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LGUW6331MELB

Withstanding 3000 hours application of rated ripple current at 105?C.

nichiconNichicon corporation

尼吉康日本尼吉康株式會(huì)社

LGUW6331MELB

包裝:散裝 封裝/外殼:徑向,Can - 卡入式 類別:電容器 鋁電解電容器 描述:CAP ALUM 330UF 20% 420V SNAP

nichiconNichicon corporation

尼吉康日本尼吉康株式會(huì)社

LGUW6331MELC

Withstanding3000hoursapplicationofratedripplecurrentat105?C.

nichiconNichicon corporation

尼吉康日本尼吉康株式會(huì)社

MAX6331

PrecisionShuntRegulatorswithResetinSOT23-3

MaximMaxim Integrated Products

美信美信半導(dǎo)體

MAX6331_UR-T

PrecisionShuntRegulatorswithResetinSOT23-3

MaximMaxim Integrated Products

美信美信半導(dǎo)體

MAX6331_UR-T

PrecisionShuntRegulatorswithResetinSOT23-3

MaximMaxim Integrated Products

美信美信半導(dǎo)體

MAX6331_UR-T

PrecisionShuntRegulatorswithResetinSOT23-3

GeneralDescription TheMAX6330/MAX6331combineaprecisionshuntregulatorwithapower-onresetfunctioninasingleSOT23-3package.Theyofferalow-costmethodofoperatingsmallmicroprocessor(μP)-basedsystemsfromhigh-voltagesources,whilesimultaneouslyprotectingμPsfrompower-up,p

MaximMaxim Integrated Products

美信美信半導(dǎo)體

MAX6331-T

5-PinuPSupervisoryCircuitswithWatchdogandManualReset

MaximMaxim Integrated Products

美信美信半導(dǎo)體

MCH6331

P-ChannelSiliconMOSFETGeneral-PurposeSwitchingDeviceApplications

General-PurposeSwitchingDeviceApplications Features ?LowON-resistance ?4Vdrive ?Halogenfreecompliance

SANYOSanyo

三洋三洋電機(jī)株式會(huì)社

MCH6331

SingleP-ChannelPowerMOSFET

ThisPowerMOSFETisproducedusingONSemiconductor’strenchtechnology,whichisspecificallydesignedtominimizegatechargeandlowonresistance.Thisdeviceissuitableforapplicationswithlowgatechargedrivingorlowonresistancerequirements. Features ?LowOn-Resistance ?4Vdriv

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MCH6331

P-Channel20V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺灣)有限公司

MCH6331

General-PurposeSwitchingDeviceApplications

SANYOSanyo

三洋三洋電機(jī)株式會(huì)社

MCH6331-TL-H

SingleP-ChannelPowerMOSFET

ThisPowerMOSFETisproducedusingONSemiconductor’strenchtechnology,whichisspecificallydesignedtominimizegatechargeandlowonresistance.Thisdeviceissuitableforapplicationswithlowgatechargedrivingorlowonresistancerequirements. Features ?LowOn-Resistance ?4Vdriv

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MCH6331-TL-W

SingleP-ChannelPowerMOSFET

ThisPowerMOSFETisproducedusingONSemiconductor’strenchtechnology,whichisspecificallydesignedtominimizegatechargeandlowonresistance.Thisdeviceissuitableforapplicationswithlowgatechargedrivingorlowonresistancerequirements. Features ?LowOn-Resistance ?4Vdriv

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MG6331

SILICONEPITAXIALPLANARNPNTRANSISTOR

SEME-LAB

Seme LAB

MG6331-R

SILICONEPITAXIALPLANARNPNTRANSISTOR

SEME-LAB

Seme LAB

MMA6331L

?4g,?9gTwoAxisLow-gMicromachinedAccelerometer

freescaleFreescale Semiconductor, Inc

飛思卡爾飛思卡爾半導(dǎo)體

MMA6331LT

?4g,?9gTwoAxisLow-gMicromachinedAccelerometer

freescaleFreescale Semiconductor, Inc

飛思卡爾飛思卡爾半導(dǎo)體

MS6331

16-bitStereoAudioDAC&HeadphoneDriverComponentLess,LowCost

MOSAMOSA ELECTRONICS

茂昇電子茂昇電子股份有限公司

MS6331

16-bitStereoAudioDAC&HeadphoneDriverComponentLess,LowCost

MOSAMOSA ELECTRONICS

茂昇電子茂昇電子股份有限公司

產(chǎn)品屬性

  • 產(chǎn)品編號:

    LGUW6331MELB

  • 制造商:

    Nichicon

  • 類別:

    電容器 > 鋁電解電容器

  • 系列:

    LGU

  • 包裝:

    散裝

  • 容差:

    ±20%

  • 不同溫度時(shí)使用壽命:

    105°C 時(shí)為 3000 小時(shí)

  • 工作溫度:

    -25°C ~ 105°C

  • 極化:

    極化

  • 應(yīng)用:

    通用

  • 引線間距:

    0.394"(10.00mm)

  • 大小 / 尺寸:

    1.181" 直徑(30.00mm)

  • 高度 - 安裝(最大值):

    1.772"(45.00mm)

  • 安裝類型:

    通孔

  • 封裝/外殼:

    徑向,Can - 卡入式

  • 描述:

    CAP ALUM 330UF 20% 420V SNAP

供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
NICHICON
20+
電容器
926
就找我吧!--邀您體驗(yàn)愉快問購元件!
詢價(jià)
NICHICON/尼吉康
2022+
DIP
120000
原廠代理 終端免費(fèi)提供樣品
詢價(jià)
NICHICON/尼吉康
23+
DIP
13000
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nichicon
DIP-2
16500
一級代理 原裝正品假一罰十價(jià)格優(yōu)勢長期供貨
詢價(jià)
NICHICON/尼吉康
23+
98000
詢價(jià)
NICHICON/尼吉康
2020+
DIP
880000
明嘉萊只做原裝正品現(xiàn)貨
詢價(jià)
Nichicon
23+
電容
6680
全新原裝優(yōu)勢
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更多LGUW6331MELB供應(yīng)商 更新時(shí)間2021-9-14 10:50:00