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L2SA812RLT1

General Purpose Transistors

LRCLeshan Radio Company

樂山無線電樂山無線電股份有限公司

L2SA812RLT1G

General Purpose Transistors

LRCLeshan Radio Company

樂山無線電樂山無線電股份有限公司

L2SA812RLT1G

General Purpose Transistors Epitaxial planar type.

LRCLeshan Radio Company

樂山無線電樂山無線電股份有限公司

L2SA812RLT1G_15

S- Prefix for Automotive and Other Applications Requiring Unique Site

LRCLeshan Radio Company

樂山無線電樂山無線電股份有限公司

L2SA812RLT3G

General Purpose Transistors Epitaxial planar type.

LRCLeshan Radio Company

樂山無線電樂山無線電股份有限公司

2SA812

SiliconEpitaxialPlanarTransistor

FEATURES ●Commplementaryto2SC1623. ●HighDCcurrentgain:hFE=200typ. (VCE=-6.0V,IC=-1.0mA) ●HighVoltage:VCEO=-50V. APPLICATIONS ●Audiofrequency,generalpurposeamplifier.

LUGUANGShenzhen Luguang Electronic Technology Co., Ltd

魯光電子深圳市魯光電子科技有限公司

2SA812

SiliconEpitaxialPlanarTransistor

BILINChangzhou Galaxy Century Microelectronics Co.,Ltd.

銀河微電常州銀河世紀(jì)微電子股份有限公司

2SA812

SiliconPNPtransistorinaSOT-23PlasticPackage

Descriptions SiliconPNPtransistorinaSOT-23PlasticPackage. Features Complementarypairwith2SC1623. Applications Audiofrequencyamplifierapplication.

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

藍(lán)箭電子佛山市藍(lán)箭電子股份有限公司

2SA812

Plastic-EncapsulateTransistors

FEATURES Complementaryto2SC1623 HighDCCurrentGain:hFE=200TYP.(VCE=-6V,IC=-1mA) HighVoltage:Vceo=-50V

HOTTECHGuangdong Hottech Co. Ltd.

合科泰深圳市合科泰電子有限公司

2SA812

Plastic-EncapsulateTransistors

Features: 1.hFEishigh,hFE=200(TYP)VCE=-6V,IC=-1mA; 2.Highvoltage,VCEO=-50V; Applications: Forgeneralamplification,itiscomplementaryto2SC1623.

SHENZHENSLSSHENZHEN SLS TECHNOLOGY CO.,LTD.

三聯(lián)盛科技股份深圳市三聯(lián)盛科技股份有限公司

2SA812

SOT-23Plastic-EncapsulateTransistors

TRANSISTOR(PNP) FEATURES ?Complementaryto2SC1623 ?HighDCCurrentGain:hFE=200TYP.(VCE=-6V,IC=-1mA) ?HighVoltage:Vceo=-50V

JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd

長電科技江蘇長電科技股份有限公司

2SA812

SiliconEpitaxialPlanarTransistor

BILINChangzhou Galaxy Century Microelectronics Co.,Ltd.

銀河微電常州銀河世紀(jì)微電子股份有限公司

2SA812

PNPGeneralPurposeTransistor

■FEATURES PNPGeneralPurposeTransistor

GSMEGuilin Strong Micro-Electronics Co., Ltd.

桂微桂林斯壯桂微電子有限責(zé)任公司

2SA812

TRANSISTOR(PNP)

FEATURES PowerdissipationPCM:0.2W(Tamb=25℃) CollectorcurrentICM:-0.1A Collector-basevoltageV(BR)CBO:-60V OperatingandstoragejunctiontemperaturerangeTJ,Tstg:-55℃to+150℃

WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD

永而佳實業(yè)深圳市永而佳實業(yè)有限公司

2SA812

SOT-23Plastic-EncapsulateTransistors

FEATURES Complementaryto2SC1623 HighDCCurrentGain:hFE=200TYP.(VCE=-6V,IC=-1mA) HighVoltage:Vceo=-50V

DGNJDZNanjing International Group Co

南晶電子東莞市南晶電子有限公司

2SA812

SOT-23BIPOLARTRANSISTORSTRANSISTOR(PNP)

RECTRON

Rectron Semiconductor

2SA812

PNPGeneralPurposeTransistors

PNPGeneralPurposeTransistors P/bLead(Pb)-Free

WEITRON

Weitron Technology

2SA812

TECHNICALSPECIFICATIONSOFPNPEPITAXIALPLANARTRANSISTOR

Description Designedforaudiofrequencyamplifierapplications.

DCCOM

Dc Components

2SA812

TRANSISTOR(PNP)

FEATURES ●Complementaryto2SC1623 ●HighDCCurrentGain:hFE=200TYP.(VCE=-6V,IC=-1mA) ●HighVoltage:Vceo=-50V

HTSEMIShenzhen Jin Yu Semiconductor Co., Ltd.

金譽半導(dǎo)體深圳市金譽半導(dǎo)體股份有限公司

2SA812

PNPSiliconEpitaxialTransistor

Features ●HighDCCurrentGain:hFE=200TYP.(VCE=-6.0V,IC=-1.0mA) ●HighVoltage:VCEO=-50V

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實業(yè)有限公司

詳細(xì)參數(shù)

  • 型號:

    L2SA812RL

  • 制造商:

    LRC

  • 制造商全稱:

    Leshan Radio Company

  • 功能描述:

    General Purpose Transistors

供應(yīng)商型號品牌批號封裝庫存備注價格
LRC樂山
2014
SOT23
2850
原裝正品現(xiàn)貨
詢價
LRC/樂山
22+
SOT23
600000
航宇科工半導(dǎo)體-央企優(yōu)秀戰(zhàn)略合作伙伴!
詢價
LRC
23+
SOT23
510000
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
詢價
LRC
24+
SOT-23
6000
詢價
LRC
2020+
SOT23
3000
百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可
詢價
LRC
23+
NA
25060
只做進口原裝,終端工廠免費送樣
詢價
LRC
23+
NA
69000
專業(yè)電子元器件供應(yīng)鏈正邁科技特價代理QQ1304306553
詢價
LRC
24+
SOPDIP
40846
原裝進口現(xiàn)貨假一賠百
詢價
LRC
22+23+
SOT23
49946
絕對原裝正品現(xiàn)貨,全新深圳原裝進口現(xiàn)貨
詢價
LRC
18+
SOT23-3
85600
保證進口原裝可開17%增值稅發(fā)票
詢價
更多L2SA812RL供應(yīng)商 更新時間2025-1-6 14:46:00