LV1721E50R中文資料飛利浦數(shù)據(jù)手冊PDF規(guī)格書

DESCRIPTION

NPN silicon planar epitaxial microwave power transistor in a SOT445A metal ceramic flange package with the emitter connected to the flange.

FEATURES

? Interdigitated structure provides high emitter efficiency

? Diffused emitter ballasting resistor provides excellent

current sharing and withstanding a high VSWR

? Gold metallization realizes very stable characteristics

and excellent lifetime

? Multicell geometry gives good balance of dissipated

power and low thermal resistance

? Internal input and output prematching ensures good

stability and allows an easier design of wideband

circuits.

APPLICATIONS

? Common emitter class-A amplifiers in CW conditions for

military and professional applications in the 1.7 GHz to

2.1 GHz band.