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LPD200中文資料FILTRONIC數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

LPD200
廠商型號(hào)

LPD200

功能描述

HIGH PERFORMANCE PHEMT

文件大小

30.4 Kbytes

頁(yè)面數(shù)量

2 頁(yè)

生產(chǎn)廠商 Filtronic Compound Semiconductors
企業(yè)簡(jiǎn)稱

FILTRONIC

中文名稱

Filtronic Compound Semiconductors官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二

更新時(shí)間

2025-1-24 23:00:00

LPD200規(guī)格書(shū)詳情

DESCRIPTION AND APPLICATIONS

The LPD200 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.25 mm by 200 mm Schottky barrier gate. The recessed “mushroom” gate structure minimizes parasitic gate-source and gate resistances. The epitaxial structure and processing have been optimized for high dynamic range. The LPD200 also features Si3N4 passivation and is available in various packages, such as ceramic P70 and other plastic packages.

Typical applications include use in low noise, broadband amplifiers.

FEATURES

? 21 dBm Output Power at 1-dB Compression at 18 GHz

? 12 dB Power Gain at 18 GHz

? 1.0 dB Noise Figure at 18 GHz

? 55 Power-Added Efficiency

產(chǎn)品屬性

  • 型號(hào):

    LPD200

  • 制造商:

    FILTRONIC

  • 制造商全稱:

    FILTRONIC

  • 功能描述:

    HIGH PERFORMANCE PHEMT

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19960
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