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L6389E集成電路(IC)的柵極驅(qū)動(dòng)器規(guī)格書(shū)PDF中文資料

L6389E
廠商型號(hào)

L6389E

參數(shù)屬性

L6389E 封裝/外殼為8-SOIC(0.154",3.90mm 寬);包裝為管件;類(lèi)別為集成電路(IC)的柵極驅(qū)動(dòng)器;產(chǎn)品描述:IC GATE DRVR HALF-BRIDGE HI/LO

功能描述

High voltage high and low-side driver
IC GATE DRVR HALF-BRIDGE HI/LO

封裝外殼

8-SOIC(0.154",3.90mm 寬)

文件大小

437.45 Kbytes

頁(yè)面數(shù)量

19 頁(yè)

生產(chǎn)廠商 STMicroelectronics
企業(yè)簡(jiǎn)稱(chēng)

STMICROELECTRONICS意法半導(dǎo)體

中文名稱(chēng)

意法半導(dǎo)體集團(tuán)官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

原廠下載下載地址一下載地址二到原廠下載

更新時(shí)間

2025-3-9 13:29:00

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L6389E規(guī)格書(shū)詳情

L6389E屬于集成電路(IC)的柵極驅(qū)動(dòng)器。由意法半導(dǎo)體集團(tuán)制造生產(chǎn)的L6389E柵極驅(qū)動(dòng)器柵極驅(qū)動(dòng)器電源管理集成電路 (PMIC) 可用于提供隔離、放大、參考位移、自舉或其他必要功能,這些功能可將來(lái)自電源轉(zhuǎn)換應(yīng)用中控制設(shè)備的信號(hào)連接到電源被控制通過(guò)的半導(dǎo)體設(shè)備(通常為 FET 或 IGBT)。任何特定設(shè)備提供的確切功能各不相同,但與它適合驅(qū)動(dòng)的半導(dǎo)體配置相關(guān)。

Features

? High voltage rail up to 600 V

? dV/dt immunity ± 50 V/nsec in full temperature

range

? Driver current capability:

– 400 mA source

– 650 mA sink

? Switching times 70/40 nsec rise/fall with 1 nF

load

? 3.3 V, 5 V, 15 V CMOS/TTL input comparators

with hysteresis and pull-down

? Internal bootstrap diode

? Outputs in phase with inputs

? Deadtime and interlocking function

Description

The L6389E is a high voltage gate driver,

manufactured with the BCD ? “offline”

technology, and able to drive a half-bridge of

power MOSFET/IGBT devices. The high-side

(floating) section is enabled to work with voltage

rail up to 600 V. Both device outputs can sink and

source 650 mA and 400 mA respectively and

cannot be simultaneously driven high thanks to an

integrated interlocking function. Further

prevention from outputs cross conduction is

guaranteed by the deadtime function.

The L6389E device has two input and two output

pins, and guarantees the outputs switch in phase

with inputs. The logic inputs are CMOS/TTL

compatible (3.3 V, 5 V and 15 V) to ease the

interfacing with controlling devices.

The bootstrap diode is integrated in the driver

allowing a more compact and reliable solution.

The L6389E device features the UVLO protection

on both supply voltages (VCC and VBOOT)

ensuring greater protection against voltage drops

on the supply lines.

The device is available in an SO-8 tube, and tape

and reel packaging options.

Applications

? Home appliances

? Industrial applications and drives

? Motor drivers

– DC, AC, PMDC and PMAC motors

? Induction heating

? HVAC

? Factory automation

? Lighting applications

? Power supply systems

產(chǎn)品屬性

更多
  • 產(chǎn)品編號(hào):

    L6389EDTR

  • 制造商:

    STMicroelectronics

  • 類(lèi)別:

    集成電路(IC) > 柵極驅(qū)動(dòng)器

  • 包裝:

    管件

  • 驅(qū)動(dòng)配置:

    半橋

  • 通道類(lèi)型:

    獨(dú)立式

  • 柵極類(lèi)型:

    IGBT,N 溝道,P 溝道 MOSFET

  • 電壓 - 供電:

    17V(最大)

  • 邏輯電壓?- VIL,VIH:

    1.1V,1.8V

  • 電流 - 峰值輸出(灌入,拉出):

    400mA,650mA

  • 輸入類(lèi)型:

    反相

  • 上升/下降時(shí)間(典型值):

    70ns,40ns

  • 工作溫度:

    -45°C ~ 125°C(TJ)

  • 安裝類(lèi)型:

    表面貼裝型

  • 封裝/外殼:

    8-SOIC(0.154",3.90mm 寬)

  • 供應(yīng)商器件封裝:

    8-SOIC

  • 描述:

    IC GATE DRVR HALF-BRIDGE HI/LO

供應(yīng)商 型號(hào) 品牌 批號(hào) 封裝 庫(kù)存 備注 價(jià)格
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1000
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2020+
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ST(意法半導(dǎo)體)
2447
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NA
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