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LH5

Surface Mount Glass Passivated High Efficiency Rectifier

Good-Ark

GOOD-ARK Electronics

LH5116

CMOS 16K (2K x 8) Static RAM

DESCRIPTION TheLH5116/HarestaticRAMsorganizedas2,048×8bits.Itisfabricatedusingsilicon-gateCMOSprocesstechnology.Itfeatureshighspeedaccessinreadmodeusingoutputenable(tOE). FEATURES ?2,048×8bitorganization ?Accesstime:100ns(MAX.) ?Powerconsumption:

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美國夏普微電子公司(SMA)

LH5116-10

CMOS 16K (2K x 8) Static RAM

DESCRIPTION TheLH5116/HarestaticRAMsorganizedas2,048×8bits.Itisfabricatedusingsilicon-gateCMOSprocesstechnology.Itfeatureshighspeedaccessinreadmodeusingoutputenable(tOE). FEATURES ?2,048×8bitorganization ?Accesstime:100ns(MAX.) ?Powerconsumption:

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美國夏普微電子公司(SMA)

LH5116D-10

CMOS 16K (2K x 8) Static RAM

DESCRIPTION TheLH5116/HarestaticRAMsorganizedas2,048×8bits.Itisfabricatedusingsilicon-gateCMOSprocesstechnology.Itfeatureshighspeedaccessinreadmodeusingoutputenable(tOE). FEATURES ?2,048×8bitorganization ?Accesstime:100ns(MAX.) ?Powerconsumption:

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美國夏普微電子公司(SMA)

LH5116H

CMOS 16K (2K x 8) Static RAM

DESCRIPTION TheLH5116/HarestaticRAMsorganizedas2,048×8bits.Itisfabricatedusingsilicon-gateCMOSprocesstechnology.Itfeatureshighspeedaccessinreadmodeusingoutputenable(tOE). FEATURES ?2,048×8bitorganization ?Accesstime:100ns(MAX.) ?Powerconsumption:

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美國夏普微電子公司(SMA)

LH5116H-10

CMOS 16K (2K x 8) Static RAM

DESCRIPTION TheLH5116/HarestaticRAMsorganizedas2,048×8bits.Itisfabricatedusingsilicon-gateCMOSprocesstechnology.Itfeatureshighspeedaccessinreadmodeusingoutputenable(tOE). FEATURES ?2,048×8bitorganization ?Accesstime:100ns(MAX.) ?Powerconsumption:

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美國夏普微電子公司(SMA)

LH5116HD-10

CMOS 16K (2K x 8) Static RAM

DESCRIPTION TheLH5116/HarestaticRAMsorganizedas2,048×8bits.Itisfabricatedusingsilicon-gateCMOSprocesstechnology.Itfeatureshighspeedaccessinreadmodeusingoutputenable(tOE). FEATURES ?2,048×8bitorganization ?Accesstime:100ns(MAX.) ?Powerconsumption:

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美國夏普微電子公司(SMA)

LH5116HN-10

CMOS 16K (2K x 8) Static RAM

DESCRIPTION TheLH5116/HarestaticRAMsorganizedas2,048×8bits.Itisfabricatedusingsilicon-gateCMOSprocesstechnology.Itfeatureshighspeedaccessinreadmodeusingoutputenable(tOE). FEATURES ?2,048×8bitorganization ?Accesstime:100ns(MAX.) ?Powerconsumption:

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美國夏普微電子公司(SMA)

LH5116N-10

CMOS 16K (2K x 8) Static RAM

DESCRIPTION TheLH5116/HarestaticRAMsorganizedas2,048×8bits.Itisfabricatedusingsilicon-gateCMOSprocesstechnology.Itfeatureshighspeedaccessinreadmodeusingoutputenable(tOE). FEATURES ?2,048×8bitorganization ?Accesstime:100ns(MAX.) ?Powerconsumption:

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美國夏普微電子公司(SMA)

LH5116NA-10

16K CMOS STATIC RAM

GeneralDescription Features

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美國夏普微電子公司(SMA)

