首頁 >LGB8204ATH>規(guī)格書列表
零件編號(hào) | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
LGB8204ATH | 400 V, 18 A N-Channel Ignition IGBT Description ThisLogicLevelInsulatedGateBipolarTransistor(IGBT)featuresmonolithiccircuitryintegratingESDinductivecoildriversapplications.PrimaryusesincludeIgnition,DirectFuelInjection,orwhereverhighvoltageandhighcurrentswitchingisrequired. Features ?VoltageCl | Littelfuselittelfuse 力特力特公司 | Littelfuse | |
LGB8204ATH | 包裝:散裝 封裝/外殼:TO-263-3,D2Pak(2 引線 + 接片),TO-263AB 類別:分立半導(dǎo)體產(chǎn)品 晶體管 - UGBT、MOSFET - 單 描述:D2PAK, IGBT3 | IXYS IXYS Corporation | IXYS | |
TONERINGER | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
DigitalX-AxisorZ-AxisAccelerometer | nxpNXP Semiconductors 恩智浦恩智浦半導(dǎo)體公司 | nxp | ||
DigitalX-AxisorZ-AxisAccelerometer | freescaleFreescale Semiconductor, Inc 飛思卡爾飛思卡爾半導(dǎo)體 | freescale | ||
DigitalX-AxisorZ-AxisAccelerometer | freescaleFreescale Semiconductor, Inc 飛思卡爾飛思卡爾半導(dǎo)體 | freescale | ||
DigitalX-AxisorZ-AxisAccelerometer | freescaleFreescale Semiconductor, Inc 飛思卡爾飛思卡爾半導(dǎo)體 | freescale | ||
GENERALPURPOSE6-PINPHOTOTRANSISTOROPTOCOUPLERS DESCRIPTION TheMOC8204deviceconsistsofagalliumarsenideinfraredemittingdiodeopticallycoupledtoahighvoltage,silicon,phototransistordetectorinastandard6-pinDIPpackage.Itisdesignedforhighvoltageapplicationsandisparticularlyusefulincopymachinesandsolidstatere | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
6-PinDIPOptoisolatorsHighVoltageTransistorOutput(400Volts) TheMOC8204,MOC8205andMOC8206devicesconsistofgalliumarsenideinfraredemittingdiodesopticallycoupledtohighvoltage,silicon,phototransistordetectorsinastandard6–pinDIPpackage.Theyaredesignedforhighvoltageapplicationsandareparticularlyusefulincopymachinesandsol | MotorolaMotorola, Inc 摩托羅拉加爾文制造公司 | Motorola | ||
HighVoltagePhototransistorOptocouplers GeneralDescription The4N38M,H11DXMandMOC8204Marephototransistor-typeopticallycoupledoptoisolators.AgalliumarsenideinfraredemittingdiodeiscoupledwithahighvoltageNPNsiliconphototransistor.Thedeviceissuppliedinastandardplasticsix-pindual-in-linepackage. Fea | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
HighVoltagePhototransistorOptocouplers GeneralDescription The4N38M,H11DXMandMOC8204Marephototransistor-typeopticallycoupledoptoisolators.AgalliumarsenideinfraredemittingdiodeiscoupledwithahighvoltageNPNsiliconphototransistor.Thedeviceissuppliedinastandardplasticsix-pindual-in-linepackage. Fea | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
HighVoltagePhototransistorOptocouplers GeneralDescription The4N38M,H11DXMandMOC8204Marephototransistor-typeopticallycoupledoptoisolators.AgalliumarsenideinfraredemittingdiodeiscoupledwithahighvoltageNPNsiliconphototransistor.Thedeviceissuppliedinastandardplasticsix-pindual-in-linepackage. Fea | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
