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28F016SA

28F016SA16-MBIT(1MBITX16,2MBITX8)FlashFileMEMORY

INTRODUCTION ThedocumentationoftheIntel28F016SAmemorydeviceincludesthisdatasheet,adetaileduser’smanual,andanumberofapplicationnotes,allofwhicharereferencedattheendofthisdatasheet. IncludesCommercialandExtendedTemperatureSpecifications ■User-Selectable3.3Vo

IntelIntel Corporation（Integrated Electronics Corporation)

英特爾英特爾（美國(guó)科技公司）

28F016SV

16-MBIT(1MBITx16,2MBITx8)FlashFileMEMORY

Intel’s28F016SV16-MbitFlashFile?memoryisarevolutionaryarchitecturewhichistheidealchoicefordesigningembeddeddirect-executecodeandmassstoragedata/fileflashmemorysystems.Withinnovativecapabilities,low-poweroperation,user-selectableVPPvoltageandhighread/programperf

IntelIntel Corporation（Integrated Electronics Corporation)

英特爾英特爾（美國(guó)科技公司）

28F016XD

16-MBIT(1MBITx16)DRAM-INTERFACEFLASHMEMORY

INTRODUCTION ThedocumentationoftheIntel28F016XDflashmemorydeviceincludesthisdatasheet,adetaileduser’smanual,andanumberofapplicationnotesanddesigntools,allofwhicharereferencedinAppendixB. Thedatasheetisintendedtogiveanoverviewofthechipfeature-setandof

IntelIntel Corporation（Integrated Electronics Corporation)

英特爾英特爾（美國(guó)科技公司）

28F016XS

16-MBIT(1MBITx16,2MBITx8)SYNCHRONOUSFLASHMEMORY

Intel’s28F016XS16-Mbitflashmemoryisarevolutionaryarchitecturewhichistheidealchoicefordesigningtrulyrevolutionaryhigh-performanceproducts.Combiningveryhighreadperformancewiththeintrinsicnonvolatilityofflashmemory,the28F016XSeliminatesthetraditionalredundantmemo

IntelIntel Corporation（Integrated Electronics Corporation)

英特爾英特爾（美國(guó)科技公司）

LH28F016LL

16M(1M?16,2M?8)FlashMemory

INTRODUCTION Sharp’sLH28F016LL16MFlashMemoryisarevolutionaryarchitecturewhichenablesthedesignoftrulymobile,highperformance,personalcomputingandcommunicationproducts.Withinnovativecapabilities,3Vsinglevoltageoperationandveryhighread/writeperformance,theLH28F016

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美國(guó)夏普微電子公司（SMA）

LH28F016SA

16M(1M?16,2M?8)FlashMemory

INTRODUCTION Sharp’sLH28F016SA16MFlashMemoryisarevolutionaryarchitecturewhichenablesthedesignoftrulymobile,highperformance,personalcomputingandcommunicationproducts.Withinnovativecapabilities,5Vsinglevoltageoperationandveryhighread/writeperformance,theLH28F016

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美國(guó)夏普微電子公司（SMA）

LH28F016SANS

16Mbit(1Mbitx16,2Mbitx8)

16Mbit(1Mbitx16,2Mbitx8)FlashMemory

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美國(guó)夏普微電子公司（SMA）

LH28F016SCH

16-MBIT(2MBx8)SmartVoltageFlashMEMORY

16M(2Mx8)SmartVoltageFlashMemory

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美國(guó)夏普微電子公司（SMA）

LH28F016SCHB

16MbitFlashMemory

16MbitFlashMemory

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美國(guó)夏普微電子公司（SMA）

LH28F016SCH-L

16M-bit(2MBx8)SmartVoltageFlashMemories

DESCRIPTION TheLH28F016SC-L/SCH-LflashmemorieswithSmartVoltagetechnologyarehigh-density,low-cost,nonvolatile,read/writestoragesolutionforawiderangeofapplications.Theirsymmetrically-blockedarchitecture,flexiblevoltageandenhancedcyclingcapabilityprovideforhighlyflexi