LH5116S

CMOS 16K (2K x 8) Static RAM

DESCRIPTION TheLH5116SisastaticRAMorganizedas2,048×8bits.Itisfabricatedusingsilicon-gateCMOSprocesstechnology.Itoperatesatalowsupplyvoltageof3V±10. FEATURES ?2,048×8bitorganization ?Accesstime:1000ns(MAX.) ?Low-powerconsumption: Operating:33mW(

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美國夏普微電子公司(SMA)

LH51256-10L

CMOS 256K (32K X 8) STATIC RAM

DESCRIPTION TheLH51256Lisa256KbitstaticRAMorganizedas32,768x8bitswhichprovideslow-powerstandbymode,Itisfabricatedusingsilicon-gateCMOSprocesstechnology.

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美國夏普微電子公司(SMA)

LH51256-12L

CMOS 256K (32K X 8) STATIC RAM

DESCRIPTION TheLH51256Lisa256KbitstaticRAMorganizedas32,768x8bitswhichprovideslow-powerstandbymode,Itisfabricatedusingsilicon-gateCMOSprocesstechnology.

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美國夏普微電子公司(SMA)

LH51256L

CMOS 256K (32K X 8) STATIC RAM

DESCRIPTION TheLH51256Lisa256KbitstaticRAMorganizedas32,768x8bitswhichprovideslow-powerstandbymode,Itisfabricatedusingsilicon-gateCMOSprocesstechnology.

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美國夏普微電子公司(SMA)

LH51256N-10L

CMOS 256K (32K X 8) STATIC RAM

DESCRIPTION TheLH51256Lisa256KbitstaticRAMorganizedas32,768x8bitswhichprovideslow-powerstandbymode,Itisfabricatedusingsilicon-gateCMOSprocesstechnology.

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美國夏普微電子公司(SMA)

LH51256N-12L

CMOS 256K (32K X 8) STATIC RAM

DESCRIPTION TheLH51256Lisa256KbitstaticRAMorganizedas32,768x8bitswhichprovideslow-powerstandbymode,Itisfabricatedusingsilicon-gateCMOSprocesstechnology.

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美國夏普微電子公司(SMA)

LH5164A

CMOS 64K (8K x 8) Static RAM

DESCRIPTION TheLH5164A/AHarestaticRAMsorganizedas8,192×8bits.Itisfabricatedusingsilicon-gateCMOSprocesstechnology. TheLH5164AHisdesignedforwidetemperaturerangefrom-40to+85°C. FEATURES ?8,192×8bitorganization ?Accesstimes:80/100ns(MAX.) ?Low-powerconsu

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美國夏普微電子公司(SMA)

LH5164A-10LF

64K Static RAM

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美國夏普微電子公司(SMA)

LH5164AH

CMOS 64K (8K x 8) Static RAM

DESCRIPTION TheLH5164A/AHarestaticRAMsorganizedas8,192×8bits.Itisfabricatedusingsilicon-gateCMOSprocesstechnology. TheLH5164AHisdesignedforwidetemperaturerangefrom-40to+85°C. FEATURES ?8,192×8bitorganization ?Accesstimes:80/100ns(MAX.) ?Low-powerconsu

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美國夏普微電子公司(SMA)

LH5164ASH

CMOS 64K (8K x 8) Static RAM

DESCRIPTION TheLH5164ASHisastaticRAMorganizedas8,192×8bits.Itisfabricatedusingsilicon-gateCMOSprocesstechnology. Itisdesignedfor2.5to5.5Vlowvoltageoperationandwidetemperaturerangefrom-40to+85°C. FEATURES ?8,192×8bitorganization ?Accesstime:500ns(

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美國夏普微電子公司(SMA)

詳細參數(shù)

  • 型號:

    LH5

  • 制造商:

    Thomas & Betts

  • 功能描述:

    1/2" NPT BLACK CORD GRIP

  • 功能描述:

    1/2 NPT BLACK CORD GRIP

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更多LH5供應商 更新時間2025-1-19 15:00:00