| 零件編號 | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
HighEnergyPowerFET | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
TMOSPOWERFET3.0AMPERES600VOLTS TheD2PAKpackagehasthecapabilityofhousingalargerdiethananyexistingsurfacemountpackagewhichallowsittobeusedinapplicationsthatrequiretheuseofsurfacemountcomponentswithhigherpowerandlowerRDS(on)capabilities.ThishighvoltageMOSFETusesanadvancedterminationscheme | MotorolaMotorola, Inc 摩托羅拉加爾文制造公司 | Motorola | ||
PowerFieldEffectTransistor PowerFieldEffectTransistor N-ChannelEnhancement-Mode SiliconGateTWOS TheseTMOSPowerFETsaredesignedforhighvoltage,highspeedpowerswitchingapplicationssuchasswitchingregulators,converters,solenoidandrelaydrivers. ?SiliconGateforFastSwitchingSpeeds—SwitchingTim | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司 | NJSEMI | ||
PowerFieldEffectTransistor PowerFieldEffectTransistor N-ChannelEnhancement-Mode SiliconGateTWOS TheseTMOSPowerFETsaredesignedforhighvoltage,highspeedpowerswitchingapplicationssuchasswitchingregulators,converters,solenoidandrelaydrivers. ?SiliconGateforFastSwitchingSpeeds—SwitchingTim | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司 | NJSEMI | ||
N-ChannelEnhancementModePowerMOSFET | CYSTEKECCystech Electonics Corp. 全宇昕科技全宇昕科技股份有限公司 | CYSTEKEC | ||
N-ChannelEnhancementModePowerMOSFET | CYSTEKECCystech Electonics Corp. 全宇昕科技全宇昕科技股份有限公司 | CYSTEKEC | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=3A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=2.5Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
N-Channel650V(D-S)MOSFET FEATURES ?LowGateChargeQgResultsinSimpleDrive Requirement ?ImprovedGate,AvalancheandDynamicdV/dt Ruggedness ?FullyCharacterizedCapacitanceandAvalancheVoltage andCurrent ?ComplianttoRoHSdirective2002/95/EC | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司 | VBSEMI | ||
N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR ■TYPICALRDS(on)=2? ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100°C ■APPLICATIONORIENTEDCHARACTERIZATION APPLICATIONS ■HIGHCURRENT,HIGHSPEEDSWITCHING ■SWITCHMODEPOWERSUPPLIES(SMPS) ■ | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司 | NJSEMI | ||
N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR ■TYPICALRDS(on)=2? ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100oC ■APPLICATIONORIENTEDCHARACTERIZATION APPLICATIONS ■HIGHCURRENT,HIGHSPEEDSWITCHING ■SWITCHMODEPOWERSUPPLIES(SMPS) ■ | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS |
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
LRC/樂山無線電 |
23+ |
TO-220F |
18000 |
原裝正品假一罰百!可開增票! |
詢價(jià) | ||
LRC/樂山 |
22+ |
TO-220F |
50000 |
原裝正品.假一罰十 |
詢價(jià) | ||
LRC/樂山 |
23+ |
TO-220F |
98000 |
詢價(jià) | |||
LRC/樂山 |
25+ |
TO-220F |
880000 |
明嘉萊只做原裝正品現(xiàn)貨 |
詢價(jià) | ||
艾思科/ESSENCOR |
23+ |
LPDDR3 |
13000 |
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價(jià)格優(yōu)勢、品種 |
詢價(jià) | ||
ST |
22+ |
QFN |
5000 |
原裝現(xiàn)貨庫存.價(jià)格優(yōu)勢!! |
詢價(jià) | ||
ST |
24+ |
QFN |
49 |
詢價(jià) | |||
ST |
2020+ |
QFN |
4500 |
百分百原裝正品 真實(shí)公司現(xiàn)貨庫存 本公司只做原裝 可 |
詢價(jià) | ||
ST |
1725+ |
QFN |
6528 |
只做原裝正品現(xiàn)貨或訂貨!假一賠十! |
詢價(jià) | ||
ON/安森美 |
23+ |
SOD123 |
15000 |
全新原裝現(xiàn)貨,價(jià)格優(yōu)勢 |
詢價(jià) |