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美國(guó)夏普微電子公司（SMA）

LH28F016SCH-L

16-MBIT(2MBx8)SmartVoltageFlashMEMORY

16M(2Mx8)SmartVoltageFlashMemory

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美國(guó)夏普微電子公司（SMA）

LH28F016SC-L

16M-bit(2MBx8)SmartVoltageFlashMemories

DESCRIPTION TheLH28F016SC-L/SCH-LflashmemorieswithSmartVoltagetechnologyarehigh-density,low-cost,nonvolatile,read/writestoragesolutionforawiderangeofapplications.Theirsymmetrically-blockedarchitecture,flexiblevoltageandenhancedcyclingcapabilityprovideforhighlyflexi

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美國(guó)夏普微電子公司（SMA）

LH28F016SCT

Smartvoltage16MbitFlashMemory

16MbitFlashMemory

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美國(guó)夏普微電子公司（SMA）

LH28F016SU

16M(1M?16,2M?8)FlashMemory

INTRODUCTION Sharp’sLH28F016SU16MFlashMemoryisarevolutionaryarchitecturewhichenablesthedesignoftrulymobile,highperformance,personalcomputingandcommunicationproducts.Withinnovativecapabilities,5Vsinglevoltageoperationandveryhighread/writeperformance,theLH28F0

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美國(guó)夏普微電子公司（SMA）

LH28F016SUHT

16Mbit(1Mbitx16,2Mbitx8)5VSingleVoltageFlashMemory

16Mbit(1Mbitx16,2Mbitx8)5VSingleVoltageFlashMemory INTRODUCTION Thespecificationsintendedtogiveanoverviewofthechipfeature-setandoftheoperatingAC/DCspecifications.PleaserefertoUsersManualalso,toleamdetailusage.

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美國(guó)夏普微電子公司（SMA）

MS28F016SV

16-Mbit(1-Mbitx16,2-Mbitx8)FlashFileTMMEMORY

Intel’sVS/MS28F016SV,16-MbitFlashFiIeTMMemoryisthelatestmemberofIntel’shighdensity,highperformancememoryfamilyfortheIndustrial,SpecialEnvironment,andMilitarymarkets.ItsuserselectableVCCandVPP(SmartVoltageTechnology),innovativecapabilities,100compatibilitywitht

IntelIntel Corporation（Integrated Electronics Corporation)

英特爾英特爾（美國(guó)科技公司）

TE28F016

SMART3ADVANCEDBOOTBLOCK4-,8-,16-,32-MBITFLASHMEMORYFAMILY

INTRODUCTION ThisdatasheetcontainsthespecificationsfortheAdvancedBootBlockflashmemoryfamily,whichisoptimizedforlowpower,portablesystems.Thisfamilyofproductsfeatures1.65V–2.5Vor2.7V–3.6VI/OsandalowVCC/VPPoperatingrangeof2.7V–3.6Vforread,program,ande

IntelIntel Corporation（Integrated Electronics Corporation)

英特爾英特爾（美國(guó)科技公司）

VS28F016SV

16-Mbit(1-Mbitx16,2-Mbitx8)FlashFileTMMEMORY

Intel’sVS/MS28F016SV,16-MbitFlashFiIeTMMemoryisthelatestmemberofIntel’shighdensity,highperformancememoryfamilyfortheIndustrial,SpecialEnvironment,andMilitarymarkets.ItsuserselectableVCCandVPP(SmartVoltageTechnology),innovativecapabilities,100compatibilitywitht

IntelIntel Corporation（Integrated Electronics Corporation)

英特爾英特爾（美國(guó)科技公司）

詳細(xì)參數(shù)

  • 型號(hào)：

    LH28F016SCHT-ZN

  • 制造商：

    Sharp Microelectronics Corporation

  • 功能描述：

    FLASH MEMORY

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