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MBR835

AxialLeadRectifiers

AxialLeadRectifiers ...employingtheSchottkyBarrierprincipleinalargeareametal?to?siliconpowerdiode.State?of?the?artgeometryfeaturesepitaxialconstructionwithoxidepassivationandmetaloverlapcontact.Ideallysuitedforuseasrectifiersinlow?voltage,high?frequencyinvert

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MBR835

SCHOTTKYBARRIERRECTIFIER

VOLTAGERANGE:30-100VCURRENT:8.0A FEATURES ◇Highsurgecapacity. ◇Foruseinlowvoltage,highfrequencyinverters,freewheeling,andpolarityprotectionapplications. ◇Metalsiliconjunction,majoritycarrierconduction. ◇Highcurrentcapacity,lowforwardvoltagedrop. ◇Guard

BILINGalaxy Semi-Conductor Holdings Limited

銀河微電常州銀河世紀(jì)微電子股份有限公司

MBR835

WideTemperatureRangeandHighTjmSchottkyBarrierRectifiers

FEATURES *Metalofsiliconrectifier,majoritycarrierconducton *Guardringfortransientprotection *Lowpowerloss,highefficiency *Highcurrentcapability,lowVF *Highsurgecapacity *Foruseinlowvoltage,highfrequencyinverters,free whelling,andpolarityprotectionapp

SIRECTIFIERSirectifier Semiconductors

矽萊克電子江蘇矽萊克電子科技有限公司

MBR835

HighTjmLowIRRMSchottkyBarrierDiodes

SIRECTIFIERSirectifier Semiconductors

矽萊克電子江蘇矽萊克電子科技有限公司

MBR835

8.0ASCHOTTKYBARRIERRECTIFIER

Features ●SchottkyBarrierChip ●GuardRingDieConstructionfor TransientProtection ●LowPowerLoss,HighEfficiency ●HighSurgeCapability ●HighCurrentCapabilityandLowForward VoltageDrop ●ForUseinLowVoltage,HighFrequency Inverters,FreeWheeling,andPolarity

KERSEMI

Kersemi Electronic Co., Ltd.

MBR835

8.0ASCHOTTKYBARRIERRECTIFIER

Features ●SchottkyBarrierChip ●GuardRingDieConstructionfor TransientProtection ●LowPowerLoss,HighEfficiency ●HighSurgeCapability ●HighCurrentCapabilityandLowForward VoltageDrop ●ForUseinLowVoltage,HighFrequency Inverters,FreeWheeling,andPolarity

KERSEMI

Kersemi Electronic Co., Ltd.

MBR835

SchottkyBarrierRectifiers

VOLTAGERANGE:30-100VCURRENT:8.0A Features ◇Highsurgecapacity. ◇Foruseinlowvoltage,highfrequencyinverters,freewheeling,andpolarityprotectionapplications. ◇Metalsiliconjunction,majoritycarrierconduction. ◇Highcurrentcapacity,lowforwardvoltagedrop. ◇Thepl

LUGUANGShenzhen Luguang Electronic Technology Co., Ltd

魯光電子深圳市魯光電子科技有限公司

MBR835

8.0ASCHOTTKYBARRIERRECTIFIER

Features ●SchottkyBarrierChip ●GuardRingDieConstructionfor TransientProtection ●LowPowerLoss,HighEfficiency ●HighSurgeCapability ●HighCurrentCapabilityandLowForward VoltageDrop ●ForUseinLowVoltage,HighFrequency Inverters,FreeWheeling,andPolarity

KERSEMI

Kersemi Electronic Co., Ltd.

MBR835RL

AxialLeadRectifiers

AxialLeadRectifiers ...employingtheSchottkyBarrierprincipleinalargeareametal?to?siliconpowerdiode.State?of?the?artgeometryfeaturesepitaxialconstructionwithoxidepassivationandmetaloverlapcontact.Ideallysuitedforuseasrectifiersinlow?voltage,high?frequencyinvert

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MBRB835

SCHOTTKYBARRIERRECTIFIER

VOLTAGERANGE:30-100VCURRENT:8.0A FEATURES ◇Highsurgecapacity. ◇Foruseinlowvoltage,highfrequencyinverters,free wheeling,andpolarityprotectionapplications. ◇Metalsiliconjunction,majoritycarrierconduction. ◇Highcurrentcapacity,lowforwardvoltagedrop. ◇Gu

BILINGalaxy Semi-Conductor Holdings Limited

銀河微電常州銀河世紀(jì)微電子股份有限公司

詳細(xì)參數(shù)

  • 型號：

    LSM835

  • 制造商：

    Microsemi Corporation

  • 功能描述：

    8.0A, 35V, VF=0.52V - Tape and Reel

  • 功能描述：

    DIODE SCHOTTKY 8A 35V SMCG

供應(yīng)商型號品牌批號封裝庫存備注價格
Microsemi
16+
DO-214AB
88000
鍏ㄦ柊鍘熻鐜拌揣/浠鋒牸鍙皥!
 詢價
Microsemi
20+
DO-214AB
36800
原裝優(yōu)勢主營型號-可開原型號增稅票
 詢價
Microsemi
1942+
N/A
908
加我qq或微信，了解更多詳細(xì)信息,體驗(yàn)一站式購物
 詢價
MICROSEMI
1809+
DO-214
1675
就找我吧!--邀您體驗(yàn)愉快問購元件!
 詢價
Microsemi
24+
DO-214AB
88000
原裝現(xiàn)貨假一賠十
 詢價
MICROSEMI/美高森美
2019+PB
DO-214AB
88000
大量庫存-特價
 詢價
MICROSEMI/美高森美
新年份
DO-214AB
88000
原裝正品大量現(xiàn)貨,要多可發(fā)貨,實(shí)單帶接受價來談!
 詢價
24+
N/A
56000
一級代理-主營優(yōu)勢-實(shí)惠價格-不悔選擇
 詢價
Microchip Technology
25+
DO-215AB
9350
獨(dú)立分銷商 公司只做原裝 誠心經(jīng)營 免費(fèi)試樣正品保證
 詢價
Microsemi
2410+
DO214AB
88000
優(yōu)勢代理渠道 原裝現(xiàn)貨 可全系列訂貨
 詢價
更多LSM835供應(yīng)商 更新時間2025-4-25 8:30:00

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