LTC3786集成電路（IC）的PMIC-穩(wěn)壓器-DCDC開關(guān)式控制器規(guī)格書PDF中文資料

LTC3786屬于集成電路（IC）的PMIC-穩(wěn)壓器-DCDC開關(guān)式控制器。由亞德諾半導體技術(shù)有限公司制造生產(chǎn)的LTC3786DC-DC 開關(guān)控制器PMIC（電源管理集成電路）DC 到 DC 開關(guān)式控制器是用于高效率電路的穩(wěn)壓 IC，其配置為生成高于（突升或步升）或低于（突降或步降）輸入電源的輸出電源電壓。其他拓撲結(jié)構(gòu)可能包括：降壓-升壓、反激、正激、Cuk、SEPIC、全橋、半橋和推挽式。這些器件不同于需要最小電壓并“燒盡”多余電壓的線性穩(wěn)壓器。

FEATURES

? GaN Drive Technology fully Optimized for GaN FETs

? Output Voltage up to 100V

? Wide VIN Range: 4V to 60V and Operates Down to 1V

After Start-Up

? No Catch, Clamp, or Bootstrap Diodes Needed

? Internal Smart Bootstrap Switches Prevent

Overcharging of High-Side Driver Supplies

? Resistor Adjustable Dead Times

? Split Output Gate Drivers for Adjustable Turn-On

and Turn-Off Driver Strengths

? Accurate Adjustable Driver Voltage and UVLO

? Low Operating IQ: 15μA

? Programmable Frequency (100kHz to 3MHz)

? Synchronizable Frequency (100kHz to 3MHz)

? Spread Spectrum Frequency Modulation

? 40-Lead (6mm × 6mm), Side Wettable, QFN Package

? AEC-Q100 Qualified for Automotive Applications

APPLICATIONS

? Automotive and Industrial Power Systems

? Military Avionics and Medical Systems

? Telecommunications Power Systems

GENERAL DESCRIPTION

The LTC?7892 is a high-performance dual boost

DC-to-DC switching regulator controller that drives all

N-channel synchronous gallium nitride (GaN) field effect

transistor (FET) power stages with output voltages up to

100V. The LTC7892 solves many of the challenges

traditionally faced when using GaN FETs. The LTC7892

simplifies the application design while requiring no

protection diodes and no other additional external

components compared to a silicon metal-oxidesemiconductor

field effect transistor (MOSFET) solution.

The Internal smart bootstrap switches prevent

overcharging of the BOOSTx pin to the SWx pin

the high-side driver supplies during dead times,

protecting the gate of the top GaN FET. The dead times

of the LTC7892 can optionally be optimized with

external resistors for margin or to tailor the application

for higher efficiency and allowing for high-frequency

operation.

The gate drive voltage of the LTC7892 can be precisely

adjusted from 4V to 5.5V to optimize performance and

allow the use of different GaN FETs or even logic-level

MOSFETs. When biased from the boost converter

regulator output, the LTC7892 can operate from an

input supply as low as 1V after start-up.