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MMD65R380QRH

650V0.38ohmN-channelMOSFET

MGCHIP

MagnaChip Semiconductor.

MMD65R380QRH

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=10.6A@TC=25℃ ·DrainSourceVoltage :VDSS=650V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.38Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

MMF65R380Q

650V0.38ohmN-channelMOSFET

MGCHIP

MagnaChip Semiconductor.

MMF65R380QTH

650V0.38ohmN-channelMOSFET

MGCHIP

MagnaChip Semiconductor.

MMP65R380Q

650V0.38ohmN-channelMOSFET

MGCHIP

MagnaChip Semiconductor.

MMP65R380QTH

650V0.38ohmN-channelMOSFET

MGCHIP

MagnaChip Semiconductor.

SLF65R380SS

650VN-ChannelMOSFET

MAPLESMIShenzhen Meipusen Semiconductor Co., Ltd

美普森深圳市美普森半導體有限公司

TPA65R380C

650VSuper-JunctionPowerMOSFET

WUMCWuxi Unigroup Microelectronics Company

紫光國微紫光國芯微電子股份有限公司

TPA65R380C

650VSuper-JunctionPowerMOSFET

WUMCWuxi Unigroup Microelectronics Company

紫光國微紫光國芯微電子股份有限公司

TPA65R380D

650VSuper-junctionPowerMOSFET

Description 650VSuper-junctionPowerMOSFET Super-junctionpowerMOSFETisarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtotheSJprinciple.ThedeeptrenchSJMOSFETprovideanextremelylowswitching,communicationandconductionlossesdevicewithhighestrobustness

WUMCWuxi Unigroup Microelectronics Company

紫光國微紫光國芯微電子股份有限公司

TPA65R380D

650VSuper-junctionPowerMOSFET

Description 650VSuper-junctionPowerMOSFET Super-junctionpowerMOSFETisarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtotheSJprinciple.ThedeeptrenchSJMOSFETprovideanextremelylowswitching,communicationandconductionlossesdevicewithhighestrobustness

WUMCWuxi Unigroup Microelectronics Company

紫光國微紫光國芯微電子股份有限公司

TPA65R380D

650VSuper-junctionPowerMOSFET

Description 650VSuper-junctionPowerMOSFET Super-junctionpowerMOSFETisarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtotheSJprinciple.ThedeeptrenchSJMOSFETprovideanextremelylowswitching,communicationandconductionlossesdevicewithhighestrobustness

WUMCWuxi Unigroup Microelectronics Company

紫光國微紫光國芯微電子股份有限公司

TPB65R380C

650VSuper-JunctionPowerMOSFET

WUMCWuxi Unigroup Microelectronics Company

紫光國微紫光國芯微電子股份有限公司

TPB65R380C

650VSuper-JunctionPowerMOSFET

WUMCWuxi Unigroup Microelectronics Company

紫光國微紫光國芯微電子股份有限公司

TPC65R380C

650VSuper-JunctionPowerMOSFET

WUMCWuxi Unigroup Microelectronics Company

紫光國微紫光國芯微電子股份有限公司

TPC65R380C

650VSuper-JunctionPowerMOSFET

WUMCWuxi Unigroup Microelectronics Company

紫光國微紫光國芯微電子股份有限公司

TPD65R380C

650VSuper-JunctionPowerMOSFET

WUMCWuxi Unigroup Microelectronics Company

紫光國微紫光國芯微電子股份有限公司

TPD65R380C

650VSuper-JunctionPowerMOSFET

WUMCWuxi Unigroup Microelectronics Company

紫光國微紫光國芯微電子股份有限公司

TPD65R380D

650VSuper-junctionPowerMOSFET

Description 650VSuper-junctionPowerMOSFET Super-junctionpowerMOSFETisarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtotheSJprinciple.ThedeeptrenchSJMOSFETprovideanextremelylowswitching,communicationandconductionlossesdevicewithhighestrobustness

WUMCWuxi Unigroup Microelectronics Company

紫光國微紫光國芯微電子股份有限公司

TPD65R380D

650VSuper-junctionPowerMOSFET

Description 650VSuper-junctionPowerMOSFET Super-junctionpowerMOSFETisarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtotheSJprinciple.ThedeeptrenchSJMOSFETprovideanextremelylowswitching,communicationandconductionlossesdevicewithhighestrobustness

WUMCWuxi Unigroup Microelectronics Company

紫光國微紫光國芯微電子股份有限公司

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6000
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更多LSF65R380HT供應商 更新時間2025-1-19 15:00:00