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LMG3426R030RQZR

LMG342xR030 600V 30mΩ GaN FET With Integrated Driver, Protection, and Temperature Reporting

1Features ?QualifiedforJEDECJEP180forhard-switching topologies ?600VGaN-on-SiFETwithintegratedgatedriver –Integratedhighprecisiongatebiasvoltage –200V/nsFEThold-off –2.2MHzswitchingfrequency –20V/nsto150V/nsslewrateforoptimizationof switchingperformancea

TI1Texas Instruments

德州儀器

LMG3426R030RQZR

LMG342xR030 600V 30mΩ GaN FET With Integrated Driver, Protection, and Temperature Reporting

1Features ?QualifiedforJEDECJEP180forhard-switching topologies ?600VGaN-on-SiFETwithintegratedgatedriver –Integratedhighprecisiongatebiasvoltage –200V/nsFEThold-off –2.2MHzswitchingfrequency –20V/nsto150V/nsslewrateforoptimizationof switchingperformancea

TI1Texas Instruments

德州儀器

LMG3426R030

LMG342xR030600V30mΩGaNFETWithIntegratedDriver,Protection,andTemperatureReporting

1Features ?QualifiedforJEDECJEP180forhard-switching topologies ?600VGaN-on-SiFETwithintegratedgatedriver –Integratedhighprecisiongatebiasvoltage –200V/nsFEThold-off –2.2MHzswitchingfrequency –20V/nsto150V/nsslewrateforoptimizationof switchingperformancea

TI1Texas Instruments

德州儀器

LMG3426R030

LMG342xR030600V30mΩGaNFETWithIntegratedDriver,Protection,andTemperatureReporting

1Features ?QualifiedforJEDECJEP180forhard-switching topologies ?600VGaN-on-SiFETwithintegratedgatedriver –Integratedhighprecisiongatebiasvoltage –200V/nsFEThold-off –2.2MHzswitchingfrequency –20V/nsto150V/nsslewrateforoptimizationof switchingperformancea

TI1Texas Instruments

德州儀器

LMG3426R030

LMG342xR030600V30mΩGaNFETWithIntegratedDriver,Protection,andTemperatureReporting

1Features ?QualifiedforJEDECJEP180forhard-switching topologies ?600VGaN-on-SiFETwithintegratedgatedriver –Integratedhighprecisiongatebiasvoltage –200V/nsFEThold-off –2.2MHzswitchingfrequency –20V/nsto150V/nsslewrateforoptimizationof switchingperformancea

TI1Texas Instruments

德州儀器

LMG3426R030

LMG342xR030600V30mΩGaNFETWithIntegratedDriver,Protection,andTemperatureReporting

1Features ?QualifiedforJEDECJEP180forhard-switching topologies ?600VGaN-on-SiFETwithintegratedgatedriver –Integratedhighprecisiongatebiasvoltage –200V/nsFEThold-off –2.2MHzswitchingfrequency –20V/nsto150V/nsslewrateforoptimizationof switchingperformancea

TI1Texas Instruments

德州儀器

LMG3426R030

LMG342xR030600V30mΩGaNFETWithIntegratedDriver,Protection,andTemperatureReporting

1Features ?QualifiedforJEDECJEP180forhard-switching topologies ?600VGaN-on-SiFETwithintegratedgatedriver –Integratedhighprecisiongatebiasvoltage –200V/nsFEThold-off –2.2MHzswitchingfrequency –20V/nsto150V/nsslewrateforoptimizationof switchingperformancea

TI1Texas Instruments

德州儀器

LMG3426R030RQZT

LMG342xR030600V30mΩGaNFETWithIntegratedDriver,Protection,andTemperatureReporting

1Features ?QualifiedforJEDECJEP180forhard-switching topologies ?600VGaN-on-SiFETwithintegratedgatedriver –Integratedhighprecisiongatebiasvoltage –200V/nsFEThold-off –2.2MHzswitchingfrequency –20V/nsto150V/nsslewrateforoptimizationof switchingperformancea

TI1Texas Instruments

德州儀器

LMG3426R030RQZT

LMG342xR030600V30mΩGaNFETWithIntegratedDriver,Protection,andTemperatureReporting

1Features ?QualifiedforJEDECJEP180forhard-switching topologies ?600VGaN-on-SiFETwithintegratedgatedriver –Integratedhighprecisiongatebiasvoltage –200V/nsFEThold-off –2.2MHzswitchingfrequency –20V/nsto150V/nsslewrateforoptimizationof switchingperformancea

TI1Texas Instruments

德州儀器

供應(yīng)商型號品牌批號封裝庫存備注價格
Texas Instruments
23+/24+
54-VQFN
8600
只供原裝進(jìn)口公司現(xiàn)貨+可訂貨
 詢價
TI/德州儀器
23+
8355
只做原裝現(xiàn)貨/實(shí)單可談/支持含稅拆樣
 詢價
TI
24+
NA
9101
只做原裝正品,專注終端BOM表整單供應(yīng)
 詢價
TI德州儀器
22+
24000
原裝正品現(xiàn)貨,實(shí)單可談,量大價優(yōu)
 詢價
TI(德州儀器)
23+
15000
專業(yè)幫助客戶找貨 配單,誠信可靠!
 詢價
NSC
2023+
SOP8
50000
原裝現(xiàn)貨
 詢價
原廠正品
23+
DIP16
5000
原裝正品,假一罰十
 詢價
NS
2015+
SOP/DIP
19889
一級代理原裝現(xiàn)貨,特價熱賣!
 詢價
NS
24+
TO-263
2987
絕對全新原裝現(xiàn)貨供應(yīng)!
 詢價
2023+
3000
進(jìn)口原裝現(xiàn)貨
 詢價
更多LMG3426R030RQZR供應(yīng)商 更新時間2025-1-6 14:44:00

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