LC35W1000BM中文資料三洋數(shù)據(jù)手冊PDF規(guī)格書

Overview

The LC35W1000BM and LC35W1000BTS-70U/10U are asynchronous silicon gate CMOS static RAM devices with a 131,072-word by 8-bit structure. They provide two chip enable pins (CE1 and CE2) for device select/deselect control and one output enable pin (OE) for output control. They feature high speed, low power, and a wide operating temperature range.This makes them optimal for use in systems that require high speed, low power, and battery backup. They also support easy memory expansion.

Features

? Low-voltage operation: 2.7 to 3.6 V

? Wide operating temperature range: –40 to +85°C

? Access time:

70 ns (maximum): LC35W1000BM and LC35W1000BTS-70U.

100 ns (maximum): LC35W1000BM and LC35W1000BTS-10U.

? Low current drain

Standby mode: 0.1 μA (typical*) at Ta = +25°C

10.0 μA (maximum) at Ta = –40 to +70°C

20.0 μA (maximum) at Ta = –40 to +85°C

? Data retention voltage: 2.0 to 3.6 V

? No clock required (fully static circuits)

? Input/output shared function pins, 3-state output pins

? Package

32-pin SOP (525 mil) plastic package: LC35W1000BM

32-pin TSOP (8 × 14 mm) plastic package (Normal): LC35W1000BTS