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LP7612中文資料FILTRONIC數(shù)據(jù)手冊(cè)PDF規(guī)格書

LP7612
廠商型號(hào)

LP7612

功能描述

HIGH DYNAMIC RANGE PHEMT

文件大小

39.35 Kbytes

頁面數(shù)量

2

生產(chǎn)廠商 Filtronic Compound Semiconductors
企業(yè)簡(jiǎn)稱

FILTRONIC

中文名稱

Filtronic Compound Semiconductors官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

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更新時(shí)間

2025-1-5 18:26:00

LP7612規(guī)格書詳情

DESCRIPTION AND APPLICATIONS

The LP7612 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.25 mm by 200 mm Schottky barrier gate. The recessed “mushroom” gate structure minimizes parasitic gate-source and gate resistances. The epitaxial structure and processing have been optimized for high dynamic range. The LP7612 also features Si3N4 passivation and is available in a P70 ceramic package.

Typical applications include high dynamic range receiver preamplifiers for commercial applications including Cellular/PCS systems, WLL and WLAN systems, and broadband amplifiers.

FEATURES

? 21 dBm Output Power at 1-dB Compression at 18 GHz

? 9.5 dB Power Gain at 18 GHz

? 1.0 dB Noise Figure at 18 GHz

? 55 Power-Added Efficiency

產(chǎn)品屬性

  • 型號(hào):

    LP7612

  • 制造商:

    FILTRONIC

  • 制造商全稱:

    FILTRONIC

  • 功能描述:

    HIGH DYNAMIC RANGE PHEMT

供應(yīng)商 型號(hào) 品牌 批號(hào) 封裝 庫(kù)存 備注 價(jià)格
LOWPOWER(微源半導(dǎo)體)
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