LE28C1001T-12中文資料三洋數(shù)據(jù)手冊(cè)PDF規(guī)格書

Overview

The LE28C1001M, T series ICs are 1 MEG flash memory products that feature a 131072-word ×8-bit organization and 5 V single-voltage power supply operation. CMOS peripheral circuits are adopted for high speed, low power dissipation, and ease of use. A 128-byte page rewrite function provides rapid data rewriting.

Features

? Highly reliable 2-layer polysilicon CMOS flash EEPROM process

? Read and write operations using a 5 V single-voltage power supply

? Fast access time: 90, 120, and 150 ns

? Low power dissipation

— Operating current (read): 30 mA (maximum)

— Standby current: 20 μA (maximum)

? Highly reliable read/write

— Erase/write cycles: 104/103 cycles

— Data retention: 10 years

? Address and data latches

? Fast page rewrite operation

— 128 bytes per page

— Byte/page rewrite time: 5 ms (typical)

— Chip rewrite time: 5 s (typical)

? Automatic rewriting using internally generated Vpp

? Rewrite complete detection function

— Toggle bit

— Data polling

? Hardware and software data protection functions

? All inputs and outputs are TTL compatible.

? Pin assignment conforms to the JEDEC byte-wide EEPROM standard.

? Package

SOP 32-pin (525 mil) plastic package : LE28C1001M

TSOP 32-pin (8 ×20 mm)plastic package : LE28C1001T