LM2103DR中文資料德州儀器數(shù)據(jù)手冊(cè)PDF規(guī)格書

1 Features

? Drives two N-channel MOSFETs in half-bridge

configuration

? 8-V typical undervoltage lockout on GVDD

? 107-V absolute maximum voltage on BST

? –19.5-V absolute maximum negative transient

voltage handling on SH

? 0.5-A/0.8-A peak source/sink currents

? 475-ns typical fixed internal dead-time

? Built-in cross conduction prevention

? 115-ns typical propagation delay

? Inverting input pin INL

2 Applications

? Brushless-DC (BLDC) motors

? Permanent magnet synchronous motors (PMSM)

? Servo and stepper motor drives

? Cordless vacuum cleaners

? Cordless garden and power tools

? E-bikes and e-scooters

? Battery test equipment

? Offline uninterruptible power supply (UPS)

? General-purpose MOSFET or IGBT driver

3 Description

The LM2103 is a compact, high-voltage gate driver

designed to drive both the high-side and the low-side

N-channel MOSFETs in a synchronous buck or a halfbridge

configuration. The INL inverting input allows

the driver to be used in either dual or single PWM

input applications.

The fixed dead-time and the –1-V DC and –19.5-

V transient negative voltage handling on the SH

pin improve the system robustness in high noise

applications. The LM2103 is available in an 8-pin

SOIC package compatible with industry standard

pinouts. Undervoltage lockout (UVLO) is provided on

both the low-side and the high-side power rails for

protection during power up and power down.