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LM74681DRRR中文資料德州儀器數(shù)據(jù)手冊(cè)PDF規(guī)格書

LM74681DRRR
廠商型號(hào)

LM74681DRRR

功能描述

LM74681 100V Ideal Diode Bridge Controller for PoE Powered Applications

絲印標(biāo)識(shí)

L74681

封裝外殼

WSON

文件大小

3.20314 Mbytes

頁(yè)面數(shù)量

27 頁(yè)

生產(chǎn)廠商 Texas Instruments
企業(yè)簡(jiǎn)稱

TI德州儀器

中文名稱

美國(guó)德州儀器公司官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

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更新時(shí)間

2025-2-6 8:18:00

LM74681DRRR規(guī)格書詳情

1 Features

? Input operating voltage range: 30V to 90V

– 100V absolute maximum

? 4× integrated gate drive control

? 165μA gate pull-up strength

? 100mA gate pull-down strength

? Ultra-low quiescent current of 0.27μA during

detection and classification phase (VIN1-IN2 < 23V)

? Linear gate regulation control for supply ORing

applications

– VTG_REG = 11mV

? Enable pin for user controlled device on/off

function

? –40°C to 125°C operating junction temperature

range

? Small footprint: 3mm × 3mm WSON-12

– Meets IPC-9592 spacing rules

2 Applications

? PoE powered devices (48V)

? Video surveillance: IP cameras

? Polarity agnostic power inputs

3 Description

The LM74681 is a 100V ideal diode bridge controller

capable of driving a MOSFET bridge, enabling

efficient low-loss bridge rectifier solutions in Power

over Ethernet (PoE) applications. It allows a Power

over Ethernet, powered device (PD) to receive

power from RJ-45 data pairs, spare pairs, or any

combination of the two, regardless of voltage polarity.

The integrated charge pump allows use of N-channel

MOSFETs, which are smaller and more cost effective

than P-channel MOSFETs for the same power level.

The LM74681 along with N-channel MOSFET bridge

can replace the conventional diode bridge and can

be conveniently implemented in both 2-pair and 4-

pair PoE PD systems. In the event of a power

source failure or short circuit, a rapid turn-off feature

reduces reverse current spikes. The device also

features an ultra-low quiescent current of 0.27μA,

which ensures that there is no data corruption during

the PoE PD detection and classification phase. This

device is characterized for operation over a junction

temperature range of –40°C to +125°C.

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