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LX5512E-LQ中文資料美高森美數(shù)據(jù)手冊PDF規(guī)格書
LX5512E-LQ規(guī)格書詳情
DESCRIPTION
The LX5512E is a power amplifier optimized for WLAN applications in the 2.4-2.5 GHz frequency range. The PA is implemented as a three-stage monolithic microwave integrated circuit (MMIC) with active bias and input/output pre-matching. The device is manufactured with an InGaP/GaAs Heterojunction Bipolar Transistor (HBT) IC process (MOCVD). It operates at a single low voltage supply of 3.3V with 34 dB power gain between 2.4-2.5GHz, at a low quiescent current of 50 mA.
KEY FEATURES
? Advanced InGaP HBT
? 2.4 – 2.5GHz Operation
? Single-Polarity 3.3V Supply
? Low Quiescent Current Icq ~50mA
? Power Gain ~34dB @ 2.45GHz and Pout = 19dBm
? Total Current 130mA for Pout = 19dBm @ 2.45GHz OFDM
? EVM ~ 3.0 for 64QAM / 54Mbps and Pout = 19dBm
? Small Footprint (3 x 3 mm2)
? Low Profile (0.9mm)
APPLICATIONS
? IEEE 802.11b/g
產(chǎn)品屬性
- 型號：
LX5512E-LQ
- 制造商：
MICROSEMI
- 制造商全稱：
Microsemi Corporation
- 功能描述：
InGaP HBT 2.4 - 2.5 GHz Power Amplifier
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
MROSEMI/美高森美 |
23+ |
NA/ |
8996 |
優(yōu)勢代理渠道,原裝正品,可全系列訂貨開增值稅票 |
詢價 | ||
MICROSEMI |
06+ |
QFN16 |
2138 |
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價 | ||
NA |
2017+ |
QFN |
28562 |
只做原裝正品假一賠十! |
詢價 | ||
MICORSEMI |
23+ |
QFN |
15000 |
全新原裝現(xiàn)貨,價格優(yōu)勢 |
詢價 | ||
MICROSEMI |
2016+ |
QFN |
2964 |
只做原裝,假一罰十,公司可開17%增值稅發(fā)票! |
詢價 | ||
MICROSEMI |
23+ |
NA |
21815 |
專做原裝正品,假一罰百! |
詢價 | ||
MICROSEMI |
07+ |
原廠原裝 |
21000 |
自己公司全新庫存絕對有貨 |
詢價 | ||
MICROSEMI |
2005 |
QFN16 |
38900 |
原裝現(xiàn)貨海量庫存歡迎咨詢 |
詢價 | ||
Microsemi |
23+ |
QFN |
3200 |
全新原裝、誠信經(jīng)營、公司現(xiàn)貨銷售! |
詢價 | ||
MICROSEMI |
QFN16 |
68900 |
原包原標(biāo)簽100%進(jìn)口原裝常備現(xiàn)貨! |
詢價 |
