LH28F020SU-N中文資料夏普微數(shù)據(jù)手冊PDF規(guī)格書

INTRODUCTION

Sharp’s LH28F020SU-N 2M Flash Memory is a revolutionary architecture which enables the design of truly mobile, high performance, personal computing and communication products. With innovative capabilities, 5.0 V single voltage operations and very high read/write performance, the LH28F020SU-N is also the ideal choice for designing embedded mass storage flash memory systems.

FEATURES

? 256K × 8 Bit Configuration

? 5 V Write/Erase Operation (5 V VPP)

– No Requirement for DC/DC Converter to Write Erase

? 80 ns Maximum Access Time

? 16 Independently Lockable Blocks (16K)

? 100,000 Erase Cycles per Block

? Automated Byte Write/Block Erase

– Command User Interface

– Status Register

? System Performance Enhancement

– Erase Suspend for Read

– Two-Byte Write

– Full Chip Erase

? Data Protection

– Hardware Erase/Write Lockout during Power Transitions

– Software Erase/Write Lockout

? Independently Lockable for Write/Erase on Each Block (Lock Block and Protect Set/Reset)

? 5 μA (TYP.) ICC in CMOS Standby

? State-of-the-Art 0.55 μm ETOX? Flash Technology

? Packages

– 32-Pin, 525 mil. SOP Package

– 32-Pin, 1.2 mm × 8 mm × 20 mm TSOP (Type I) Package