HighVoltagePhototransistorOptocouplers GeneralDescription The4N38M,H11DXMandMOC8204Marephototransistor-typeopticallycoupledoptoisolators.AgalliumarsenideinfraredemittingdiodeiscoupledwithahighvoltageNPNsiliconphototransistor.Thedeviceissuppliedinastandardplasticsix-pindual-in-linepackage. Fea | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
HighVoltagePhototransistorOptocouplers GeneralDescription The4N38M,H11DXMandMOC8204Marephototransistor-typeopticallycoupledoptoisolators.AgalliumarsenideinfraredemittingdiodeiscoupledwithahighvoltageNPNsiliconphototransistor.Thedeviceissuppliedinastandardplasticsix-pindual-in-linepackage. Fea | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
6-PinDIPHighVoltagePhototransistorOptocouplers Description The4N38M,H11D1M,H11D3MandMOC8204Mare phototransistor?typeopticallycoupledoptoisolators.Agallium arsenideinfraredemittingdiodeiscoupledwithahighvoltageNPN siliconphototransistor.Thedeviceissuppliedinastandardplastic six?pindual?in?linepackage. Fea | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
IntegratedESDDiodeProtection | Littelfuselittelfuse 力特力特公司 | Littelfuse | ||
IgnitionIGBT18Amps,400Volts | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
IgnitionIGBT18Amps,400Volts | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
SingleSupply,Rail-to-RailOutputQuadOperationalAmplifier ■FEATURES ●IntegratedEMIFilter ●Rail-to-RailOutput0.1Vto4.9Vtyp. @V+=5V,Ta=25°C ●OperatingTemperature?40°Cto125°C ●OperationVoltage2.5Vto14V(±1.25to±7V) ●SlewRate3.5V/μstyp. ●GBW10MHztyp. ●EquivalentInputNoiseVoltage10nV/√Hztyp.@1kHz ●InputOffse | NJRCNew Japan Radio 新日本無線株式會(huì)社 | NJRC | ||
SingleSupply,Rail-to-RailOutputQuadOperationalAmplifier ■FEATURES ●IntegratedEMIFilter ●Rail-to-RailOutput0.1Vto4.9Vtyp. @V+=5V,Ta=25°C ●OperatingTemperature?40°Cto125°C ●OperationVoltage2.5Vto14V(±1.25to±7V) ●SlewRate3.5V/μstyp. ●GBW10MHztyp. ●EquivalentInputNoiseVoltage10nV/√Hztyp.@1kHz ●InputOffse | NJRCNew Japan Radio 新日本無線株式會(huì)社 | NJRC |
產(chǎn)品屬性
- 產(chǎn)品編號(hào):
LGB8204ATH
- 制造商:
IXYS
- 類別:
分立半導(dǎo)體產(chǎn)品 > 晶體管 - UGBT、MOSFET - 單
- 包裝:
散裝
- 不同?Vge、Ic 時(shí)?Vce(on)(最大值):
2V @ 4.5V,10A
- 輸入類型:
邏輯
- 工作溫度:
-55°C ~ 175°C(TJ)
- 安裝類型:
表面貼裝型
- 封裝/外殼:
TO-263-3,D2Pak(2 引線 + 接片),TO-263AB
- 供應(yīng)商器件封裝:
D2PAK
- 描述:
D2PAK, IGBT3
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
IXYS |
24+ |
TO-263-3 D?Pak(2 引線 + 接片 |
9350 |
獨(dú)立分銷商 公司只做原裝 誠心經(jīng)營 免費(fèi)試樣正品保證 |
詢價(jià) | ||
LITTELFUSE-ESBU |
409600 |
詢價(jià) | |||||
LUCENT |
24+ |
11665 |
詢價(jià) | ||||
LRC |
23+ |
SOD-323 |
63000 |
原裝正品現(xiàn)貨 |
詢價(jià) | ||
LRC/樂山 |
22+ |
SOD-323 |
9600 |
原裝現(xiàn)貨,優(yōu)勢(shì)供應(yīng),支持實(shí)單! |
詢價(jià) | ||
LRC/樂山 |
23+ |
13000 |
原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種 |
詢價(jià) | |||
LRC |
22+ |
SOD-323 |
7288 |
原裝現(xiàn)貨 |
詢價(jià) | ||
LRC/樂山 |
23+ |
SOD-323 |
50000 |
原裝正品 支持實(shí)單 |
詢價(jià) | ||
KEL |
23+ |
6540 |
只做原裝正品現(xiàn)貨或者訂貨假一賠十! |
詢價(jià) | |||
KEL |
23+ |
6500 |
只做原裝正品現(xiàn)貨或訂貨假一賠十! |
詢價(jià) |
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