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LET19060C中文資料意法半導(dǎo)體數(shù)據(jù)手冊(cè)PDF規(guī)格書

LET19060C
廠商型號(hào)

LET19060C

功能描述

RF POWER TRANSISTORS Ldmos Enhanced Technology

文件大小

34.75 Kbytes

頁(yè)面數(shù)量

4 頁(yè)

生產(chǎn)廠商 STMicroelectronics
企業(yè)簡(jiǎn)稱

STMICROELECTRONICS意法半導(dǎo)體

中文名稱

意法半導(dǎo)體集團(tuán)官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠下載

更新時(shí)間

2025-1-9 9:13:00

LET19060C規(guī)格書詳情

DESCRIPTION

The LET19060C is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The LET19060C is designed for high gain and broadband performance operating in common source mode at 26 V. Its internal matching makes it ideal for base station applications requiring high linearity.

N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs

? IS-97 CDMA PERFORMANCES

POUT = 7.5 W

EFF. = 18

? EDGE PERFORMANCES

POUT = 30 W

EFF. = 25

? GSM PERFORMANCES

POUT = 65 W

EFF. = 45

? EXCELLENT THERMAL STABILITY

? BeO FREE PACKAGE

? INTERNAL INPUT/OUTPUT MATCHING

? ESD PROTECTION

產(chǎn)品屬性

  • 型號(hào):

    LET19060C

  • 制造商:

    STMICROELECTRONICS

  • 制造商全稱:

    STMicroelectronics

  • 功能描述:

    RF POWER TRANSISTORS Ldmos Enhanced Technology

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