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LTMNTM-850

MOLDED,SELF-RETAININGLEDMOUNT

etc2List of Unclassifed Manufacturers

etc未分類制造商etc2未分類制造商

M-850

MARINEIGNITIONSWITCHES

Description Impact-resistantbodycannotrustorcorrode.Ignitionswitch operatesliketraditionalswitches:the‘Run’positionactuates radio,radar,blower,lights,andotheraccessories.Fitsmost OEMapplications. FeaturesandBenefits ?Replacesmanyboatignitionswitches. Fitsint

Littelfuselittelfuse

力特力特公司

MA850

MagAlphaCommunicationKit

MPSMonolithic Power Systems Inc.

美國芯源美國芯源系統(tǒng)有限公司

MA850

RotaryKnobKitfortheMagAlpha

MPSMonolithic Power Systems Inc.

美國芯源美國芯源系統(tǒng)有限公司

MA850

RotaryKnobKitfortheMagAlpha

MPSMonolithic Power Systems Inc.

美國芯源美國芯源系統(tǒng)有限公司

MA850

RotaryKnobKitfortheMagAlpha

MPSMonolithic Power Systems Inc.

美國芯源美國芯源系統(tǒng)有限公司

MAX850

Low-Noise,Regulated,NegativeCharge-PumpPowerSuppliesforGaAsFETBias

GeneralDescription TheMAX850–MAX853low-noise,inverting,chargepumppowersuppliesareidealforbiasingGaAsFETsincellulartelephonetransmitteramplifiers. TheMAX850–MAX852offerbothpreset(-4.1V)andadjustable(-0.5Vto-9.0V)outputvoltages.TheMAX853usesanexternalpositiveco

MaximMaxim Integrated Products

美信美信半導(dǎo)體

MAX850ESA

Low-Noise,Regulated,NegativeCharge-PumpPowerSuppliesforGaAsFETBias

GeneralDescription TheMAX850–MAX853low-noise,inverting,chargepumppowersuppliesareidealforbiasingGaAsFETsincellulartelephonetransmitteramplifiers. TheMAX850–MAX852offerbothpreset(-4.1V)andadjustable(-0.5Vto-9.0V)outputvoltages.TheMAX853usesanexternalpositiveco

MaximMaxim Integrated Products

美信美信半導(dǎo)體

MAX850ISA

Low-Noise,Regulated,NegativeCharge-PumpPowerSuppliesforGaAsFETBias

GeneralDescription TheMAX850–MAX853low-noise,inverting,chargepumppowersuppliesareidealforbiasingGaAsFETsincellulartelephonetransmitteramplifiers. TheMAX850–MAX852offerbothpreset(-4.1V)andadjustable(-0.5Vto-9.0V)outputvoltages.TheMAX853usesanexternalpositiveco

MaximMaxim Integrated Products

美信美信半導(dǎo)體

MBR850

8.0ASCHOTTKYBARRIERRECTIFIER

Features ●SchottkyBarrierChip ●GuardRingDieConstructionfor TransientProtection ●LowPowerLoss,HighEfficiency ●HighSurgeCapability ●HighCurrentCapabilityandLowForward VoltageDrop ●ForUseinLowVoltage,HighFrequency Inverters,FreeWheeling,andPolarity

DIODES

Diodes Incorporated

MBR850

SCHOTTKYBARRIERRECTIFIER

VOLTAGERANGE:30-100VCURRENT:8.0A FEATURES ◇Highsurgecapacity. ◇Foruseinlowvoltage,highfrequencyinverters,freewheeling,andpolarityprotectionapplications. ◇Metalsiliconjunction,majoritycarrierconduction. ◇Highcurrentcapacity,lowforwardvoltagedrop. ◇Guard

BILINChangzhou Galaxy Century Microelectronics Co.,Ltd.

