零件編號(hào) | 下載&訂購(gòu) | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
LMAK50N06 | N-Channel Enhancement Mode Field Effect Transistor | LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd 雷卯電子上海雷卯電子科技有限公司 | LEIDITECH | |
N-Channel Enhancement Mode Power MOSFET | LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd 雷卯電子上海雷卯電子科技有限公司 | LEIDITECH | ||
N-ChannelEnhancementModeFieldEffectTransistor | MCCMicro Commercial Components 美微科美微科半導(dǎo)體股份有限公司 | MCC | ||
N-Channel60-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司 | VBSEMI | ||
N-ChannelEnhancementModePowerMOSFET | BWTECH Bruckewell Technology LTD | BWTECH | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=50A@TC=25℃ ·DrainSourceVoltage- :VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.028Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
TMOSPOWERFETLOGICLEVEL50AMPERES60VOLTS TMOSE-FETPowerFieldEffectTransistorsD2PAKforSurfaceMountLogicLevelTMOS(L2TMOS) N–ChannelEnhancement–ModeSiliconGate TheseTMOSPowerFETsaredesignedforhighspeed,lowlosspowerswitchingapplicationssuchasswitchingregulators,converters,solenoidandrelaydrivers.This | Motorola Motorola, Inc | Motorola | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=50A@TC=25℃ ·DrainSourceVoltage- :VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.028Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=42A@TC=25℃ ·DrainSourceVoltage- :VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.028Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
TMOSPOWERFET42AMPERES60VOLTS TMOSVisanewtechnologydesignedtoachieveanon–resistanceareaproductaboutone–halfthatofstandardMOSFETs.Thisnewtechnologymorethandoublesthepresentcelldensityofour50and60voltTMOSdevices.JustaswithourTMOSE–FETdesigns,TMOSVisdesignedtowithstandhighenergy | Motorola Motorola, Inc | Motorola | ||
N??hannelPowerMOSFET | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
TMOSPOWERFET42AMPERES60VOLTS TMOSVisanewtechnologydesignedtoachieveanon–resistanceareaproductaboutone–halfthatofstandardMOSFETs.Thisnewtechnologymorethandoublesthepresentcelldensityofour50and60voltTMOSdevices.JustaswithourTMOSE–FETdesigns,TMOSVisdesignedtowithstandhighenergy | Motorola Motorola, Inc | Motorola | ||
N??hannelPowerMOSFET | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
TMOSPOWERFET42AMPERES60VOLTSRDS(on)=0.028OHM TMOSPOWERFET42AMPERES60VOLTSRDS(on)=0.028OHM N–ChannelEnhancement–ModeSiliconGate TMOSVisanewtechnologydesignedtoachieveanon–resistanceareaproductaboutone–halfthatofstandardMOSFETs.Thisnewtechnologymorethandoublesthepresentcelldensityofour50an | Motorola Motorola, Inc | Motorola | ||
TMOSPOWERFET42AMPERES60VOLTSRDS(on)=0.032OHM TMOSPOWERFET42AMPERES60VOLTSRDS(on)=0.032OHM N–ChannelEnhancement–ModeSiliconGate TMOSVisanewtechnologydesignedtoachieveanon–resistanceareaproductaboutone–halfthatofstandardMOSFETs.Thisnewtechnologymorethandoublesthepresentcelldensityofour50and | Motorola Motorola, Inc | Motorola | ||
TMOSPOWERFET50AMPERES60VOLTSRDS(on)=0.028OHM TMOSE-FET?PowerFieldEffectTransistor N–ChannelEnhancement–ModeSiliconGate ThisadvancedTMOSE–FETisdesignedtowithstandhighenergyintheavalancheandcommutationmodes.Thenewenergyefficientdesignalsooffersadrain–to–sourcediodewithafastrecoverytime.Designedfo | Motorola Motorola, Inc | Motorola | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=50A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=25mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
TMOSPOWERFET50AMPERES60VOLTSRDS(on)=0.028OHM TMOSE-FET?PowerFieldEffectTransistor N–ChannelEnhancement–ModeSiliconGate ThisadvancedTMOSE–FETisdesignedtowithstandhighenergyintheavalancheandcommutationmodes.Thenewenergyefficientdesignalsooffersadrain–to–sourcediodewithafastrecoverytime.Designedfo | Motorola Motorola, Inc | Motorola | ||
N-Channel60-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司 | VBSEMI | ||
N-Channel60-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司 | VBSEMI |
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
Leiditech(雷卯電子) |
23+ |
TO252 |
6000 |
誠(chéng)信服務(wù),絕對(duì)原裝原盤 |
詢價(jià) | ||
24+ |
N/A |
79000 |
一級(jí)代理-主營(yíng)優(yōu)勢(shì)-實(shí)惠價(jià)格-不悔選擇 |
詢價(jià) | |||
LAIRD |
20+ |
射頻元件 |
255 |
就找我吧!--邀您體驗(yàn)愉快問購(gòu)元件! |
詢價(jià) | ||
Pulse |
23+ |
NA |
11266 |
確保原裝正品,專注終端客戶一站式BOM配單 |
詢價(jià) | ||
NSC |
2015+ |
SOP/DIP |
19889 |
一級(jí)代理原裝現(xiàn)貨,特價(jià)熱賣! |
詢價(jià) | ||
NS |
24+ |
ZIP |
500 |
詢價(jià) | |||
NS |
2020+ |
4500 |
百分百原裝正品 真實(shí)公司現(xiàn)貨庫(kù)存 本公司只做原裝 可 |
詢價(jià) | |||
NS |
24+ |
ZIP |
2000 |
全新進(jìn)口原裝現(xiàn)貨熱賣! |
詢價(jià) | ||
NS/國(guó)半 |
23+ |
13000 |
原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種 |
詢價(jià) | |||
NS/美國(guó)國(guó)半 |
24+ |
12320 |
原裝正品 力挺實(shí)單 |
詢價(jià) |
相關(guān)規(guī)格書
更多- LMAK50N06A
- LMAK50P04
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相關(guān)庫(kù)存
更多- LMAK50N10
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