LD1003S中文資料ETC數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

[Lovoltech, Inc.]

Description

The Power JFET transistor from Lovoltech is a device that presents a Low Rdson allowing for improved efficiencies in DCDC switching applications. The device is designed with a low threshold such that drivers can operate at 5V, which reduces the driver power dissipation and increases the overall efficiency. Lower threshold produces faster turn-on/turn-off, which minimizes the required dead time. The transistor “No Body Diode” provides a very low associated parasitic capacitance Cds. A Schottky Diode is added for applications where a freewheeling diode is required. Ringing is also reduced so that a lower voltage device may be a better solution.

Features

◆ Trench Power JFET with low threshold voltage Vth.

◆ Device fully “ON” with Vgs = 0.7V

◆ Optimum for “Low Side” Buck Converters

◆ Optimized for Secondary Rectification in isolated DC-DC

◆ Low Rg and low Cds for high speed switching

◆ No “Body Diode”; extremely low Cds

◆ Added Fast Recovery Schottky Diode in same package

Applications

◆ DC-DC Converters

◆ Synchronous Rectifiers

◆ PC Motherboard Converters

◆ Step-down power supplies

◆ Brick Modules

◆ VRM Modules