefiberopticlightsourcesoperatinginthe1300nanometerband.TheinternalsemiconductorlasersarebaseduponInGaAsPburiedheterostructure(BH)technologyandfabricatedbytheMetalOrganicVaporPhaseEpitaxy(MOVPE)process,resulting

HPAgilent(Hewlett-Packard)

安捷倫科技安捷倫科技有限公司

LSC4110-FP

1mW14PinDILCooledLaserModules

Description LSCX110lasermodulesarehighlyreliablefiberopticlightsourcesoperatinginthe1300nanometerband.TheinternalsemiconductorlasersarebaseduponInGaAsPburiedheterostructure(BH)technologyandfabricatedbytheMetalOrganicVaporPhaseEpitaxy(MOVPE)process,resulting

HPAgilent(Hewlett-Packard)

安捷倫科技安捷倫科技有限公司

LSC4110-SC

1mW14PinDILCooledLaserModules

Description LSCX110lasermodulesarehighlyreliablefiberopticlightsourcesoperatinginthe1300nanometerband.TheinternalsemiconductorlasersarebaseduponInGaAsPburiedheterostructure(BH)technologyandfabricatedbytheMetalOrganicVaporPhaseEpitaxy(MOVPE)process,resulting

HPAgilent(Hewlett-Packard)

安捷倫科技安捷倫科技有限公司

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168
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