銀河微電常州銀河世紀微電子股份有限公司

MBR850

WideTemperatureRangeandHighTjmSchottkyBarrierRectifiers

FEATURES *Metalofsiliconrectifier,majoritycarrierconducton *Guardringfortransientprotection *Lowpowerloss,highefficiency *Highcurrentcapability,lowVF *Highsurgecapacity *Foruseinlowvoltage,highfrequencyinverters,freewhelling,andpolarityprotectionapplica

SIRECTIFIERSirectifier Semiconductors

矽萊克電子江蘇矽萊克電子科技有限公司

MBR850

SCHOTTKYBARRIERRECTIFIERS

FEATURES ●Metalofsiliconrectifier,majoritycarrierconduction ●Guardringfortransientprotection ●Lowpowerloss,highefficiency ●Highcurrentcapability,lowVF ●Highsurgecapacity ●PlasticpackagehasULflammabilityclassification94V-0 ●Foruseinlowvoltage,highfrequenc

HY

HY ELECTRONIC CORP.

MBR850

SchottkyBarrierRectifierReverseVoltage40to200VForwardCurrent8.0A

ReverseVoltage40to200V ForwardCurrent8.0A Features ?LowPowerLoss,HighEfficiency ?LowForwardVoltageDrop ?HighCurrentCapability ?LeadandbodyaccordingwithRoHSstandard

DACHANGRugao Dachang Electronics Co., Ltd

大昌電子如皋市大昌電子有限公司

MBR850

SCHOTTKYBARRIERRECTIFIERS

VOLTAGE40to200VoltsCURRENT8Amperes FEATURES ?PlasticpackagehasUnderwritersLaboratory FlammabilityClassification94V-Outilizing FlameRetardantEpoxyMoldingCompound. ?ExceedsenvironmentalstandardsofMIL-S-19500/228 ?Lowpowerloss,highefficiency. ?Lowforwrdvol

PANJITPan Jit International Inc.

強茂股份有限公司

MBR850

8.0ASCHOTTKYBARRIERRECTIFIER

Features ●SchottkyBarrierChip ●GuardRingDieConstructionfor TransientProtection ●LowPowerLoss,HighEfficiency ●HighSurgeCapability ●HighCurrentCapabilityandLowForward VoltageDrop ●ForUseinLowVoltage,HighFrequency Inverters,FreeWheeling,andPolarity

KERSEMI

Kersemi Electronic Co., Ltd.

MBR850

8.0ASCHOTTKYBARRIERRECTIFIER

Features ●SchottkyBarrierChip ●GuardRingDieConstructionfor TransientProtection ●LowPowerLoss,HighEfficiency ●HighSurgeCapability ●HighCurrentCapabilityandLowForward VoltageDrop ●ForUseinLowVoltage,HighFrequency Inverters,FreeWheeling,andPolarity

KERSEMI

Kersemi Electronic Co., Ltd.

MBR850

SchottkyBarrierRectifiers

VOLTAGERANGE:30-100VCURRENT:8.0A Features ◇Highsurgecapacity. ◇Foruseinlowvoltage,highfrequencyinverters,freewheeling,andpolarityprotectionapplications. ◇Metalsiliconjunction,majoritycarrierconduction. ◇Highcurrentcapacity,lowforwardvoltagedrop. ◇Thepl

LUGUANGShenzhen Luguang Electronic Technology Co., Ltd

魯光電子深圳市魯光電子科技有限公司

MBR850

8.0ASCHOTTKYBARRIERDIODE

Features ●ClassificationRating94V-O ●PlasticCaseMaterialhasULFlammability ●GuardRingDieConstruction ●ForUseinLowVoltageApplication ●LowPowerLoss,HighEfficiency ●IdeallySuitedforAutomaticAssembly ●SchottkyBarrierChip

ZSELECZibo Seno Electronic Engineering Co.,Ltd

淄博圣諾電子淄博圣諾電子工程有限公司

MBR850

GuardRingDieConstructionforTransientProtection

Features ●SchottkyBarrierChip ●GuardRingDieConstructionfor TransientProtection ●LowPowerLoss,HighEfficiency ●HighSurgeCapability ●HighCurrentCapabilityandLowForward VoltageDrop ●ForUseinLowVoltage,HighFrequency Inverters,FreeWheeling,andPolarity

KERSEMI

Kersemi Electronic Co., Ltd.

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RFBay
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rf-bay
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